https://wiki.nanofab.ucsb.edu/w/api.php?action=feedcontributions&user=Zwarburg&feedformat=atomUCSB Nanofab Wiki - User contributions [en]2024-03-28T08:37:53ZUser contributionsMediaWiki 1.35.13https://wiki.nanofab.ucsb.edu/w/index.php?title=Template:News&diff=2764Template:News2013-05-23T16:56:56Z<p>Zwarburg: </p>
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<div>* The [[ASML DUV]] is up and running for 4" wafers! Contact [[Adam Abrahamsen]] for more information. ''(5/22/2013)''<br />
* A New Primaxx Vapor HF etchin gsystem is up. contact [[Mike Silva]] for details. ''(5/22/2013)''<br />
<!--DO NOT EDIT BELOW THIS LINE--><br />
<noinclude>[[Category:Templates]]</noinclude></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=UCSB_Nanofab_Wiki:Administrators&diff=2760UCSB Nanofab Wiki:Administrators2013-05-18T04:28:03Z<p>Zwarburg: Blanked the page</p>
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<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=UCSB_Nanofab_Wiki:Administrators&diff=2759UCSB Nanofab Wiki:Administrators2013-05-18T04:27:57Z<p>Zwarburg: Created page with "a"</p>
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<div>a</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=2758Contact Alignment Recipes2013-05-16T15:34:07Z<p>Zwarburg: </p>
<hr />
<div>{{recipes|Lithography}} <br />
<br />
= Notes =<br />
<br />
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
<br />
= [[Suss Aligners (SUSS MJB-3)]] =<br />
<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="100" | Bake <br />
! width="100" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| AZ4110 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.1 um <br />
| 8” <br />
| AZ400K:DI 1:4 <br />
| 50" <br />
| align="left" | <br />
|-<br />
| AZ4210 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 2.1 um <br />
| 13” <br />
| AZ400K:DI 1:4 <br />
| 70” <br />
| align="left" | <br />
|-<br />
| AZ4330 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 3.3 um <br />
| 18” <br />
| AZ400K:DI 1:4 <br />
| 90” <br />
| align="left" | <br />
|-<br />
| SPR220-3.0 <br />
| 3.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.5 um <br />
| 25” <br />
| AZ300MIF <br />
| 50” <br />
| align="left" | <br />
*Post Bake 115°C /60” <br />
*Better Cl2 etch resistance than 4330 <br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.5 um <br />
| 60” <br />
| AZ300MIF <br />
| 70” <br />
| align="left" | <br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="100" | Bake <br />
! width="100" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | PEB <br />
! width="100" | Flood <br />
! width="125" | Developer <br />
! width="125" | Developer Time <br />
! width="350" | Comments<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1 um <br />
| 5” <br />
| 110°C/60” <br />
| 60” <br />
| AZ400K:DI 1:5.5 <br>or<br>AZ300MIF <br />
| 60"<br><br>45" <br />
| align="left" | <br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1 um <br />
| 10” <br />
| 110°C/60” <br />
| 60” <br />
| AZ300MIF <br />
| 45” <br />
| align="left" | <br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
<br />
|-<br />
| AZnLOF2020 <br />
| 3 krpm/30” <br />
| 110°C/90” <br />
| ~ 2.1 um <br />
| 10” <br />
| 110°C/60” <br />
| <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*Use i-line filter <br />
*For Undercut <br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
<br />
|}<br />
<br />
= [[Contact Aligner (SUSS MA-6)]] =<br />
<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="100" | Bake <br />
! width="100" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| AZ4110 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.1 um <br />
| 3.3” <br />
| AZ400K:DI 1:4 <br />
| 50" <br />
| align="left" | <br />
|-<br />
| AZ4210 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 2.1 um <br />
| 5.4” <br />
| AZ400K:DI 1:4 <br />
| 70” <br />
| align="left" | <br />
|-<br />
| AZ4330 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 3.3 um <br />
| 7.5” <br />
| AZ400K:DI 1:4 <br />
| 90” <br />
| align="left" | <br />
|-<br />
| SPR220-3.0 <br />
| 3.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.5 um <br />
| 10.4” <br />
| AZ300MIF <br />
| 50” <br />
| align="left" | <br />
*Post Bake 115°C /60” <br />
*Better Cl2 etch resistance than 4330<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.5 um <br />
| 25” <br />
| AZ300MIF <br />
| 70” <br />
| align="left" | <br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="100" | Bake <br />
! width="100" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | PEB <br />
! width="100" | Flood <br />
! width="125" | Developer <br />
! width="125" | Developer Time <br />
! width="350" | Comments<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1 um <br />
| 2.1” <br />
| 110°C/60” <br />
| 60” <br />
| AZ400K:DI 1:5.5 <br>or<br>AZ300MIF <br />
| 60"<br><br>45" <br />
| align="left" | <br />
*Concentrated 400K Dev. Etches 5214<br />
<br />
|-<br />
| AZnLOF2020 <br />
| 3 krpm/30” <br />
| 110°C/90” <br />
| ~ 2.1 um <br />
| 4.2” <br />
| 110°C/60” <br />
| <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*For Undercut<br />
<br />
|-<br />
| AZnLOF2035 <br />
| 2.5 krpm/30” <br />
| 110°C/60” <br />
| ~ 3.5 um <br />
| 5.0” <br />
| 110°C/60” <br />
| <br />
| AZ300MIF <br />
| 70”<br />
| align="left" | <br />
*For Undercut<br />
<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2757Stepper Recipes2013-05-16T15:33:07Z<p>Zwarburg: /* Stepper 3 (ASML DUV) */</p>
<hr />
<div>{{recipes|Lithography}} <br />
<br />
Below is a listing of stepper lithography recipes. Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities. &nbsp;Stepper 3 is a DUV (248nm) system. &nbsp;DUV resists do not work for i-line and i-line resists do not work for DUV. &nbsp;Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems. &nbsp;See the underlayer datasheets for details. &nbsp; Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers. <br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do a focus and/or exposure array to get optimal process parameters.&nbsp; <br />
<br />
= [[Stepper 1 (GCA 6300)]] =<br />
<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
<br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| SPR955CM0.9 <br />
| 3 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.9 um <br />
| 1.2” <br />
| 0 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR955CM0.9 <br />
| 3 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.9 um <br />
| 3.0” <br />
| 4 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*Much longer exposure time for dense isolated holes <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR955CM0.9<br> <br />
CEM365iS <br />
<br />
| 3 krpm/30”<br> <br />
5 krpm/30” <br />
<br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 2.2” <br />
| -10 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.35um isolated spaces by SEM measurement. <br />
*Higher exposure time due to CEM <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR950-0.8 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.8 um <br />
| 1.0” <br />
| 0 <br />
| 105°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
|-<br />
| SPR955CM-1.8 <br />
| 4 krpm/30” <br />
| 90°C/90” <br />
| ~ 1.8 um <br />
| 2.3” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
<br />
|-<br />
| SPR220-3.0 <br />
| 2.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.7 um <br />
| 2.4” <br />
| 10 <br />
| 115°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.0 um <br />
| 4.5” <br />
| 0 <br />
| *50°C/60”<br> <br />
115°C/90” <br />
<br />
| AZ300MIF <br />
| 120" <br />
| align="left" | <br />
*1.0 um isolated lines; 1.25 um isolated spaces <br />
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C <br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
<br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.0 um <br />
| 0.2” <br />
| 0 <br />
| 110°C/60” <br />
| 60" <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.7 um res. possible&nbsp;<br />
<br />
|-<br />
| nLOF5510 <br />
| 3 krpm/30” <br />
| 90°C/60” <br />
| ~ 0.93 um <br />
| 0.74” <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um line openings good dense or isolated <br />
*Use heated 1165 stripper for removal or lift-off <br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
<br />
|-<br />
| nLOF2020 <br />
| 4 krpm/30” <br />
| 110°C/60” <br />
| ~ 2 um <br />
| 0.55” <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 90" <br />
| align="left" | <br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller. <br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp. <br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
<br />
|}<br />
<br />
= [[Stepper 2 (AutoStep 200)]] =<br />
<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| SPR955CM-0.9 <br />
| 3 krpm/30” <br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 0.35” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.5um dense lines <br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
<br />
|-<br />
| SPR955CM-0.9 <br />
