Difference between revisions of "ASML Stepper 3 Dicing Guide Programming"

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(Added negative PR image)
(Update: state doesn’t work and workaround.)
 
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<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>
 
<blockquote>''How to program the ASML DUV Stepper #3 to place dicing guides in between die.''</blockquote>
 +
UPDATE: doesn’t work: Ning tried this and found these patterns were too difficult to see on the disconfirm saw. Demis: new method, use ASML’s Alignment Mark distribution function to use SPM-X/Y marks as dicing guides. Carefully not to distribute too many - there is a software limit on number of exposures per Image.
 
* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing.  There are both positive and negative versions of the Cross pattern.
 
* Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing.  There are both positive and negative versions of the Cross pattern.
 
* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:
 
* When programming the job, add an new Image in <code>Wafer Layout > Image Definition</code> for the DicingGuides image, as so:

Latest revision as of 11:07, 30 January 2021

How to program the ASML DUV Stepper #3 to place dicing guides in between die.

UPDATE: doesn’t work: Ning tried this and found these patterns were too difficult to see on the disconfirm saw. Demis: new method, use ASML’s Alignment Mark distribution function to use SPM-X/Y marks as dicing guides. Carefully not to distribute too many - there is a software limit on number of exposures per Image. 
  • Determine a lithography step in the fabrication process during which the addition of dicing guides (crosses) would be acceptable and visible during dicing. There are both positive and negative versions of the Cross pattern.
  • When programming the job, add an new Image in Wafer Layout > Image Definition for the DicingGuides image, as so:
    • Reticle ID: "UCSB-OPC1" (hyphenated)
    • For Positive PR image:
      • Image Size (Wafer): X = 0.90000; Y = 0.90000 mm
      • Image Shift (Wafer): X = -6.750000; Y= -9.450000 mm
      • ASML Programming: Image Definition Screen
        ASML Programming (Positive PR) Image Definition Screen
        Image Definition: Resulting location on Reticle screenshot
        Image Definition (Positive PR): Location on Reticle
        Positive PR Alignment Mark schematic
        Positive PR Alignment Mark. Will center the large Cross.
    • For Negative PR Image:
      • Image Size (wafer scale): X = 0.710000 ; Y = 0.710000 mm
      • Image Shift (wafer scale): X = 6.750000 ; Y = -9.450000 mm
        Negative PR pattern schematic
        Negative PR pattern
      • More info on either pattern can be found here.
  • Under Wafer Layout > Image Distribution, add an Image-to-Cell Shift of half the die X/Y size, and Apply to all die, to place the marks at the corner of every die.
    • The software will only let you place the die at the upper-right (+X,+Y) corner. To include the lower-left corners, you will need to make sure you enabled the Wafer Layout > Cell Structure > Die Definition > # of Dies & Minimum per Cell options too shoot partial die at the wafer edges.
    • Make sure they don't expose over any of your other alignment marks!
  • Screenshot fo resulting die location
    Image Distribution: Example dicing mark locations, using Image-to-Cell Shift to place die at corners.