Difference between revisions of "Atomic Layer Deposition Recipes"
Jump to navigation
Jump to search
Mitchell b (talk | contribs) |
(split into Chamber 1 & Chamber 3) |
||
| Line 1: | Line 1: | ||
{{recipes|Vacuum Deposition}} |
{{recipes|Vacuum Deposition}} |
||
=[[Atomic Layer Deposition (Oxford FlexAL)]]= |
=[[Atomic Layer Deposition (Oxford FlexAL)]]= |
||
| + | |||
| ⚫ | |||
| + | == Oxford FlexAL Chamber #1: Metals == |
||
| + | |||
| ⚫ | |||
| + | *Ch1_TMCpPt+O3-300C |
||
| ⚫ | |||
| ⚫ | |||
| ⚫ | |||
| + | |||
| ⚫ | |||
| ⚫ | |||
| + | * Ru deposition rate ~ 0.6-0.7A/cyc. |
||
| ⚫ | |||
| + | |||
| ⚫ | |||
| + | ''Al-Doped ZnO for variable resisitivity.'' |
||
| ⚫ | |||
| + | *ZnO deposition rate ~ 1.7A/cyc |
||
| ⚫ | |||
| + | |||
| + | == Oxford FlexAL Chamber #3: Dielectrics == |
||
| + | |||
| ⚫ | |||
*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc |
*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc |
||
| − | ==AlN deposition (ALD CHAMBER 3)== |
+ | ===AlN deposition (ALD CHAMBER 3)=== |
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d. |
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d. |
||
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure. |
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure. |
||
| − | ==HfO{{sub|2}} deposition (ALD CHAMBER 3)== |
+ | ===HfO{{sub|2}} deposition (ALD CHAMBER 3)=== |
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc |
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc |
||
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient. |
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient. |
||
| − | == |
+ | ===SiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
| ⚫ | |||
| ⚫ | |||
| ⚫ | |||
| − | |||
| ⚫ | |||
| ⚫ | |||
| ⚫ | |||
| − | |||
| ⚫ | |||
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc |
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc |
||
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure |
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure |
||
| − | == |
+ | ===ZrO{{sub|2}} deposition (ALD CHAMBER 3)=== |
| ⚫ | |||
| ⚫ | |||
| − | |||
| ⚫ | |||
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc |
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc |
||
*not directly characterized since results are basically the same as the HfO2 process above. |
*not directly characterized since results are basically the same as the HfO2 process above. |
||
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place. |
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place. |
||
| − | ==TiO{{sub|2}} deposition (ALD CHAMBER 3)== |
+ | ===TiO{{sub|2}} deposition (ALD CHAMBER 3)=== |
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc |
*Ch3_TDMAT+H2O-300C: TiO{{sub|2}} deposition rate ~ 0.6A/cyc |
||
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient. |
*Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient. |
||
| − | ==TiN deposition (ALD CHAMBER 3)== |
+ | ===TiN deposition (ALD CHAMBER 3)=== |
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc |
*Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc |
||
*Conductivity data: (to be added soon) |
*Conductivity data: (to be added soon) |
||
Revision as of 16:34, 17 July 2018
Back to Vacuum Deposition Recipes.
Atomic Layer Deposition (Oxford FlexAL)
Oxford FlexAL Chamber #1: Metals
Pt deposition (ALD CHAMBER 1)
- Ch1_TMCpPt+O3-300C
- Pt deposition rate ~ 0.5-0.6A/cyc
- recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
- Conductivity data: (to be added soon)
Ru deposition (ALD CHAMBER 1)
- Ch1_Ex03Ru[HPbub]+O2-300C
- Ru deposition rate ~ 0.6-0.7A/cyc.
- Conductivity data: (to be added soon)
ZnO:Al deposition (ALD CHAMBER 1)
Al-Doped ZnO for variable resisitivity.
- Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity)
- ZnO deposition rate ~ 1.7A/cyc
- resistivity ~ 4200uOhm.cm (390A film)
Oxford FlexAL Chamber #3: Dielectrics
Al2O3 deposition (ALD CHAMBER 3)
- Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc
AlN deposition (ALD CHAMBER 3)
- Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
- recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
HfO2 deposition (ALD CHAMBER 3)
- Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
- Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
SiO2 deposition (ALD CHAMBER 3)
- Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
- recipe utilizes an O* plasma @ 250W, 5mTorr pressure
ZrO2 deposition (ALD CHAMBER 3)
- Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
- not directly characterized since results are basically the same as the HfO2 process above.
- as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
TiO2 deposition (ALD CHAMBER 3)
- Ch3_TDMAT+H2O-300C: TiO2 deposition rate ~ 0.6A/cyc
- Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
TiN deposition (ALD CHAMBER 3)
- Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
- Conductivity data: (to be added soon)