| 3 krpm/30” <br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 0.8” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.5um holes<br />
<br />
|-<br />
| SPR955CM-1.8 <br />
| 4 krpm/30” <br />
| 95°C/90” <br />
| ~ 1.8 um <br />
| 0.4” <br />
| -1 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
<br />
|-<br />
| SPR950-0.8 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.8 um <br />
| '''0.30”''' <br />
| 0 <br />
| 105°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
|-<br />
| SPR220-3.0 <br />
| 2.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.7 um <br />
| '''0.72”''' <br />
| 10 <br />
| 115°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.0 um <br />
| '''1.35"''' <br />
| 0 <br />
| *50°C/60”<br> <br />
115°C/90” <br />
<br />
| AZ300MIF <br />
| 120" <br />
| align="left" | <br />
*1.0 um isolated lines; 1.25 um isolated spaces <br />
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| nLOF5510 <br />
| 3 krpm/30” <br />
| 90°C/60” <br />
| ~ 0.93 um <br />
| .25” <br />
| -1 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.4 um lines dense good <br />
*Use heated 1165 stripper for removal or lift-off <br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.0 um <br />
| '''0.06”''' <br />
| 0 <br />
| 110°C/60” <br />
| 60" <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.7 um res. possible<br />
<br />
|-<br />
| nLOF2020 <br />
| 4 krpm/30” <br />
| 110°C/60” <br />
| ~ 2 um <br />
| '''0.17”''' <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 90" <br />
| align="left" | <br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller. <br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
<br />
|}<br />
<br />
= [[Stepper 3 (ASML DUV)]] =<br />
<br />
==Positive Resist (ASML DUV)== <br />
Anti-reflective coatings are, in general, used for the ASML stepper<span style="line-height: 1.5em;">. LOL2000 and PMGI</span><span style="line-height: 1.5em;">&nbsp;can also be used. &nbsp;For AR2 coatings, spin coat at 3500rpm for a 670A thick coating. &nbsp;Bake at 220C for 60s on a hotplate. &nbsp;This AR coating is removed via oxygen plasma. &nbsp;RIE 5 parameters are 20sccm, 10mT, 100W for 40s. &nbsp;For DS-K101, spin at 5000rpm and bake at 185C for 60s. &nbsp;This AR coating develops away and undercuts in AZ300MIF. &nbsp;For isolated lines, this can cause them to lift-off. &nbsp;If undercut rate is too high, increase bake temperature. &nbsp;</span> <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Dose(mj) <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| UV6-0.7 <br />
| 3.5 krpm/30” <br />
| 135°C/60” <br />
| 630nm <br />
| 17 <br />
| -0.2 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 45” <br />
| align="left" | <br />
*200nm dense line/space <br />
*NA 0.57, Sigma 0.75 <br />
*Eo ~ 5.5mj<br />
<br />
|-<br />
| UV210-0.3 <br />
| 5.0 krpm/30” <br />
| 135°C/60” <br />
| 230nm <br />
| 20 <br />
| -0.1 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 45" <br />
| align="left" | <br />
*150nm dense line/space<br> <br />
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5<br />
<br />
|-<br />
| UV210-0.3 <br />
| 3.0 krpm/30” <br />
| 135°C/90” <br />
| 260nm <br />
| 85 <br />
| -0.2 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 80” <br />
| align="left" | <br />
*170nm isolated holes <br />
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5<br />
<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)==<br />
<span style="line-height: 1.5em;">Anti-reflective coatings are, in general, used for the ASML stepper. LOL2000 and PMGI can also be used. For AR2 coatings, spin coat at 3500rpm for a 670A thick coating. Bake at 220C for 60s on a hotplate. This AR coating is removed via oxygen plasma. RIE 5 parameters are 20sccm, 10mT, 100W for 40s. For DS-K101, spin at 5000rpm and bake at 185C for 60s. This AR coating develops away and undercuts in AZ300MIF. For isolated lines, this can cause them to lift-off. If undercut rate is too high, increase bake temperature.</span> <br />
<br />
<br> <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Dose (mj) <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| UVN2300-0.5 <br />
| 2.5 krpm/30” <br />
| 110°C/60” <br />
| 550nm <br />
| 23 <br />
| +0.2 <br />
| 105°C/60” <br />
| Not Used <br />
| AZ300MIF <br />
| 40” <br />
| align="left" | <br />
*200nm isolated line <br />
*NA 0.57, Sigma 0.5<br />
<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2756Stepper Recipes2013-05-16T15:32:46Z<p>Zwarburg: /* Stepper 2 (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}} <br />
<br />
Below is a listing of stepper lithography recipes. Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities. &nbsp;Stepper 3 is a DUV (248nm) system. &nbsp;DUV resists do not work for i-line and i-line resists do not work for DUV. &nbsp;Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems. &nbsp;See the underlayer datasheets for details. &nbsp; Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers. <br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do a focus and/or exposure array to get optimal process parameters.&nbsp; <br />
<br />
= [[Stepper 1 (GCA 6300)]] =<br />
<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
<br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| SPR955CM0.9 <br />
| 3 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.9 um <br />
| 1.2” <br />
| 0 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR955CM0.9 <br />
| 3 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.9 um <br />
| 3.0” <br />
| 4 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*Much longer exposure time for dense isolated holes <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR955CM0.9<br> <br />
CEM365iS <br />
<br />
| 3 krpm/30”<br> <br />
5 krpm/30” <br />
<br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 2.2” <br />
| -10 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.35um isolated spaces by SEM measurement. <br />
*Higher exposure time due to CEM <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR950-0.8 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.8 um <br />
| 1.0” <br />
| 0 <br />
| 105°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
|-<br />
| SPR955CM-1.8 <br />
| 4 krpm/30” <br />
| 90°C/90” <br />
| ~ 1.8 um <br />
| 2.3” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
<br />
|-<br />
| SPR220-3.0 <br />
| 2.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.7 um <br />
| 2.4” <br />
| 10 <br />
| 115°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.0 um <br />
| 4.5” <br />
| 0 <br />
| *50°C/60”<br> <br />
115°C/90” <br />
<br />
| AZ300MIF <br />
| 120" <br />
| align="left" | <br />
*1.0 um isolated lines; 1.25 um isolated spaces <br />
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C <br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
<br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.0 um <br />
| 0.2” <br />
| 0 <br />
| 110°C/60” <br />
| 60" <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.7 um res. possible&nbsp;<br />
<br />
|-<br />
| nLOF5510 <br />
| 3 krpm/30” <br />
| 90°C/60” <br />
| ~ 0.93 um <br />
| 0.74” <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um line openings good dense or isolated <br />
*Use heated 1165 stripper for removal or lift-off <br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
<br />
|-<br />
| nLOF2020 <br />
| 4 krpm/30” <br />
| 110°C/60” <br />
| ~ 2 um <br />
| 0.55” <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 90" <br />
| align="left" | <br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller. <br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp. <br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
<br />
|}<br />
<br />
= [[Stepper 2 (AutoStep 200)]] =<br />
<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| SPR955CM-0.9 <br />
| 3 krpm/30” <br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 0.35” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.5um dense lines <br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
<br />
|-<br />
| SPR955CM-0.9 <br />
| 3 krpm/30” <br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 0.8” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.5um holes<br />
<br />
|-<br />
| SPR955CM-1.8 <br />
| 4 krpm/30” <br />
| 95°C/90” <br />
| ~ 1.8 um <br />
| 0.4” <br />
| -1 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
<br />
|-<br />
| SPR950-0.8 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.8 um <br />
| '''0.30”''' <br />
| 0 <br />
| 105°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
|-<br />
| SPR220-3.0 <br />
| 2.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.7 um <br />
| '''0.72”''' <br />
| 10 <br />
| 115°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.0 um <br />
| '''1.35"''' <br />
| 0 <br />
| *50°C/60”<br> <br />
115°C/90” <br />
<br />
| AZ300MIF <br />
| 120" <br />
| align="left" | <br />
*1.0 um isolated lines; 1.25 um isolated spaces <br />
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| nLOF5510 <br />
| 3 krpm/30” <br />
| 90°C/60” <br />
| ~ 0.93 um <br />
| .25” <br />
