Difference between revisions of "Atomic Layer Deposition Recipes"
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m (→Atomic Layer Deposition (Oxford FlexAL): 30nm max. thickness indicated) |
(→Atomic Layer Deposition (Oxford FlexAL): changed to "ask Tool Supervisor" instead of BillM) |
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== Oxford FlexAL Chamber #1: Metals == |
== Oxford FlexAL Chamber #1: Metals == |
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| − | '''Maximum 30nm deposition thickness!''' (ask [[ |
+ | '''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.) |
=== Pt deposition (ALD CHAMBER 1) === |
=== Pt deposition (ALD CHAMBER 1) === |
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== Oxford FlexAL Chamber #3: Dielectrics == |
== Oxford FlexAL Chamber #3: Dielectrics == |
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| − | '''Maximum 30nm deposition thickness!''' (ask [[ |
+ | '''Maximum 30nm deposition thickness!''' (ask [[Brian Lingg|Tool Supervisor]] if needed.) |
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)=== |
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)=== |
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Revision as of 10:13, 23 April 2020
Back to Vacuum Deposition Recipes.
Atomic Layer Deposition (Oxford FlexAL)
Oxford FlexAL Chamber #1: Metals
Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)
Pt deposition (ALD CHAMBER 1)
- Recipe name: Ch1_TMCpPt+O3-300C
- Pt deposition rate ~ 0.5-0.6 A/cyc
- Conductivity data: (to be added)
- recipe utilizes the ozone generator which must be first set to the following conditions:
- O2 flow = 250sccm
- O3 concentration = 15 wt%
- 300°C Deposition
Ru deposition (ALD CHAMBER 1)
- Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
- Ru deposition rate ~ 0.6-0.7A/cyc.
- Conductivity data: (to be added)
- 300°C, O2 gas reaction
ZnO Deposition (ALD Chamber 1)
Conductive film.
- Recipe name: Ch1_DEZ+H2O-200C
- ZnO deposition rate ≈ 1.6 A/cycle
- resistivity ≈ TBA
- 200°C Deposition, Water reaction
ZnO:Al deposition (ALD CHAMBER 1)
Al-Doped ZnO for variable resisitivity.
- Recipe name: Ch1_DEZ/TMA+H2O-200C
- The recipe has TWO loops. The Outer loop determines final thickness. The Inner loop determines how much AlOx is doped into the film. Note that each full (outer-loop) cycle takes a long time due to this double-loop structure.
- Al dose fraction = 5% for lowest resistivity
- ZnO deposition rate ~ 1.7A/cyc
- resistivity ~ 4200uOhm.cm (390A film)
Oxford FlexAL Chamber #3: Dielectrics
Maximum 30nm deposition thickness! (ask Tool Supervisor if needed.)
Al2O3 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TMA+H2O-300C
- Al2O3 deposition rate ~ 1A/cyc
- 300°C Dep., Water reaction
- Recipe Name: CH3_TMA+H2O-XYZ?
- TBD
AlN deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TMA+100W/20N*-300C
- AlN deposition rate ~ t.b.d.
- Recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
- 300°C Dep.
HfO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TEMAH+H2O-300C
- HfO2 deposition rate ~ 0.9-1.0A/cyc
- Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
- 300°C Dep.
SiO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAS+250W/O*-300C
- SiO2 deposition rate ~ 0.7-0.8A/cyc
- Recipe utilizes an O* plasma @ 250W, 5mTorr pressure, 300°C Temp.
ZrO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TEMAZ+H2O-300C
- ZrO2 deposition rate ~ 0.9-1.0A/cyc
- Not directly characterized since results are basically the same as the HfO2 process above.
- 300°C Dep.
TiO2 deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAT+H2O-300C
- TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
- 300°C Dep.
TiN deposition (ALD CHAMBER 3)
- Recipe name: Ch3_TDMAT+N*/H*-300C
- TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added)
- 300°C Dep, uses Plasma of N2 & H2 gases.