Difference between revisions of "Ashers (Technics PEII)"

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(→‎About: applicaitons section)
(→‎Recipes: link to recipes page, deleted recipes form this page)
 
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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=Ashers.jpg
 
|picture=Ashers.jpg
 
|type = Dry Etch
 
|type = Dry Etch
 
|super= Mike Day
 
|super= Mike Day
 +
|super2= Tony Bosch
 
|location=Bay 5
 
|location=Bay 5
 
|description = Plasma Etching Systems
 
|description = Plasma Etching Systems
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}}  
 
}}  
  
= About =
+
=About=
  
 
These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si<sub>3</sub>N<sub>4</sub> films. The systems are both equipped with O<sub>2</sub> for organic removal / surface activation.   
 
These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si<sub>3</sub>N<sub>4</sub> films. The systems are both equipped with O<sub>2</sub> for organic removal / surface activation.   
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One system also has CF<sub>4</sub>/O<sub>2</sub> 88% / 12% for etching Si<sub>3</sub>N<sub>4</sub>. These systems are operated manually and no sign-up is required.  
 
One system also has CF<sub>4</sub>/O<sub>2</sub> 88% / 12% for etching Si<sub>3</sub>N<sub>4</sub>. These systems are operated manually and no sign-up is required.  
  
=== Applications ===
+
===Mechanism===
This is an RIE etch with O2 - using plasma ion bombardment, in a semi-vertical direction (although the higher 300mT pressure does attack sidewalls somewhat).  
+
This is a low-frequency RIE etch with O2 - using plasma ion bombardment, in a semi-vertical direction (although the higher 300mT pressure does attack sidewalls somewhat). The low kHz frequency allows ion to move with the RF, providing higher ion bombardment 
  
 
Low-temp (energy comes from ion acceleration, not temperature).
 
Low-temp (energy comes from ion acceleration, not temperature).
  
Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable.
+
===Applications===
 +
Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable. Typical times: ~2min and microscope inspect and repeat.
  
 
Stripping full-thickness PR's in the PEii is slow, at something like ~100nm/1min (at standard 100W/300mT).
 
Stripping full-thickness PR's in the PEii is slow, at something like ~100nm/1min (at standard 100W/300mT).
  
Surface activation, eg. making the surface hydrophilic before water-based wet-etching (15sec). This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines. Or to increase adhesion of the next deposition (~1min) - etch is a bit more aggressive and will go through any monolayers (organic or otherwise).
+
Surface activation, eg. making the surface hydrophilic before water-based wet-etching (15sec), or dehydration of wafer surface before HMDS application. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines.  
  
= Detailed Specifications =
+
Increase adhesion of the next deposition (~2-4min), for example right before loading into evaporator for lift-off. Etch is a bit more aggressive and will go through any monolayers (organic or otherwise), and possibly slightly roughen the surface  
  
*Gases used: CF<sub>4</sub> / O<sub>2</sub> (88%/12%) and O<sub>2</sub>  
+
=Detailed Specifications=
*~ 10mT ultimate chamber pressure  
+
 
*100 kHz directly coupled excitation source  
+
*Gases used: CF<sub>4</sub> / O<sub>2</sub> (88%/12%) and O<sub>2</sub>
*Sample size: pieces to 6” wafers  
+
*~ 10mT ultimate chamber pressure
*Gas flow and power control  
+
*100 kHz (low frequency) directly coupled excitation source
*Typical process conditions:
+
*Sample size: pieces to 6” wafers
**Ashing: O2 300mT, 100W power, 30 sec.
+
*Gas flow and power control
**Si3N4 Etching: CF<sub>4</sub>/O<sub>2</sub> 300mT, 100W, ~ 100–150 nm / min. etch rate
+
 
 +
==Recipes==
 +
 
 +
*'''Oxygen Plasma recipes > [[Oxygen Plasma System Recipes#Ashers .28Technics PEII.29|<u>Ashers (Technics PEii)</u>]]'''

Latest revision as of 12:06, 11 November 2022

Ashers (Technics PEII)
Ashers.jpg
Location Bay 5
Tool Type Dry Etch
Manufacturer Technics
Model PE II-A
Description Plasma Etching Systems

Primary Supervisor Mike Day
(805) 893-3101
day@ece.ucsb.edu

Secondary Supervisor

Tony Bosch


Recipes Dry Etch RecipesN/A


About

These two parallel plate plasma etching systems are generally used to clean organic residue off of semiconductor wafers (ashing), etch organic films, or etch Si3N4 films. The systems are both equipped with O2 for organic removal / surface activation.

One system also has CF4/O2 88% / 12% for etching Si3N4. These systems are operated manually and no sign-up is required.

Mechanism

This is a low-frequency RIE etch with O2 - using plasma ion bombardment, in a semi-vertical direction (although the higher 300mT pressure does attack sidewalls somewhat). The low kHz frequency allows ion to move with the RF, providing higher ion bombardment

Low-temp (energy comes from ion acceleration, not temperature).

Applications

Use this for situation where the material to be removed is resistant to chemicals (fluorocarbon polymers - think "plastic") and/or relatively hard (chlorinated PR, after a CL2/BCl2 etch), so physical bombardment is necessary to break up the material, or if high-temp is not acceptable. Typical times: ~2min and microscope inspect and repeat.

Stripping full-thickness PR's in the PEii is slow, at something like ~100nm/1min (at standard 100W/300mT).

Surface activation, eg. making the surface hydrophilic before water-based wet-etching (15sec), or dehydration of wafer surface before HMDS application. This is very important for wet-etch processing through small, high aspect ratio photoresist holes or lines.

Increase adhesion of the next deposition (~2-4min), for example right before loading into evaporator for lift-off. Etch is a bit more aggressive and will go through any monolayers (organic or otherwise), and possibly slightly roughen the surface

Detailed Specifications

  • Gases used: CF4 / O2 (88%/12%) and O2
  • ~ 10mT ultimate chamber pressure
  • 100 kHz (low frequency) directly coupled excitation source
  • Sample size: pieces to 6” wafers
  • Gas flow and power control

Recipes