| -1 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.4 um lines dense good <br />
*Use heated 1165 stripper for removal or lift-off <br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.0 um <br />
| '''0.06”''' <br />
| 0 <br />
| 110°C/60” <br />
| 60" <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.7 um res. possible<br />
<br />
|-<br />
| nLOF2020 <br />
| 4 krpm/30” <br />
| 110°C/60” <br />
| ~ 2 um <br />
| '''0.17”''' <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 90" <br />
| align="left" | <br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller. <br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
<br />
|}<br />
<br />
= [[Stepper 3 (ASML DUV)]] =<br />
<br />
==Positive Resist (ASML DUV)== Anti-reflective coatings are, in general, used for the ASML stepper<span style="line-height: 1.5em;">. LOL2000 and PMGI</span><span style="line-height: 1.5em;">&nbsp;can also be used. &nbsp;For AR2 coatings, spin coat at 3500rpm for a 670A thick coating. &nbsp;Bake at 220C for 60s on a hotplate. &nbsp;This AR coating is removed via oxygen plasma. &nbsp;RIE 5 parameters are 20sccm, 10mT, 100W for 40s. &nbsp;For DS-K101, spin at 5000rpm and bake at 185C for 60s. &nbsp;This AR coating develops away and undercuts in AZ300MIF. &nbsp;For isolated lines, this can cause them to lift-off. &nbsp;If undercut rate is too high, increase bake temperature. &nbsp;</span> <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Dose(mj) <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| UV6-0.7 <br />
| 3.5 krpm/30” <br />
| 135°C/60” <br />
| 630nm <br />
| 17 <br />
| -0.2 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 45” <br />
| align="left" | <br />
*200nm dense line/space <br />
*NA 0.57, Sigma 0.75 <br />
*Eo ~ 5.5mj<br />
<br />
|-<br />
| UV210-0.3 <br />
| 5.0 krpm/30” <br />
| 135°C/60” <br />
| 230nm <br />
| 20 <br />
| -0.1 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 45" <br />
| align="left" | <br />
*150nm dense line/space<br> <br />
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5<br />
<br />
|-<br />
| UV210-0.3 <br />
| 3.0 krpm/30” <br />
| 135°C/90” <br />
| 260nm <br />
| 85 <br />
| -0.2 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 80” <br />
| align="left" | <br />
*170nm isolated holes <br />
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5<br />
<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)==&nbsp;<span style="line-height: 1.5em;">Anti-reflective coatings are, in general, used for the ASML stepper. LOL2000 and PMGI can also be used. For AR2 coatings, spin coat at 3500rpm for a 670A thick coating. Bake at 220C for 60s on a hotplate. This AR coating is removed via oxygen plasma. RIE 5 parameters are 20sccm, 10mT, 100W for 40s. For DS-K101, spin at 5000rpm and bake at 185C for 60s. This AR coating develops away and undercuts in AZ300MIF. For isolated lines, this can cause them to lift-off. If undercut rate is too high, increase bake temperature.</span> <br />
<br />
<br> <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Dose (mj) <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| UVN2300-0.5 <br />
| 2.5 krpm/30” <br />
| 110°C/60” <br />
| 550nm <br />
| 23 <br />
| +0.2 <br />
| 105°C/60” <br />
| Not Used <br />
| AZ300MIF <br />
| 40” <br />
| align="left" | <br />
*200nm isolated line <br />
*NA 0.57, Sigma 0.5<br />
<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2755Stepper Recipes2013-05-16T15:32:27Z<p>Zwarburg: /* Stepper 1 (GCA 6300) */</p>
<hr />
<div>{{recipes|Lithography}} <br />
<br />
Below is a listing of stepper lithography recipes. Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities. &nbsp;Stepper 3 is a DUV (248nm) system. &nbsp;DUV resists do not work for i-line and i-line resists do not work for DUV. &nbsp;Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems. &nbsp;See the underlayer datasheets for details. &nbsp; Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers. <br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do a focus and/or exposure array to get optimal process parameters.&nbsp; <br />
<br />
= [[Stepper 1 (GCA 6300)]] =<br />
<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
<br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| SPR955CM0.9 <br />
| 3 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.9 um <br />
| 1.2” <br />
| 0 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR955CM0.9 <br />
| 3 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.9 um <br />
| 3.0” <br />
| 4 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*Much longer exposure time for dense isolated holes <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR955CM0.9<br> <br />
CEM365iS <br />
<br />
| 3 krpm/30”<br> <br />
5 krpm/30” <br />
<br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 2.2” <br />
| -10 <br />
| 110°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.35um isolated spaces by SEM measurement. <br />
*Higher exposure time due to CEM <br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
<br />
|-<br />
| SPR950-0.8 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.8 um <br />
| 1.0” <br />
| 0 <br />
| 105°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
|-<br />
| SPR955CM-1.8 <br />
| 4 krpm/30” <br />
| 90°C/90” <br />
| ~ 1.8 um <br />
| 2.3” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
<br />
|-<br />
| SPR220-3.0 <br />
| 2.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.7 um <br />
| 2.4” <br />
| 10 <br />
| 115°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines <br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.0 um <br />
| 4.5” <br />
| 0 <br />
| *50°C/60”<br> <br />
115°C/90” <br />
<br />
| AZ300MIF <br />
| 120" <br />
| align="left" | <br />
*1.0 um isolated lines; 1.25 um isolated spaces <br />
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C <br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> <br />
<br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.0 um <br />
| 0.2” <br />
| 0 <br />
| 110°C/60” <br />
| 60" <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.7 um res. possible&nbsp;<br />
<br />
|-<br />
| nLOF5510 <br />
| 3 krpm/30” <br />
| 90°C/60” <br />
| ~ 0.93 um <br />
| 0.74” <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um line openings good dense or isolated <br />
*Use heated 1165 stripper for removal or lift-off <br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
<br />
|-<br />
| nLOF2020 <br />
| 4 krpm/30” <br />
| 110°C/60” <br />
| ~ 2 um <br />
| 0.55” <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 90" <br />
| align="left" | <br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller. <br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp. <br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
<br />
|}<br />
<br />
= [[Stepper 2 (AutoStep 200)]] =<br />
<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| SPR955CM-0.9 <br />
| 3 krpm/30” <br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 0.35” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.5um dense lines <br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
<br />
|-<br />
| SPR955CM-0.9 <br />
| 3 krpm/30” <br />
| 95°C/90” <br />
| ~ 0.9 um <br />
| 0.8” <br />
| 0 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.5um holes<br />
<br />
|-<br />
| SPR955CM-1.8 <br />
| 4 krpm/30” <br />
| 95°C/90” <br />
| ~ 1.8 um <br />
| 0.4” <br />
| -1 <br />
| 110°C/90” <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
<br />
|-<br />
| SPR950-0.8 <br />
| 4 krpm/30” <br />
| 95°C/60” <br />
| ~ 0.8 um <br />
| '''0.30”''' <br />
| 0 <br />
| 105°C/60” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
|-<br />
| SPR220-3.0 <br />
| 2.5 krpm/30” <br />
| 115°C/90” <br />
| ~ 2.7 um <br />
| '''0.72”''' <br />
| 10 <br />
| 115°C/90” <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.5 um isolated lines<br />
<br />
|-<br />
| SPR220-7.0 <br />
| 3.5 krpm/45” <br />
| 115°C/120” <br />
| ~ 7.0 um <br />
| '''1.35"''' <br />
| 0 <br />
| *50°C/60”<br> <br />
115°C/90” <br />
<br />
| AZ300MIF <br />
| 120" <br />
| align="left" | <br />
*1.0 um isolated lines; 1.25 um isolated spaces <br />
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system. <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Time <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| nLOF5510 <br />
| 3 krpm/30” <br />
| 90°C/60” <br />
| ~ 0.93 um <br />
| .25” <br />
| -1 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 60” <br />
| align="left" | <br />
*0.4 um lines dense good <br />
*Use heated 1165 stripper for removal or lift-off <br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
<br />
|-<br />
| AZ5214 <br />
| 6 krpm/30” <br />
| 95°C/60” <br />
| ~ 1.0 um <br />
| '''0.06”''' <br />
| 0 <br />
| 110°C/60” <br />
| 60" <br />
| AZ300MIF <br />
| 60" <br />
| align="left" | <br />
*0.7 um res. possible<br />
<br />
|-<br />
| nLOF2020 <br />
| 4 krpm/30” <br />
| 110°C/60” <br />
| ~ 2 um <br />
| '''0.17”''' <br />
| -6 <br />
| 110°C/60” <br />
| 0 <br />
| AZ300MIF <br />
| 90" <br />
