Difference between revisions of "Atomic Layer Deposition Recipes"

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(split into Chamber 1 & Chamber 3)
(split up bullets, clarified recipe name, formatting)
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=== Pt deposition (ALD CHAMBER 1) ===
 
=== Pt deposition (ALD CHAMBER 1) ===
*Ch1_TMCpPt+O3-300C
+
*Recipe name: '''''Ch1_TMCpPt+O3-300C'''''
 
*Pt deposition rate ~ 0.5-0.6A/cyc
 
*Pt deposition rate ~ 0.5-0.6A/cyc
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
+
*recipe utilizes the ozone generator which must be first set to the following conditions:
*Conductivity data: (to be added soon)
+
**O<sub>2</sub> flow = 250sccm
 +
**O<sub>3</sub> concentration = 15 wt%
 +
*Conductivity data: (to be added)
  
 
=== Ru deposition (ALD CHAMBER 1) ===
 
=== Ru deposition (ALD CHAMBER 1) ===
* Ch1_Ex03Ru[HPbub]+O2-300C
+
* Recipe name: '''''Ch1_Ex03Ru[HPbub]+O2-300C'''''
 
* Ru deposition rate ~ 0.6-0.7A/cyc.
 
* Ru deposition rate ~ 0.6-0.7A/cyc.
* Conductivity data: (to be added soon)
+
* Conductivity data: (to be added)
  
 
=== ZnO:Al deposition (ALD CHAMBER 1) ===
 
=== ZnO:Al deposition (ALD CHAMBER 1) ===
 
''Al-Doped ZnO for variable resisitivity.''
 
''Al-Doped ZnO for variable resisitivity.''
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity)
+
*Recipe name: '''''Ch1_DEZ/TMA+H2O-200C'''''
 +
*Al dose fraction = 5% for lowest resistivity
 
*ZnO deposition rate ~ 1.7A/cyc
 
*ZnO deposition rate ~ 1.7A/cyc
 
*resistivity ~ 4200uOhm.cm (390A film)
 
*resistivity ~ 4200uOhm.cm (390A film)
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===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===
 
===Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)===
  
*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc
+
*Recipe name: '''''Ch3_TMA+H2O-300C'''''
 +
*Al<sub>2</sub>O<sub>3</sub> deposition rate ~ 1A/cyc
  
 
===AlN deposition (ALD CHAMBER 3)===
 
===AlN deposition (ALD CHAMBER 3)===
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
+
*Recipe name: '''''Ch3_TMA+100W/20N*-300C'''''
 +
*AlN deposition rate ~ t.b.d.
 
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
 
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
  
 
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===HfO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
+
*Recipe name: '''''Ch3_TEMAH+H2O-300C'''''
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
+
*HfO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
 +
*Note: deposition shows significant parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
  
 
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===SiO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
+
*Recipe name: '''''Ch3_TDMAS+250W/O*-300C'''''
 +
*SiO<sub>2</sub> deposition rate ~ 0.7-0.8A/cyc
 
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure
 
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure
  
 
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===ZrO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
+
*Recipe name: '''''Ch3_TEMAZ+H2O-300C'''''
*not directly characterized since results are basically the same as the HfO2 process above.
+
*ZrO<sub>2</sub> deposition rate ~ 0.9-1.0A/cyc
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
+
*not directly characterized since results are basically the same as the HfO<sub>2</sub> process above.
 +
*as for the HfO<sub>2</sub> process, deposition will exhibit significant parasitic growth unless long H<sub>2</sub>O purge/pump cycles are in place.
  
 
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
 
===TiO{{sub|2}} deposition (ALD CHAMBER 3)===
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc
+
*Recipe name: '''''Ch3_TDMAT+H2O-300C'''''
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
+
*TiO{{sub|2}} deposition rate ~ 0.6A/cyc
 +
*Note: deposition shows parasitic growth (via CVD channel) if H<sub>2</sub>O purge/pump times are not sufficient.
  
 
===TiN deposition (ALD CHAMBER 3)===
 
===TiN deposition (ALD CHAMBER 3)===
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
+
*Recipe name: '''''Ch3_TDMAT+N*/H*-300C'''''
 +
*TiN deposition rate ~ 0.7A/cyc
 
*Conductivity data: (to be added soon)
 
*Conductivity data: (to be added soon)

Revision as of 16:39, 17 July 2018

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Oxford FlexAL Chamber #1: Metals

Pt deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_TMCpPt+O3-300C
  • Pt deposition rate ~ 0.5-0.6A/cyc
  • recipe utilizes the ozone generator which must be first set to the following conditions:
    • O2 flow = 250sccm
    • O3 concentration = 15 wt%
  • Conductivity data: (to be added)

Ru deposition (ALD CHAMBER 1)

  • Recipe name: Ch1_Ex03Ru[HPbub]+O2-300C
  • Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added)

ZnO:Al deposition (ALD CHAMBER 1)

Al-Doped ZnO for variable resisitivity.

  • Recipe name: Ch1_DEZ/TMA+H2O-200C
  • Al dose fraction = 5% for lowest resistivity
  • ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

Oxford FlexAL Chamber #3: Dielectrics

Al2O3 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+H2O-300C
  • Al2O3 deposition rate ~ 1A/cyc

AlN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TMA+100W/20N*-300C
  • AlN deposition rate ~ t.b.d.
  • recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAH+H2O-300C
  • HfO2 deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

SiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAS+250W/O*-300C
  • SiO2 deposition rate ~ 0.7-0.8A/cyc
  • recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZrO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TEMAZ+H2O-300C
  • ZrO2 deposition rate ~ 0.9-1.0A/cyc
  • not directly characterized since results are basically the same as the HfO2 process above.
  • as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

TiO2 deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+H2O-300C
  • TiO2 deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

  • Recipe name: Ch3_TDMAT+N*/H*-300C
  • TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added soon)