Difference between revisions of "Atomic Layer Deposition (Oxford FlexAL)"

From UCSB Nanofab Wiki
Jump to: navigation, search
m (ALD recipes heading)
(corrected chamber --> metal/dielectric designation)
 
(10 intermediate revisions by 3 users not shown)
Line 11: Line 11:
 
|toolid=6
 
|toolid=6
 
}}
 
}}
= About =
+
=About=
The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films. The system currently has metallorganic precursors for Aluminum, Hafnium, Titanium, Platinum, Zirconium, and Silicon oxides and nitrides. Water and Ozone are available for thermal oxides and Oxygen, Ammonia, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible. The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface. In-situ ellipsometry between growth cycles and mass spectrometry during growth are both available.
+
The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films.
   
  +
The system currently has metallorganic precursors for Aluminum, Hafnium, Titanium, Platinum, Zirconium, and Silicon oxides and nitrides. Water and Ozone are available for thermal oxides and Oxygen, Ammonia, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.
=Documentation=
 
*[[media:Cluster operating instructions.pdf|Operating Instructions]]
 
   
  +
The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface.
== ALD Recipes ==
 
  +
See the [[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition: Recipes]] page for recipes and thin-film data/measurements.
 
  +
===Cluster Configuration===
  +
We have three separate chambers on the Oxford Cluster tool, two of which are ALD chambers.
  +
  +
One ALD chamber is dedicated to metals and the other is dedicated to dielectrics. The other chamber on the cluster is the [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill]].
  +
  +
*Chamber #1: ALD Metal Films only
  +
*Chamber #2: [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill (CAIBE)]]
  +
*Chamber #3: ALD Dielectrics Films only
  +
  +
=Procedures & Documentation=
  +
  +
*[//wiki.nanotech.ucsb.edu/wiki/images/5/52/Cluster_operating_instructions.pdf Operating Instructions]
  +
**Includes recipe names for various films, and approx. dep. rates
  +
*Film Thicknesses are restricted to '''30nm or less'''.
  +
**'''Thicker films are allowed with prior staff approval''' - please ask [[Brian Lingg|Tool Supervisor]] if you want to deposit a thicker film!
  +
  +
==ALD Recipes==
  +
  +
*The [[Atomic_Layer_Deposition_Recipes|'''Atomic Layer Deposition: Recipes''']] page shows all available recipes and data/measurements.
  +
*Only staff-provided recipes are allowed to be run on this tool, as achieving the atomic-layer regime is rather complex. [[Bill Mitchell]] is the resident expert on ALD recipe development.
   
 
==Etch Rates of ALD Films==
 
==Etch Rates of ALD Films==
  +
*[[media:Wet_Etching_of_ALD_Al2O3_Plasma_300C.xls|Al2O3 Plasma 300C Wet Etch Rates]]
 
  +
*[//wiki.nanotech.ucsb.edu/wiki/images/1/14/Wet_Etching_of_ALD_Al2O3_Plasma_300C.xls Al2O3 Plasma 300C Wet Etch Rates]

Latest revision as of 07:57, 1 July 2020

Atomic Layer Deposition (Oxford FlexAL)
FlexAL.jpg
Tool Type Vacuum Deposition
Location Bay 2
Supervisor Brian Lingg
Supervisor Phone (805) 893-8145
Supervisor E-Mail lingg_b@ucsb.edu
Description Oxford FlexAL Atomic Layer Deposition
Manufacturer Oxford Instruments Plasma Technologies
Vacuum Deposition Recipes
Sign up for this tool


About

The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films.

The system currently has metallorganic precursors for Aluminum, Hafnium, Titanium, Platinum, Zirconium, and Silicon oxides and nitrides. Water and Ozone are available for thermal oxides and Oxygen, Ammonia, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.

The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface.

Cluster Configuration

We have three separate chambers on the Oxford Cluster tool, two of which are ALD chambers.

One ALD chamber is dedicated to metals and the other is dedicated to dielectrics. The other chamber on the cluster is the Oxford Ion Mill.

Procedures & Documentation

  • Operating Instructions
    • Includes recipe names for various films, and approx. dep. rates
  • Film Thicknesses are restricted to 30nm or less.
    • Thicker films are allowed with prior staff approval - please ask Tool Supervisor if you want to deposit a thicker film!

ALD Recipes

  • The Atomic Layer Deposition: Recipes page shows all available recipes and data/measurements.
  • Only staff-provided recipes are allowed to be run on this tool, as achieving the atomic-layer regime is rather complex. Bill Mitchell is the resident expert on ALD recipe development.

Etch Rates of ALD Films