| align="left" | <br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller. <br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
<br />
|}<br />
<br />
= [[Stepper 3 (ASML DUV)]] =<br />
<br />
==Positive Resist (ASML DUV)== Anti-reflective coatings are, in general, used for the ASML stepper<span style="line-height: 1.5em;">. LOL2000 and PMGI</span><span style="line-height: 1.5em;">&nbsp;can also be used. &nbsp;For AR2 coatings, spin coat at 3500rpm for a 670A thick coating. &nbsp;Bake at 220C for 60s on a hotplate. &nbsp;This AR coating is removed via oxygen plasma. &nbsp;RIE 5 parameters are 20sccm, 10mT, 100W for 40s. &nbsp;For DS-K101, spin at 5000rpm and bake at 185C for 60s. &nbsp;This AR coating develops away and undercuts in AZ300MIF. &nbsp;For isolated lines, this can cause them to lift-off. &nbsp;If undercut rate is too high, increase bake temperature. &nbsp;</span> <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Dose(mj) <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| UV6-0.7 <br />
| 3.5 krpm/30” <br />
| 135°C/60” <br />
| 630nm <br />
| 17 <br />
| -0.2 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 45” <br />
| align="left" | <br />
*200nm dense line/space <br />
*NA 0.57, Sigma 0.75 <br />
*Eo ~ 5.5mj<br />
<br />
|-<br />
| UV210-0.3 <br />
| 5.0 krpm/30” <br />
| 135°C/60” <br />
| 230nm <br />
| 20 <br />
| -0.1 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 45" <br />
| align="left" | <br />
*150nm dense line/space<br> <br />
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5<br />
<br />
|-<br />
| UV210-0.3 <br />
| 3.0 krpm/30” <br />
| 135°C/90” <br />
| 260nm <br />
| 85 <br />
| -0.2 <br />
| 135°C/90” <br />
| AZ300MIF <br />
| 80” <br />
| align="left" | <br />
*170nm isolated holes <br />
*NA 0.63, Sigma_o 0.8, Sigma_i 0.5<br />
<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)==&nbsp;<span style="line-height: 1.5em;">Anti-reflective coatings are, in general, used for the ASML stepper. LOL2000 and PMGI can also be used. For AR2 coatings, spin coat at 3500rpm for a 670A thick coating. Bake at 220C for 60s on a hotplate. This AR coating is removed via oxygen plasma. RIE 5 parameters are 20sccm, 10mT, 100W for 40s. For DS-K101, spin at 5000rpm and bake at 185C for 60s. This AR coating develops away and undercuts in AZ300MIF. For isolated lines, this can cause them to lift-off. If undercut rate is too high, increase bake temperature.</span> <br />
<br />
<br> <br />
<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! width="100" | Resist <br />
! width="100" | Spin Cond. <br />
! width="75" | Bake <br />
! width="75" | Thickness <br />
! width="125" | Exposure Dose (mj) <br />
! width="100" | Focus Offset <br />
! width="75" | PEB <br />
! width="75" | Flood <br />
! width="100" | Developer <br />
! width="125" | Developer Time <br />
! width="300" | Comments<br />
|-<br />
| UVN2300-0.5 <br />
| 2.5 krpm/30” <br />
| 110°C/60” <br />
| 550nm <br />
| 23 <br />
| +0.2 <br />
| 105°C/60” <br />
| Not Used <br />
| AZ300MIF <br />
| 40” <br />
| align="left" | <br />
*200nm isolated line <br />
*NA 0.57, Sigma 0.5<br />
<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Chemical_List_-_OLD_2018-09-05&diff=2754Chemical List - OLD 2018-09-052013-05-16T15:24:45Z<p>Zwarburg: /* UNSORTED */</p>
<hr />
<div>Below is a list of all chemicals authorized for use in the lab. Please note that only the chemicals that appear in '''bold''' are stocked by the lab. All other chemicals have been authorized for users to bring. <br />
=Acids=<br />
{|<br />
|-valign="top"<br />
|width=300|<br />
*'''[[media:Acetic Acid MSDS.pdf|Acetic Acid MSDS]]'''<br />
*'''[[media:Al Etchant, Type A MSDS.pdf|Al Etchant, Type A MSDS]]'''<br />
*'''[[media:Al Etchant, Type D MSDS.pdf|Al Etchant, Type D MSDS]]'''<br />
*[[media:BoricAcidMSDS.pdf|Boric Acid MSDS]]<br />
*'''[[media:Buffered HF.pdf|Buffered HF MSDS]]<br />
*'''[[media:Chromic Acid.pdf|Chromic Acid MSDS]]'''<br />
*'''[[media:ChromiumMaskEtchantMSDS.pdf|Chromium Mask Etchant MSDS]]<br />
*'''[[media:CitricAcidMSDS.pdf|Citric Acid (granular) MSDS]]<br />
*[[media:FormicAcidMSDS.pdf|Formic Acid 88% MSDS]]<br />
*'''[[media:HydrobromicAcidMSDS.pdf|Hydrobromic Acid MSDS]]<br />
*'''[[media:HydrochloricAcidMSDS.pdf|Hydrochloric Acid MSDS]]'''<br />
*'''[[media:HydrofluoricAcidMSDS.pdf|Hydrofluoric Acid 49% MSDS]]<br />
*[[media:HydroiodicAcidMSDS.pdf|Hydroiodic Acid 47% MSDS]]<br />
*[[media:LacticAcidFractionalMSDS.pdf|Lactic Acid 0.1 Normal Volumetric MSDS]]<br />
|width=300|<br />
*[[media:LacticAcidMSDS.pdf|Lactic Acid MSDS]]<br />
*[[media:MethacrylicAcidMSDS.pdf|Methacrylic Acid MSDS]]<br />
*'''[[media:NickelEtchantTFBMSDS.pdf|Nickel Etchant, Type TFB MSDS]]<br />
*'''[[media:NitricAcidMSDS.pdf|Nitric Acid MSDS]]<br />
*[[media:OxalicAcidDihydrateMSDS.pdf|Oxalic Acid Dihydrate MSDS]]<br />
*'''[[media:PhosphoricAcidMSDS.pdf|Phosphoric Acid MSDS]]<br />
*[[media:SelenousAcidMSDS.pdf|Selenous Acid MSDS]]<br />
*[[media:SuccinicAcid99%MSDS.pdf|Succinic Acid 99% MSDS]]<br />
*[[media:SulfamicAcidMSDS.pdf|Sulfamic Acid MSDS]]<br />
*[[media:SulfuricAcid93%MSDS.pdf|Sulfuric Acid 93% MSDS]]<br />
*[[media:SulfuricAcidFuming.pdf|Sulfuric Acid Fuming MSDS]]<br />
*'''[[media:SulfuricAcidMSDS.pdf|Sulfuric Acid MSDS]]<br />
*[[media:TartaricAcidMSDS.pdf|Tartaric Acid MSDS]]<br />
*'''[[media:TiEtchantMSDS.pdf|Ti Etchant, Type TFTN MSDS]]<br />
|-<br />
|}<br />
<br />
=Bases=<br />
{|<br />
|-valign="top"<br />
|width=300|<br />
*'''[[media:AmmoniumHydroxideMSDS.pdf|Ammonium Hydroxide MSDS]]<br />
*'''[[media:AmmoniumSulfideMSDS.pdf|Ammonium Sulfide MSDS]]<br />
*'''[[media:PotassiumHydroxideMSDS.pdf|Potassium Hydroxide MSDS]]<br />
*'''[[media:SodiumHydroxideMSDS.pdf|Sodium Hydroxide MSDS]]<br />
|width=300|<br />
*'''[[media:SodiumSulfideMSDS.pdf|Sodium Sulfide MSDS]]<br />
*'''[[media:THAH25MSDS1.pdf|TMAH 25% MSDS #1]]<br />
*'''[[media:THAH25MSDS2.pdf|TMAH 25% MSDS #2]]<br />
|-<br />
|}<br />
<br />
=Lithography Chemicals=<br />
{| class="wikitable" style="font-size: 95%;" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%"<br />
|-bgcolor=#D0E7FF<br />
!align=center bgcolor=#D0E7FF width="250"|'''Chemical'''<br />
!align=center bgcolor=#D0E7FF width="250"|'''MSDS'''<br />
!align=center bgcolor=#D0E7FF width="150"|'''Datasheet'''<br />
|-<br />
|'''1165 Stripper||[[media:1165 Stripper MSDS.pdf|1165 Stripper MSDS]]||[[media:1165 Stripper Datasheet.pdf|1165 Stripper Datasheet]]<br />
|-<br />
|'''Accuglass T-12B||[[media:AccuglassT-12B-MSDS.pdf|Accuglass T-12B MSDS]] ||<br />
|-<br />
|'''AP 3000 Adhesion Promoter||[[media:AP-3000-Adhesion-MSDS.pdf|AP 3000 Adhesion Promoter]] ||<br />
|-<br />
|AZ 300 MIF Developer|| ||<br />
|-<br />
|AZ 300T Stripper|| ||<br />
|-<br />
|AZ 400K Developer|| ||<br />
|-<br />
|AZ726 MIF Developer|| ||<br />
|-<br />
|AZ EBR Edge Bead Remover|| ||<br />
|-<br />
|AZ LOL 2000 Photoresist|| ||<br />
|-<br />
|AZ nLOF 2020 Photoresist|| ||<br />
|-<br />
|AZ nLOF 5510 Photoresist|| ||<br />
|-<br />
|AZ P4110 Photoresist|| ||<br />
|-<br />
|AZ P4210 Photoresist|| ||<br />
|-<br />
|AZ P4330 RS Photoresist|| ||<br />
|-<br />
|AZ P5214 EIR Photoresist|| ||<br />
|-<br />
|CEM 365 IS|| ||<br />
|-<br />
|Cyclotene 4024-40 BCB|| ||<br />
|-<br />
|DS 2100 VCS Developer|| ||<br />
|-<br />
|HMDS|| ||<br />
|-<br />
|ma-N 2403 Photoresist|| ||<br />
|-<br />
|mr-l-7000 Imprint Polymer|| ||[[media:mr-l-7000-Imprint-Polymer.pdf|mr-l-7000 Datasheet]]<br />
|-<br />
|MCC-101 Developer|| ||<br />
|-<br />
|Nano MMA Photoresist|| ||<br />
|-<br />
|NR7-1500PY Photoresist|| ||<br />
|-<br />
|NXR-1010 Imprint Resist|| ||<br />
|-<br />
|NXR-1020 Imprint Resist|| ||[[media:NXR-1020-Datasheet.pdf|NXR-1020 Datasheet]]<br />
|-<br />
|OCG 825 Photoresist|| ||<br />
|-<br />
|PMGI SF-series Photoresist|| ||<br />
|-<br />
|PRX-127 Stripper|| ||<br />
|-<br />
|RD6 Developer|| ||<br />
|-<br />
|S1805 Photoresist|| ||<br />
|-<br />
|SPR 220 Photoresist|| ||<br />
|-<br />
|SPR 510A Photoresist|| ||<br />
|-<br />
|SPR 518A Photoresist|| ||<br />
|-<br />
|SPR 950-0.8 Photoresist|| ||<br />
|-<br />
|SPR 955 CM|| ||<br />
|-<br />
|SVC-14 Stripper|| ||<br />
|-<br />
|Thinner P|| ||<br />
|-<br />
|}<br />
<br />
=Solvents=<br />
{|<br />
|-valign="top"<br />
|width=300|<br />
*'''[[media:AcetoneMSDS.pdf|Acetone MSDS]]<br />
*'''[[media:AmylAcetateMSDS.pdf|Amyl Acetate MSDS]]<br />
*'''[[media:EthylAlcoholMSDS.pdf|Ethyl Alcohol (Ethanol) MSDS]]<br />
*'''[[media:EthyleneGlycolMSDS.pdf|Ethylene Glycol MSDS]]<br />
*'''[[media:MethylAlcoholMSDS.pdf|Methyl Alcohol (Methanol) MSDS]]<br />
|width=300|<br />
*'''[[media:MethylEthylKetoneMSDS.pdf|Methyl Ethyl Ketone MSDS]]<br />
*'''[[media:MethylIsobutylKetoneMSDS.pdf|Methyl Isobutyl Ketone (MIBK) MSDS]]<br />
*'''[[media:PropanolMSDS.pdf|Propanol MSDS]]<br />
*'''[[media:TolueneMSDS.pdf|Toluene MSDS]]<br />
*'''[[media:XylenesMSDS.pdf|Xylenes MSDS]]<br />
|-<br />
|}<br />
<br />
=Other Chemicals=<br />
{|<br />
|-valign="top"<br />
|width=300|<br />
*'''[[media:AmmoniumSulfideMSDS.pdf|Ammonium Sulfide MSDS]]<br />
