View source for ASML DUV: Edge Bead Removal via Photolithography

The metal edge-bead removal masks are in the Suss MA-6 Contact Aligner drawers, and I recommend the "4mm recessed" 

It loses a bit more device area, but significantly lowers the risk of breaking a wafer in clamped systems such as the DSEiii.

=== Photo-EBR Process ===
* Spun/cure a DUV photoresist using your standard photolith. params (for example [[Stepper Recipes#Positive Resist .28ASML DUV.29|UV6]]).
* Place the wafer on the [[DUV Flood Expose|DUV Flood Exposer]] with the metal mask in place.  
* Turn on rotation on slow (so mask doesn't move), lamp warmup is not required.
* Expose for 13 sec, with slow rotation.
* ''Optionally:'' PEB 135°C, 60sec, Develop, dry (in SRD), then proceed.  This did not affect my primary lithography when I did this step separately.  I've also done photo-EBR where I combined this develop with the primary litho.
* Load wafer into ASML & Expose your process
* PEB 135°C, 90sec
* 300MiF develop as per your normal process.
** (If you did not develop the EBR yet, it should go away in this step.