Difference between revisions of "ASML DUV: Edge Bead Removal via Photolithography"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(pasted traveler)
 
(credits and date)
 
(One intermediate revision by the same user not shown)
Line 1: Line 1:
The metal edge-bead removal masks are in the Suss MA-6 Contact Aligner drawers, and I recommend the "4mm recessed"  
+
The metal edge-bead removal masks are in the Suss MA-6 Contact Aligner drawers, and I recommend the "4mm recessed".
  
 
It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.
 
It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.
 +
 +
(This process can easily be transferred to I-Line photoresists, using the [[Contact Aligner (SUSS MA-6)|Suss MA-6]] for flood exposure.)
  
 
=== Photo-EBR Process ===
 
=== Photo-EBR Process ===
Line 13: Line 15:
 
* 300MiF develop as per your normal process.
 
* 300MiF develop as per your normal process.
 
** (If you did not develop the EBR yet, it should go away in this step.
 
** (If you did not develop the EBR yet, it should go away in this step.
 +
Demis D. John, 2018-10-22

Latest revision as of 05:21, 27 January 2021

The metal edge-bead removal masks are in the Suss MA-6 Contact Aligner drawers, and I recommend the "4mm recessed".

It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.

(This process can easily be transferred to I-Line photoresists, using the Suss MA-6 for flood exposure.)

Photo-EBR Process

  • Spun/cure a DUV photoresist using your standard photolith. params (for example UV6).
  • Place the wafer on the DUV Flood Exposer with the metal mask in place.  
  • Turn on rotation on slow (so mask doesn't move), lamp warmup is not required.
  • Expose for 13 sec, with slow rotation.
  • Optionally: PEB 135°C, 60sec, Develop, dry (in SRD), then proceed.  This did not affect my primary lithography when I did this step separately.  I've also done photo-EBR where I combined this develop with the primary litho.
  • Load wafer into ASML & Expose your process
  • PEB 135°C, 90sec
  • 300MiF develop as per your normal process.
    • (If you did not develop the EBR yet, it should go away in this step.
Demis D. John, 2018-10-22