*'''[[media:Crystalbond509MSDS.pdf|Crystalbond 509 MSDS]]<br />
*'''[[media:GenSolve500MSDS.pdf|GenSolve 500 MSDS]]<br />
*'''[[media:GenTak230MSDS.pdf|GenTak 230 MSDS]]<br />
*'''[[media:GoldEtchantTypeTFAMSDS.pdf|Gold Etchant, Type TFA MSDS]]<br />
*'''[[media:HydrogenPeroxideMSDS.pdf|Hydrogen Peroxide MSDS]]<br />
|width=300|<br />
*'''[[media:NickelEtchantTFBMSDS.pdf|Nickel Etchant Type TFB MSDS]]<br />
*'''[[media:PC3-1500SpinOnGlassMSDS.pdf|PC3-1500 Spin-On-Glass MSDS]]<br />
*'''[[media:SaturatedBromineWaterMSDS.pdf|Saturated Bromine Water MSDS]]<br />
*'''[[media:SilverEtchantTypeTFS.pdf|Silver Etchant Type TFS MSDS]]<br />
*'''[[media:Technic25ESGoldPlatingSolution.pdf|Technic 25 ES Gold Plating Solution MSDS]]<br />
|-<br />
|}<br />
<br />
<br />
==UNSORTED==<br />
{|<br />
|-valign="top"<br />
|width=300|<br />
*[[media:DN-201GP-Photoresist-MSDS.pdf|DN-201 GP Photoresist MSDS]]<br />
*[[media:(4-Methylthiophenyl)methyl phenyl sulfonium triflate MSDS.pdf|(4-Methylthiophenyl)methyl phenyl sulfonium triflate MSDS]]<br />
*[[media:(4-Phenylthiophenyl)diphenylsulfonium triflate MSDS.pdf|(4-Phenylthiophenyl)diphenylsulfonium triflate MSDS]]<br />
*[[media:2-Bromo-3-hexylthiophene MSDS.pdf|2-Bromo-3-hexylthiophene MSDS]]<br />
*[[media:2-Hydroxy-2-Methylpropiophenone MSDS.pdf|2-Hydroxy-2-Methylpropiophenone MSDS]]<br />
*[[media:3-Aminopropyl)triethoxysilane MSDS.pdf|3-Aminopropyl)triethoxysilane MSDS]]<br />
*[[media:18-Crown-6 MSDS.pdf|18-Crown-6 MSDS]]<br />
*[[media:1165 Stripper MSDS.pdf|1165 Stripper MSDS]]<br />
*[[media:Accuglass 103 Solvent MSDS.pdf|Accuglass 103 Solvent MSDS]]<br />
*[[media:Accuglass T-12B MSDS.pdf|Accuglass T-12B MSDS]]<br />
*[[media:ACCUGLASS T-12B Spin-On-Glass MSDS.pdf|ACCUGLASS T-12B Spin-On-Glass MSDS]]<br />
*[[media:ACEM 365iS MSDS.pdf|ACEM 365iS MSDS]]<br />
*[[media:Additive S-1 MSDS.pdf|Additive S-1 MSDS]]<br />
*[[media:Adhesion Promoter AP3000 MSDS.pdf|Adhesion Promoter AP3000 MSDS]]<br />
*[[media:Adhesion Promoter VM-651 MSDS.pdf|Adhesion Promoter VM-651 MSDS]]<br />
*[[media:Alkyl Quaternary Ammonium Bentonite MSDS.pdf|Alkyl Quaternary Ammonium Bentonite MSDS]]<br />
*[[media:Alpha Alpha Alpha Trifluorotoluene MSDS.pdf|Alpha Alpha Alpha Trifluorotoluene MSDS]]<br />
*[[media:Aluminum Fluoride MSDS.pdf|Aluminum Fluoride MSDS]]<br />
*[[media:Aluminum Oxide MSDS.pdf|Aluminum Oxide MSDS]]<br />
*[[media:Ammonia MSDS.pdf|Ammonia MSDS]]<br />
*[[media:Ammonium Chloride MSDS.pdf|Ammonium Chloride MSDS]]<br />
*[[media:Ammonium Tartrate MSDS.pdf|Ammonium Tartrate MSDS]]<br />
*[[media:Antimony Powder MSDS.pdf|Antimony Powder MSDS]]<br />
*[[media:AP 3000 Adhesion Promoter MSDS.pdf|AP 3000 Adhesion Promoter MSDS]]<br />
*[[media:AquaBond 55 MSDS.pdf|AquaBond 55 MSDS]]<br />
*[[media:AquaBond 65 MSDS.pdf|AquaBond 65 MSDS]]<br />
*[[media:AquaBond 85 MSDS.pdf|AquaBond 85 MSDS]]<br />
*[[media:AquaClean 900 MSDS.pdf|AquaClean 900 MSDS]]<br />
*[[media:ARC i-CON-7 Anti Reflective MSDS.pdf|ARC i-CON-7 Anti Reflective MSDS]]<br />
*[[media:ARC i-CON-16 MSDS.pdf|ARC i-CON-16 MSDS]]<br />
*[[media:Arcosolv PM Solvent MSDS.pdf|Arcosolv PM Solvent MSDS]]<br />
*[[media:Argon MSDS.pdf|Argon MSDS]]<br />
*[[media:Axarel 2200 Defluxed Degreaser MSDS.pdf|Axarel 2200 Defluxed Degreaser MSDS]]{|<br />
*[[media:AZ 300 MIF Developer MSDS.pdf|AZ 300 MIF Developer MSDS]]<br />
*[[media:AZ 300T Stripper MSDS.pdf|AZ 300T Stripper MSDS]]<br />
*[[media:AZ 400K Developer MSDS.pdf|AZ 400K Developer MSDS]]<br />
*[[media:AZ 726 MIF Developer MSDS.pdf|AZ 726 MIF Developer MSDS]]<br />
*[[media:AZ 726 MIF Developer MSDS2.pdf|AZ 726 MIF Developer (2) MSDS]]<br />
*[[media:AZ 1518 Photoresist MSDS.pdf|AZ 1518 Photoresist MSDS]]<br />
*[[media:AZ Aquatar VIII-A 45 MSDS.pdf|AZ Aquatar VIII-A 45 MSDS]]<br />
*[[media:AZ Aquatar VIII-A 45 MSDS(2).pdf|AZ Aquatar VIII-A 45 MSDS (2)]]<br />
*[[media:AZ Developer MSDS.pdf|AZ Developer MSDS]]<br />
*[[media:AZ EBR Edge Bead Remover MSDS.pdf|AZ EBR Edge Bead Remover MSDS]]<br />
*[[media:AZ LExp.KDB087F 42 MSDS.pdf|AZ LExp.KDB087F 42 MSDS]]<br />
*[[media:AZ LOL 2000 Photoresist MSDS.pdf|AZ LOL 2000 Photoresist MSDS]]<br />
*[[media:AZ nLOF 2020 Photoresist MSDS.pdf|AZ nLOF 2020 Photoresist MSDS]]<br />
*[[media:AZ nLOF 2070 Photoresist MSDS.pdf|AZ nLOF 2070 Photoresist MSDS]]<br />
*[[media:AZ nLOF 5510 Photoresist MSDS.pdf|AZ nLOF 5510 Photoresist MSDS]]<br />
*[[media:AZ P4110 Photoresist MSDS.pdf|AZ P4110 Photoresist MSDS]]<br />
*[[media:AZ P4210 Photoresist MSDS.pdf|AZ P4210 Photoresist MSDS]]<br />
*[[media:AZ P4330 RS Photoresist MSDS.pdf|AZ P4330 RS Photoresist MSDS]]<br />
*[[media:AZ P4620 Photoresist MSDS.pdf|AZ P4620 Photoresist MSDS]]<br />
*[[media:AZ P5214 EIR Photoresist MSDS.pdf|AZ P5214 EIR Photoresist MSDS]]<br />
*[[media:AZ R200 Coating MSDS.pdf|AZ R200 Coating MSDS]]<br />
*[[media:AZ SH-114A MSDS.pdf|AZ SH-114A MSDS]]<br />
*[[media:Benzoyl Peroxide MSDS.pdf|Benzoyl Peroxide MSDS]]<br />
*[[media:Bipyridyl Dichlororuthenium II Hexahydrate MDSD.pdf|Bipyridyl Dichlororuthenium II Hexahydrate MDSD]]<br />
*[[media:BIS Cyclopentadienyl Iron (Ferrocene) MSDS.pdf|BIS Cyclopentadienyl Iron (Ferrocene) MSDS]]<br />
*[[media:BIS Cyclopentadienyl Magnesium MSDS.pdf|BIS Cyclopentadienyl Magnesium MSDS]]<br />
*[[media:Bismuth.pdf|Bismuth]]<br />
*[[media:Brewer Science WaferBOND HT-10 MSDS.pdf|Brewer Science WaferBOND HT-10 MSDS]]<br />
*[[media:Brewer Science WaferBOND Remover MSDS.pdf|Brewer Science WaferBOND Remover MSDS]]<br />
*[[media:Bromine MSDS.pdf|Bromine MSDS]]<br />
*[[media:Buffered Oxide Etch JT Baker MSDS.pdf|Buffered Oxide Etch JT Baker MSDS]]<br />
*[[media:CAaD Poymers MSDS.pdf|CAaD Poymers MSDS]]<br />
*[[media:Calcium Fluoride MSDS.pdf|Calcium Fluoride MSDS]]<br />
*[[media:Carbon Black MSDS.pdf|Carbon Black MSDS]]<br />
*[[media:Carbon Tetrachloride MSDS.pdf|Carbon Tetrachloride MSDS]]<br />
*[[media:CEM 365 IS MSDS.pdf|CEM 365 IS MSDS]]<br />
*[[media:Cesium Fluoride MSDS.pdf|Cesium Fluoride MSDS]]<br />
*[[media:Cesium Hydroxide Monohydrate MSDS.pdf|Cesium Hydroxide Monohydrate MSDS]]<br />
*[[media:CF19-2186 Part A MSDS.PDF|CF19-2186 Part A MSDS]]<br />
*[[media:CF19-2186 Part B MSDS.PDF|CF19-2186 Part B MSDS]]<br />
*[[media:Chlorine MSDS.pdf|Chlorine MSDS]]<br />
*[[media:Chloroform MSDS.pdf|Chloroform MSDS]]<br />
*[[media:Chromium Etchant 1020AC MSDS.pdf|Chromium Etchant 1020AC MSDS]]<br />
*[[media:CLEVIOS P MSDS.pdf|CLEVIOS P MSDS]]<br />
*[[media:Clorobenzene MSDS.pdf|Clorobenzene MSDS]]<br />
*[[media:Collodion MSDS.pdf|Collodion MSDS]]<br />
*[[media:Copolmyer MMA(8.5)MAA(EL9) MSDS.pdf|Copolmyer MMA(8.5)MAA(EL9) MSDS]]<br />
*[[media:Copper (II) Sulfate Pentahydrate MSDS.pdf|Copper (II) Sulfate Pentahydrate MSDS]]<br />
*[[media:Cyclohexane MSDS.pdf|Cyclohexane MSDS]]<br />
*[[media:Cyclopentanone MSDS.pdf|Cyclopentanone MSDS]]<br />
*[[media:Cyclotene 3022 MSDS.pdf|Cyclotene 3022 MSDS]]<br />
*[[media:Cyclotene 4000 Resin MSDS.pdf|Cyclotene 4000 Resin MSDS]]<br />
*[[media:Cyclotene 4022 MSDS.pdf|Cyclotene 4022 MSDS]]<br />
*[[media:Cyclotene 4024-40 BCB MSDS.pdf|Cyclotene 4024-40 BCB MSDS]]<br />
*[[media:Cyclotene 4026 Resin MSDS.pdf|Cyclotene 4026 Resin MSDS]]<br />
|width=300|<br />
*[[media:DE-6018 Polymide Developer MSDS.pdf|DE-6018 Polymide Developer MSDS]]<br />
*[[media:DE9040 Developer MSDS.pdf|DE9040 Developer MSDS]]<br />
*[[media:Developer DS3000 MSDS.pdf|Developer DS3000 MSDS]]<br />
*[[media:Dibenzo-18-crown-6 MSDS.pdf|Dibenzo-18-crown-6 MSDS]]<br />
*[[media:Diethoxyethane MSDS.pdf|Diethoxyethane MSDS]]<br />
*[[media:Diethylzinc MSDS.pdf|Diethylzinc MSDS]]<br />
*[[media:Dimethyldydrazine MSDS.pdf|Dimethyldydrazine MSDS]]<br />
*[[media:Dimethylsila-17-Crown-6 MSDS.pdf|Dimethylsila-17-Crown-6 MSDS]]<br />
*[[media:Dimethylsulfoxide MSDS.pdf|Dimethylsulfoxide MSDS]]<br />
*[[media:Disilane MSDS.pdf|Disilane MSDS]]<br />
*[[media:Dodecanethiol MSDS.pdf|Dodecanethiol MSDS]]<br />
*[[media:Dow Corning WL-5150 MSDS.pdf|Dow Corning WL-5150 MSDS]]<br />
*[[media:DS 2100 BCB Developer MSDS.pdf|DS 2100 BCB Developer MSDS]]<br />
*[[media:Dynasolve 165 MSDS.pdf|Dynasolve 165 MSDS]]<br />
*[[media:Dynasolve 185 MSDS.pdf|Dynasolve 185 MSDS]]<br />
*[[media:EC11 Solvent MSDS.pdf|EC11 Solvent MSDS]]<br />
*[[media:ECF-63 Gold Plating Solution MSDS.pdf|ECF-63 Gold Plating Solution MSDS]]<br />
*[[media:EKC 1020 Photoresist MSDS.pdf|EKC 1020 Photoresist MSDS]]<br />
*[[media:EKC 265 Stripper MSDS.pdf|EKC 265 Stripper MSDS]]<br />
*[[media:Epo Tek H20E, Part A & B.pdf|Epo Tek H20E]]<br />
*[[media:Er(TMOD)3 MSDS.pdf|Er(TMOD)3 MSDS]]<br />
*[[media:Ethylenediamine MSDS.pdf|Ethylenediamine MSDS]]<br />
*[[media:FC-4430 MSDS.pdf|FC-4430 MSDS]]<br />
*[[media:FC-4432 MSDS.pdf|FC-4432 MSDS]]<br />
*[[media:FOX-16 Flowable Oxide MSDS.pdf|FOX-16 Flowable Oxide MSDS]]<br />
*[[media:FTO 100-FBA5 Etchant MSDS.pdf|FTO 100-FBA5 Etchant MSDS]]<br />
*[[media:Fe-Pt Bimetallic Nanoparticles in Hexane MSDS.pdf|Fe-Pt Bimetallic Nanoparticles in Hexane MSDS]]<br />
*[[media:Ferric Chloride Hexahydrate MSDS.pdf|Ferric Chloride Hexahydrate MSDS]]<br />
*[[media:Ferric Nitrate Nonahydrate MSDS.pdf|Ferric Nitrate Nonahydrate MSDS]]<br />
