Difference between revisions of "Atomic Layer Deposition Recipes"

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==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)==
 
==Al{{sub|2}}O{{sub|3}} deposition (ALD CHAMBER 3)==
  
*{{fl|ALD-Al2O3-300-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300}}
+
*Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc
*{{fl|ALD-Al2O3-300-Saturated-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 300 Saturated}}
 
*{{fl|ALD-Al2O3-Plasma-300C-Recipe.pdf|Al{{sub|2}}O{{sub|3}} plasma 300C}}
 
*{{fl|ALD-Al2O3-100-Recipe.pdf|Al{{sub|2}}O{{sub|3}} 100}}
 
  
 
==AlN deposition (ALD CHAMBER 3)==
 
==AlN deposition (ALD CHAMBER 3)==
*{{fl|ALD-AlN-300-recipe.pdf|AlN 300}}
+
*Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
 +
*recipe utilizes a N* plasma @ 100W, 20mTorr pressure.
  
 
==HfO{{sub|2}} deposition (ALD CHAMBER 3)==
 
==HfO{{sub|2}} deposition (ALD CHAMBER 3)==
*{{fl|ALD-HfO2-100-recipe.pdf|HfO{{sub|2}} 100}}
+
*Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
*{{fl|ALD-HfO2-300-recipe.pdf|HfO{{sub|2}} 300}}
+
*Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.
  
 
==Pt deposition (ALD CHAMBER 1)==
 
==Pt deposition (ALD CHAMBER 1)==
(Platinum)
 
 
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
 
*Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
 
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
 
*recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
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== Ru deposition (ALD CHAMBER 1) ==
 
== Ru deposition (ALD CHAMBER 1) ==
(Ruthenium)
+
* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
* Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.65A/cyc.
 
 
* Conductivity data: (to be added soon)
 
* Conductivity data: (to be added soon)
  
 
==SiO{{sub|2}} deposition (ALD CHAMBER 3)==
 
==SiO{{sub|2}} deposition (ALD CHAMBER 3)==
*{{fl|ALD-SiO2-100-recipe.pdf|SiO{{sub|2}} 100}}
+
*Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
*{{fl|ALD-SiO2-300-recipe.pdf|SiO{{sub|2}} 300}}
+
*recipe utilizes an O* plasma @ 250W, 5mTorr pressure
  
 
==ZnO deposition (ALD CHAMBER 1)==
 
==ZnO deposition (ALD CHAMBER 1)==
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5%): ZnO deposition rate ~ 1.7A/cyc, resistivity ~ 4200uOhm.cm (390A film)
+
*Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
 +
*resistivity ~ 4200uOhm.cm (390A film)
  
 
==ZrO{{sub|2}} deposition (ALD CHAMBER 3)==
 
==ZrO{{sub|2}} deposition (ALD CHAMBER 3)==
*{{fl|ALD-ZrO2-300-recipe.pdf|ZrO{{sub|2}} 300}}
+
*Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
 +
*not directly characterized since results are basically the same as the HfO2 process above.
 +
*as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.
  
 
==TiO{{sub|2}} deposition (ALD CHAMBER 3)==
 
==TiO{{sub|2}} deposition (ALD CHAMBER 3)==

Revision as of 11:48, 14 May 2018

Back to Vacuum Deposition Recipes.

Atomic Layer Deposition (Oxford FlexAL)

Al2O3 deposition (ALD CHAMBER 3)

  • Ch3_TMA+H2O-300C: Al2O3 deposition rate ~ 1A/cyc

AlN deposition (ALD CHAMBER 3)

  • Ch3_TMA+100W/20N*-300C: AlN deposition rate ~ t.b.d.
  • recipe utilizes a N* plasma @ 100W, 20mTorr pressure.

HfO2 deposition (ALD CHAMBER 3)

  • Ch3_TEMAH+H2O-300C: HfO2 deposition rate ~ 0.9-1.0A/cyc
  • Note: deposition shows significant parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

Pt deposition (ALD CHAMBER 1)

  • Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
  • recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
  • Conductivity data: (to be added soon)

Ru deposition (ALD CHAMBER 1)

  • Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.6-0.7A/cyc.
  • Conductivity data: (to be added soon)

SiO2 deposition (ALD CHAMBER 3)

  • Ch3_TDMAS+250W/O*-300C: SiO2 deposition rate ~ 0.7-0.8A/cyc
  • recipe utilizes an O* plasma @ 250W, 5mTorr pressure

ZnO deposition (ALD CHAMBER 1)

  • Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5% for lowest resistivity): ZnO deposition rate ~ 1.7A/cyc
  • resistivity ~ 4200uOhm.cm (390A film)

ZrO2 deposition (ALD CHAMBER 3)

  • Ch3_TEMAZ+H2O-300C: ZrO2 deposition rate ~ 0.9-1.0A/cyc
  • not directly characterized since results are basically the same as the HfO2 process above.
  • as for the HfO2 process, deposition will exhibit significant parasitic growth unless long H2O purge/pump cycles are in place.

TiO2 deposition (ALD CHAMBER 3)

  • Ch3_TDMAT+H2O-300C: TiO2 deposition rate ~ 0.6A/cyc
  • Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

  • Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
  • Conductivity data: (to be added soon)