Difference between revisions of "ASML DUV: Edge Bead Removal via Photolithography"

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(credits and date)
 
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It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.
  
It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.
   
−
(This process can easily be transferred to I-Line photoresists, using the [[Contact Aligner (SUSS MA-6)|Suss MA-6]] for flood exposure.)
 +
(This process can easily be transferred to I-Line photoresists, using the [[Contact Aligner (SUSS MA-6)|Suss MA-6]] for flood exposure instead of DUV Flood expose.)
  +
  ⚫
===Photo-EBR Process===
  +
  ⚫
*Spun/cure a DUV photoresist using your standard photolith. params (for example [[Stepper Recipes#Positive Resist .28ASML DUV.29|UV6]]).
  ⚫
*Place the wafer on the [[DUV Flood Expose|'''DUV Flood Exposer''']] with the metal mask in place.  
  ⚫
*Turn on rotation on slow (so mask doesn't move), lamp warmup is not required.
  ⚫
*Expose for 13 sec, with slow rotation.
  ⚫
*''Optionally:'' PEB 135°C, 60sec, Develop, dry (in SRD), then proceed.  This did not affect my primary lithography when I did this step separately.  I've also done photo-EBR where I combined this EBR exposure with the primary Imaging litho. and only did a single develop.
  ⚫
*Load wafer into ASML & Expose your process
  ⚫
*PEB 135°C, 90sec
  ⚫
*300MiF develop as per your normal process.
  ⚫
**(If you did not develop the EBR yet, it should go away in this step.)
   
⚫
=== Photo-EBR Process ===
  
⚫
* Spun/cure a DUV photoresist using your standard photolith. params (for example [[Stepper Recipes#Positive Resist .28ASML DUV.29|UV6]]).
  
⚫
* Place the wafer on the [[DUV Flood Expose|DUV Flood Exposer]] with the metal mask in place.  
  
⚫
* Turn on rotation on slow (so mask doesn't move), lamp warmup is not required.
  
⚫
* Expose for 13 sec, with slow rotation.
  
⚫
* ''Optionally:'' PEB 135°C, 60sec, Develop, dry (in SRD), then proceed.  This did not affect my primary lithography when I did this step separately.  I've also done photo-EBR where I combined this develop with the primary litho.
  
⚫
* Load wafer into ASML & Expose your process
  
⚫
* PEB 135°C, 90sec
  
⚫
* 300MiF develop as per your normal process.
  
⚫
** (If you did not develop the EBR yet, it should go away in this step.
  
 
Demis D. John, 2018-10-22
  
Demis D. John, 2018-10-22

Latest revision as of 23:06, 4 October 2022

The metal edge-bead removal masks are in the Suss MA-6 Contact Aligner drawers, and I recommend the "4mm recessed".

It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.

(This process can easily be transferred to I-Line photoresists, using the Suss MA-6 for flood exposure instead of DUV Flood expose.)

Photo-EBR Process

  • Spun/cure a DUV photoresist using your standard photolith. params (for example UV6).
  • Place the wafer on the DUV Flood Exposer with the metal mask in place.  
  • Turn on rotation on slow (so mask doesn't move), lamp warmup is not required.
  • Expose for 13 sec, with slow rotation.
  • Optionally: PEB 135°C, 60sec, Develop, dry (in SRD), then proceed.  This did not affect my primary lithography when I did this step separately.  I've also done photo-EBR where I combined this EBR exposure with the primary Imaging litho. and only did a single develop.
  • Load wafer into ASML & Expose your process
  • PEB 135°C, 90sec
  • 300MiF develop as per your normal process.
    • (If you did not develop the EBR yet, it should go away in this step.)
Demis D. John, 2018-10-22
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