*[[media:Ferrous Sulfate MSDS.pdf|Ferrous Sulfate MSDS]]<br />
*[[media:Filmtronics 700B Spin On Glass MSDS.pdf|Filmtronics 700B Spin On Glass MSDS]]<br />
*[[media:Fomblin Y-LVAC 25-6 MSDS.pdf|Fomblin Y-LVAC 25/6 MSDS]]<br />
*[[media:Freon 13B1 Refrigerant MSDS.pdf|Freon 13B1 Refrigerant MSDS]]<br />
*[[media:Gadolinium Oxide MSDS.pdf|Gadolinium Oxide MSDS]]<br />
*[[media:Gallium Arsenide MSDS.pdf|Gallium Arsenide MSDS]]<br />
*[[media:Germanium MSDS.pdf|Germanium MSDS]]<br />
*[[media:Glycerol MSDS.pdf|Glycerol MSDS]]<br />
*[[media:Gold Chloride Hydrate MSDS.pdf|Gold Chloride Hydrate MSDS]]<br />
*[[media:Gold_Etchant_GE-8148-GE-8110_MSDS.pdf|Gold Etchant GE-8148/GE-8110 MSDS]]<br />
*[[media:HD-8820 MSDS.pdf|HD-8820 MSDS]]<br />
*[[media:HD-8820 Polyimide MSDS.pdf|HD-8820 Polyimide MSDS]]<br />
*[[media:HMDS MSDS.pdf|HMDS MSDS]]<br />
*[[media:Hafnium MSDS.pdf|Hafnium MSDS]]<br />
*[[media:Hafnium Oxide MSDS.pdf|Hafnium Oxide MSDS]]<br />
*[[media:Hexadecane MSDS.pdf|Hexadecane MSDS]]<br />
*[[media:Hexamethyldisilazane MSDS.pdf|Hexamethyldisilazane MSDS]]<br />
*[[media:Hexanediol Diacrylate MSDS.pdf|Hexanediol Diacrylate MSDS]]<br />
*[[media:Hydrogen Iodide MSDS.pdf|Hydrogen Iodide MSDS]]<br />
*[[media:Hydrogen MSDS.pdf|Hydrogen MSDS]]<br />
*[[media:IC1-200 Spin On Glass MSDS.pdf|IC1-200 Spin On Glass MSDS]]<br />
*[[media:Imidazole MSDS.pdf|Imidazole MSDS]]<br />
*[[media:Indium MSDS.pdf|Indium MSDS]]<br />
*[[media:Indium Phosphide MSDS.pdf|Indium Phosphide MSDS]]<br />
*[[media:Iodine MSDS.pdf|Iodine MSDS]]<br />
*[[media:Iodine-Bromide Solution MSDS.pdf|Iodine-Bromide Solution MSDS]]<br />
*[[media:Iridium (IV) Chloride MSDS.pdf|Iridium (IV) Chloride MSDS]]<br />
*[[media:Isopropyl Alcohol MSDS.pdf|Isopropyl Alcohol MSDS]]<br />
*[[media:JSR NFC FZX F112 Photoresist Overcoat MSDS.pdf|JSR NFC FZX F112 Photoresist Overcoat MSDS]]<br />
*[[media:JSR NSD 2533Y Photoresist MSDS.pdf|JSR NSD 2533Y Photoresist MSDS]]<br />
*[[media:LDD 26W Developer MSDS.pdf|LDD 26W Developer MSDS]]<br />
*[[media:LOL 2000 Lift Off Layer MSDS.pdf|LOL 2000 Lift Off Layer MSDS]]<br />
*[[media:LOR A Photoresist MSDS.pdf|LOR A Photoresist MSDS]]<br />
*[[media:LOR B Photoresist MSDS.pdf|LOR B Photoresist MSDS]]<br />
*[[media:Lanthanum Fluoride MSDS.pdf|Lanthanum Fluoride MSDS]]<br />
*[[media:Lead Metal MSDS.pdf|Lead Metal MSDS]]<br />
*[[media:MF 24A Developer MSDS.pdf|MF 24A Developer MSDS]]<br />
*[[media:MF-701 Developer MSDS.pdf|MF-701 Developer MSDS]]<br />
*[[media:MICRAL 9400 MSDS.pdf|MICRAL 9400 MSDS]]<br />
*[[media:MMA(8.5)MAA Copolymer Series Resists MSDS.pdf|MMA(8.5)MAA Copolymer Series Resists MSDS]]<br />
*[[media:MR-i 7000 series MSDS.pdf|MR-i 7000 series MSDS]]<br />
*[[media:Magnesium Fluoride MSDS.pdf|Magnesium Fluoride MSDS]]<br />
*[[media:Manganese Pieces MSDS.pdf|Manganese Pieces MSDS]]<br />
*[[media:Manganese Sulfate MSDS.pdf|Manganese Sulfate MSDS]]<br />
*[[media:Mesitylene MSDS.pdf|Mesitylene MSDS]]<br />
*[[media:Methacryloxypropyltrimethoxysilane-3 MSDS.pdf|Methacryloxypropyltrimethoxysilane-3 MSDS]]<br />
*[[media:Methane MSDS.pdf|Methane MSDS]]<br />
*[[media:Methylstyrene MSDS.pdf|Methylstyrene MSDS]]<br />
*[[media:Methyltrimethoxysilane MSDS.pdf|Methyltrimethoxysilane MSDS]]<br />
*[[media:MicroChem 101 Developer MSDS.pdf|MicroChem 101 Developer MSDS]]<br />
*[[media:Microposit 351 Developer MSDS.pdf|Microposit 351 Developer MSDS]]<br />
*[[media:Microposit S1822 Photoresist MSDS.pdf|Microposit S1822 Photoresist MSDS]]<br />
*[[media:Microprime HP Primer MSDS.pdf|Microprime HP Primer MSDS]]<br />
*[[media:Mung MSDS.pdf|Mung MSDS]]<br />
|width=300|<br />
*[[media:N Methyl 2 Pyrrolidone MSDS.pdf|N Methyl 2 Pyrrolidone MSDS]]<br />
*[[media:NANO 495PMMA MSDS.pdf|NANO 495PMMA MSDS]]<br />
*[[media:NANO LOR B Series Resist MSDS.pdf|NANO LOR B Series Resist MSDS]]<br />
*[[media:NANO MMA(17.5)MAA EL 10 MSDS.pdf|NANO MMA(17.5)MAA EL 10 MSDS]]<br />
*[[media:NEB-31 Photoresist MSDS.pdf|NEB-31 Photoresist MSDS]]<br />
*[[media:NOE Etch I MSDS.pdf|NOE Etch I MSDS]]<br />
*[[media:NR5-8000 Photoresist MSDS.pdf|NR5-8000 Photoresist MSDS]]<br />
*[[media:NR7-1500PY Photoresist MSDS.pdf|NR7-1500PY Photoresist MSDS]]<br />
*[[media:NR71-6000PY Photoresist MSDS.pdf|NR71-6000PY Photoresist MSDS]]<br />
*[[media:NR9-8000 Photoresist MSDS.pdf|NR9-8000 Photoresist MSDS]]<br />
*[[media:NXR-1010 Imprint Resist MSDS.pdf|NXR-1010 Imprint Resist MSDS]]<br />
*[[media:NXR-1020 Imprint Resist MSDS.pdf|NXR-1020 Imprint Resist MSDS]]<br />
*[[media:NXR-2010 Imprint Resist MSDS.pdf|NXR-2010 Imprint Resist MSDS]]<br />
*[[media:NXR-3020 Imprint Resist MSDS.pdf|NXR-3020 Imprint Resist MSDS]]<br />
*[[media:NXR-3022 Imprint Resist MSDS.pdf|NXR-3022 Imprint Resist MSDS]]<br />
*[[media:Nano MMA Photoresist MSDS.pdf|Nano MMA Photoresist MSDS]]<br />
*[[media:Nano PMGI SF-series Photoresist MSDS.pdf|Nano PMGI SF-series Photoresist MSDS]]<br />
*[[media:NanoRemover PG Photoresist Remover MSDS.pdf|NanoRemover PG Photoresist Remover MSDS]]<br />
*[[media:NanoStrip MSDS.pdf|NanoStrip MSDS]]<br />
*[[media:Nanochem OMA MSDS.pdf|Nanochem OMA MSDS]]<br />
*[[media:Negative Resist NR9-8000 MSDS.pdf|Negative Resist NR9-8000 MSDS]]<br />
*[[media:Nickel Ammonium Sulfate MSDS.pdf|Nickel Ammonium Sulfate MSDS]]<br />
*[[media:Nickel Chloride MSDS.pdf|Nickel Chloride MSDS]]<br />
*[[media:Nickel MSDS.pdf|Nickel MSDS]]<br />
*[[media:Nickel Sulfamate MSDS.pdf|Nickel Sulfamate MSDS]]<br />
*[[media:Nickel Sulfamate Plating Solution MSDS.pdf|Nickel Sulfamate Plating Solution MSDS]]<br />
*[[media:Nickel Sulfamate Semi-Bright Nickel "S" MSDS.pdf|Nickel Sulfamate Semi-Bright Nickel "S" MSDS]]<br />
*[[media:Nickel Sulfate Crystal MSDS.pdf|Nickel Sulfate Crystal MSDS]]<br />
*[[media:Nickelous Sulfate MSDS.pdf|Nickelous Sulfate MSDS]]<br />
*[[media:Nickle (II) Carbonate MSDS.pdf|Nickle (II) Carbonate MSDS]]<br />
*[[media:Nitrogen MSDS.pdf|Nitrogen MSDS]]<br />
|-<br />
|}<br />
<br />
<br />
{{MSDS}}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Staff&diff=2753Template:Staff2013-05-16T14:58:51Z<p>Zwarburg: </p>
<hr />
<div>{| border="0" cellpadding="20" style="float: right;"<br />
|-<br />
|<br />
{| border="0" cellpadding="2" cellspacing="0" style="background: whitesmoke; border: 1px solid #aaaaaa" align="center"<br />
|-<br />
! style="background:skyblue;" |{{{name|<includeonly>{{PAGENAME}}</includeonly>}}}<br />
|-<br />
|<br />
{| border="0" cellpadding="2" cellspacing="1" style="background: none; border-top:1px solid #aaaaaa"<br />
|-<br />
!width=100|Position<br />
!width=200|{{{position|NONE}}} <br />
|-<br />
!width=150|Room Number<br />
!width=150|{{{room|NONE}}}<br />
|-<br />
!width=150|Phone<br />
!width=150|{{{phone|NONE}}}<br />
|-<br />
{{#if:{{{cell|}}} |<br />
!width=150{{!}}Cell<br />
!width=150{{!}}{{{cell|}}}<br />
}}<br />
|-<br />
!width=150|E-Mail<br />
!width=150|[mailto:{{{email|NONE}}} {{{email|NONE}}}]<br />
|-<br />
|}<br />
|}<br />
|}<br />
<includeonly>[[category:Staff]]</includeonly><br />
<noinclude><br />
[[category:Templates]]<br />
<br />
<div style="width: 30%;"><pre><br />
{{staff|{{PAGENAME}}<br />
|position = <br />
|room = <br />
|phone = (805)839-3918x###<br />
|cell = .....<br />
|email = NAME@ece.ucsb.edu<br />
}}<br />
</pre></div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Template:Tool&diff=2752Template:Tool2013-05-16T14:58:23Z<p>Zwarburg: </p>
<hr />
<div>{| border="0" cellpadding="20" align="right" style="float: right;"<br />
|-<br />
|<br />
{| border="0" cellpadding="2" cellspacing="0" style="background: whitesmoke; border: 1px solid #aaaaaa" align="center"<br />
|-<br />
! style="background:skyblue;" |{{{name|<includeonly>{{PAGENAME}}</includeonly>}}}<br />
|-<br />
|<br />
<!-- BORDER AROUND THE IMAGE --><br />
{| border="0" cellpadding="2" cellspacing="0" style="background: black; border: 1px solid #aaaaaa" align="center"<br />
|-<br />
![[image:{{{picture|none.jpg}}}|350px|center|]]<br />
|-<br />
|}<br />
<!-- END OF BORDER AROUND IMAGE --><br />
|-<br />
|<br />
{| border="0" cellpadding="2" cellspacing="1" style="background: none; border-top:1px solid #aaaaaa"<br />
|-valign="top"<br />
!width=150|Tool Type<br />
!width=200|[[:Category:{{{type|NONE}}}|{{{type|NONE}}}]]<br />
|-valign="top"<br />
!width=150|Location<br />
!width=200|{{{location|}}}<br />
|-valign="top"<br />
{{#ifeq: {{{super}}}|Tony Bosch|{{StaffInfo|Tony Bosch|(805) 893-3918X217|(805) 698-2690|bosch@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Adam Abrahamsen|{{StaffInfo|Adam Abrahamsen|(805) 893-3918X213|(805) 570-6068|abrahamsen@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Ning Cao|{{StaffInfo|Ning Cao|(805) 893-4689| |ningcao@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Don Freeborn|{{StaffInfo|Don Freeborn|(805) 893-3918x216|(805) 260-0425 |dfreeborn@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Aidan Hopkins|{{StaffInfo|Aidan Hopkins|(805) 893-3918x208|(530) 228-3755 |hopkins@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Bill Mitchell|{{StaffInfo|Bill Mitchell|(805) 893-4974| |mitchell@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Tom Reynolds|{{StaffInfo|Tom Reynolds|(805) 893-3918x215|(805) 451-3979 |reynolds@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Mike Silva|{{StaffInfo|Mike Silva|(805) 893-3918x219|(805) 245-9356|silva@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Biljana Stamenic|{{StaffInfo|Biljana Stamenic|(805) 893-4002 | |biljana@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Brian Thibeault|{{StaffInfo|Brian Thibeault|(805) 893-2268||thibeault@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Jack Whaley|{{StaffInfo|Jack Whaley|(805) 893-8174|(805) 687-8118 |whaley@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Luis Zuzunaga|{{StaffInfo|Luis Zuzunaga|(805) 893-3918x218||luis@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Zack Warburg|{{StaffInfo|Zack Warburg|(805) 893-3918x200| |zwarburg@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Brian Lingg|{{StaffInfo|Brian Lingg|(805) 893-3918X210|(951) 852-8008|lingg@ece.ucsb.edu}}}}{{#ifeq: {{{super}}}|Tino Sy|{{StaffInfo|Tino Sy|(805) 893-3918x209||sy@ece.ucsb.edu}}}}<br />
|-<br />
|}<br />
{| border="0" cellpadding="2" cellspacing="1" style="background: none; border-top:1px solid #aaaaaa"<br />
|-valign="top"<br />
!width=150|Description<br />
!width=200|{{{description|NONE}}} <br />
|-valign="top"<br />
!width=150|Manufacturer<br />
!width=200|{{{manufacturer|NONE}}}<br />
|-valign="top"<br />
{{#if:{{{model|}}} |<br />
!width=150{{!}}Model<br />
!width=200{{!}}{{{model|}}}<br />
}}<br />
|-valign="top"<br />
{{#if:{{{materials|}}} |<br />
!width=150{{!}}Materials<br />
!width=200{{!}}{{{materials|}}}<br />
}}<br />
|-align="center"<br />
{{#ifeq: {{{type}}}|Vacuum Deposition|{{!}}colspan="2"{{!}}'''[[Vacuum Deposition Recipes{{!}}{{PAGENAME}} Recipes]]'''}}{{#ifeq: {{{type}}}|Dry Etch|{{!}}colspan="2"{{!}}'''[[Dry Etching Recipes{{!}}{{PAGENAME}} Recipes]]'''}}{{#if:{{{recipe|}}}|{{!}}colspan="2"{{!}}'''[[{{{recipe}}} Recipes{{!}}{{PAGENAME}} Recipes]]'''}}<br />
|-<br />
|}<br />
{{#if:{{{toolid|}}}|<br />
{{{!}} border="0" cellpadding="2" cellspacing="1" style="background: none; border-top:1px solid #aaaaaa"<br />
{{!}}-valign="top"<br />
{{!}}width=350 align=center{{!}}[http://signupmonkey.ece.ucsb.edu/cgi-bin/users/{{#ifeq:{{{toolid|}}}|999|tools.cgi|browse.cgi?tool_ID={{{toolid|}}}}} Sign up for this tool]<br />
{{!}}-<br />
{{!}}}|[[category:NOID]]<br />
}}<br />
|}<br />
|}<br />
<includeonly>[[category:Tools]][[Category:{{{type|NONE}}}]]</includeonly><br />
<noinclude><br />
[[category:Templates]]<br />
<div style="width: 70%;"><pre><br />
{{tool|{{PAGENAME}}<br />
|picture = toolName.jpg<br />
|type = ToolType<br />
|super = fullName<br />
|location = Bay #<br />
|description = <br />
|manufacturer = <br />
|materials = (If Applicable)<br />
|toolid = ### (this is the number at the end of the url for a tool on SignupMonkey. Using 999 will link to the Main tool page on SignupMonkey)<br />
|recipe = The type of process that it is (Lithography, Vacuum Deposition, Dry Etching, Wet Etching, Thermal Processing)<br />
}}<br />
</pre></div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=MediaWiki:Loginreqpagetext&diff=2751MediaWiki:Loginreqpagetext2013-05-16T14:52:47Z<p>Zwarburg: </p>
<hr />
<div><div style="font-size:200%; text-align:center;"> You must [[Special:UserLogin|LOGIN]] to view this page.<br><br> Use of this wiki is currently restricted to registered members of the UCSB Nanofab. <br><br> If you feel you have reached this message in error,<br> <br> please contact the [mailto:NanofabWiki@ece.ucsb.edu Wiki Admin].</div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=2725Contact Alignment Recipes2012-11-14T00:49:46Z<p>Zwarburg: /* Contact Aligner (SUSS MA-6) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
=Notes=<br />
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.<br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
|-<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|4.2”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2724Stepper Recipes2012-11-14T00:49:28Z<p>Zwarburg: /* Stepper 2 (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|'''0.30”'''<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|'''0.72”'''<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|'''1.35"'''<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
|-<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|'''0.06”'''<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|'''0.17”'''<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
<br />
|-<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2723Stepper Recipes2012-11-14T00:49:04Z<p>Zwarburg: /* Negative Resist (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|'''0.30”'''<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|'''0.72”'''<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|'''1.35"'''<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
|-<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|'''0.06”'''<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|'''0.17”'''<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
<br />
|-<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2722Stepper Recipes2012-11-14T00:48:41Z<p>Zwarburg: /* Positive Resist (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|'''0.30”'''<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|'''0.72”'''<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|'''1.35"'''<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
|-<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|'''0.06”'''<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*<strike>0.5 um res. possible, but resist is sensitive to environment</strike><br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|'''0.17”'''<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*<strike> ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}</strike><br />
|-<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=2721Contact Alignment Recipes2012-11-14T00:47:52Z<p>Zwarburg: /* Negative Resist (MA-6) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
=Notes=<br />
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.<br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
|-<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|4.2”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=2720Lithography Recipes2012-11-14T00:47:01Z<p>Zwarburg: /* Chemical Datasheets */</p>
<hr />
<div>==Lift-Off Techniques==<br />
*{{fl|Liftoff-Techniques.pdf|Description/Tutorial}}<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
<br />
==Chemical Datasheets==<br />
{|<br />
|-valign="top"<br />
|width=400|<br />
;Positive Photoresists<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}<br />
*{{fl|SPR950-Positive-Resist-Datasheet.pdf|SPR950-0.8}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
;Negative Photoresists<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}<br />
;Underlayers<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF-11, PMGI SF-13, PMGI SF-15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
;E-beam resists<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
|<br />
;Nanoimprinting<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
;Contrast Enhancement Materials<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
;Anti-Reflection Coatings<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC}}<br />
;Developers<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
;Photoresist Removers<br />
*{{fl|1165-Resist-Remover.pdf|1165}}<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|PRX-127-Resist-Remover.pdf|PRX-127}}<br />
|}<br />
<br />
==Recipes==<br />
{{Recipe Table Explanation}}<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! height="45" colspan="9" | <div style="font-size: 150%;">Lithography Recipes</div><br />
|- bgcolor="#D0E7FF"<br />
| <!-- INTENTIONALLY LEFT BLANK --> <br> <br />
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[Contact Alignment Recipes|Contact Aligners]]''' <br />
! bgcolor="#D0E7FF" align="center" colspan="3" | '''[[Stepper Recipes|Steppers]]''' <br />
! width="30" bgcolor="#D0E7FF" align="center" | '''[[Flood Exposure Recipes|Flood Expose]]''' <br />
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[E-Beam Lithography Recipes|E-Beam Lithography]]'''<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" | '''Positive Resists''' <br />
{{LithRecipe Table}} <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4110<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4210<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4330RS<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | OCG 825-35CS<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 950-0.8<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-0.9<br />
| <br> <br />
| <br> <br />
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}} <br />
| {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-1.8<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 220-3.0<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 220-7.0<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | THMR-IP3600 HP D<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" |UV6-0.7 <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Negative Resists''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZ5214-EIR<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2020<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2035<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2070<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF P5510<br />
| <br />
| <br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | UVN30-0.5<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | SU-8 2015<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Underlayers''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | PMGI SF-11<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | PMGI SF-15<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | LOL 2000<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | XHRIC-11 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AR-2 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | DS-K 101-307 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Overlayers''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | CEM-365 IS<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''E-Beam Resists''' <br />
{{LithRecipe Table}} <br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | ??????<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | ???????<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Nanoimprint Resists''' <br />
{{LithRecipe Table}} <br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | MR-I 7020<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | Nanonex NX-1020<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | <br />
{{LithRecipe Table}}<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=2719Contact Alignment Recipes2012-11-14T00:43:16Z<p>Zwarburg: </p>
<hr />
<div>{{recipes|Lithography}}<br />
=Notes=<br />
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.<br />
<br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
|-<br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<strike><br />
*Concentrated 400K Dev. Etches 5214</strike><br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|4.2”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<strike><br />
*Using i-line filter in MJB-3. 0.7 um resolution possible</strike><br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<strike><br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}</strike><br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=User_talk:Thibeault&diff=2715User talk:Thibeault2012-11-09T17:01:47Z<p>Zwarburg: Wiki Update</p>
<hr />
<div>== Wiki Update ==<br />
<br />
#First off, you will notice on some of the pages there are red boxes with "To Do:" followed by a message. These are messages to me and you about what needs to be checked/verified/fixed on a page.<br />
#[[Lithography Recipes]]<br />
##I placed the two "Lift-Off Technique" documents at the top of the [[Lithography Recipes]] page. <br />
##After that, are the chemical datasheets. You will see them sorted as they are on the old website. Let me know how and where you would like these organized. One thing to note, on the old website there were some links that all went to same document. For example, AZ4110, AZ4210 and AZ4330 all linked to a document for "AZP4000". I have listed these three docs as "AZP4000 (AZ4110, AZ4210, AZ4330)".<br />
#[[Contact Alignment Recipes]]<br />
##I calculated the times for the MA-6 using the factor. If you can check that the times are valid that would be great.<br />
##I wasn't certain if the comments translate from the MJB-3 to the MA-6. For this reason, I kept the comments but used the <strike>strike</strike> technique until they are verified by you.<br />
#[[Stepper Recipes]]<br />
##Again I calculated the exposure times for the AutoStep 200 using the formula. In this case, values that I calculated I put in bold to differentiate from the ones that had per-calculated exposure times. You will see a note on the page about this. <br />
##Also again I used the strike technique to strike out the comments until you tell me that they are valid for the AutoStep200 as well. <br />
<br />
<br />
Let me know if there is anything that needs fixing, changing or reformatting. <br />
<br />
Thanks,<br />
Zack --[[User:Zwarburg|Zwarburg]] 17:01, 9 November 2012 (UTC)</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=2714Contact Alignment Recipes2012-11-09T16:56:05Z<p>Zwarburg: /* Negative Resist (MA-6) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
=Notes=<br />
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<strike><br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}</strike><br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<strike><br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}</strike><br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<strike><br />
*Concentrated 400K Dev. Etches 5214</strike><br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|4.2”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<strike><br />
*Using i-line filter in MJB-3. 0.7 um resolution possible</strike><br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<strike><br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}</strike><br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&diff=2713Contact Alignment Recipes2012-11-09T16:55:36Z<p>Zwarburg: /* Positive Resist (MA-6) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
=Notes=<br />
Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers. <br />
=[[Suss Aligners (SUSS MJB-3)]]=<br />
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|8”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|13”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|18”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|25”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|60”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
=[[Contact Aligner (SUSS MA-6)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ4110<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 1.1 um<br />
|3.3”<br />
|AZ400K:DI 1:4<br />
|50"<br />
|align="left"|<br />
|-<br />
|AZ4210<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 2.1 um<br />
|5.4”<br />
|AZ400K:DI 1:4<br />
|70”<br />
|align="left"|<br />
|-<br />
|AZ4330<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 3.3 um<br />
|7.5”<br />
|AZ400K:DI 1:4<br />
|90”<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|3.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.5 um<br />
|10.4”<br />
|AZ300MIF<br />
|50”<br />
|align="left"|<strike><br />
*Post Bake 115°C /60”<br />
*Better Cl2 etch resistance than 4330<br />
*{{fl|SPR220-3contactrecipe.pdf|More Information}}</strike><br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.5 um<br />
|25”<br />
|AZ300MIF<br />
|70”<br />
|align="left"|<strike><br />
*{{fl|SPR220-7contactrecipe.pdf|More Information}}</strike><br />
|}<br />
<br />
==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except reduced by a factor of 2.4.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|2.1”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|4.2”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|4.2”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=2712Lithography Recipes2012-11-09T16:47:10Z<p>Zwarburg: /* Recipes */</p>
<hr />
<div>==Lift-Off Techniques==<br />
*{{fl|Liftoff-Techniques.pdf|Description/Tutorial}}<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
<br />
==Chemical Datasheets==<br />
{{todo|Ask Brian where these should go...}}<br />
;Positive Photoresists<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-2, SPR220-7)}}<br />
*{{fl|SPR950-Positive-Resist-Datasheet.pdf|SPR950-0.8}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
;Negative Photoresists<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020}}<br />
;Underlayers<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF-11, PMGI SF-13, PMGI SF-15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
;E-beam resists<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
;Nanoimprinting<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
;Contrast Enhancement Materials<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
;Anti-Reflection Coatings<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC}}<br />
;Developers<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
;Photoresist Removers<br />
*{{fl|1165-Resist-Remover.pdf|1165}}<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|PRX-127-Resist-Remover.pdf|PRX-127}}<br />
<br />
==Recipes==<br />
{{Recipe Table Explanation}}<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! height="45" colspan="9" | <div style="font-size: 150%;">Lithography Recipes</div><br />
|- bgcolor="#D0E7FF"<br />
| <!-- INTENTIONALLY LEFT BLANK --> <br> <br />
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[Contact Alignment Recipes|Contact Aligners]]''' <br />
! bgcolor="#D0E7FF" align="center" colspan="3" | '''[[Stepper Recipes|Steppers]]''' <br />
! width="30" bgcolor="#D0E7FF" align="center" | '''[[Flood Exposure Recipes|Flood Expose]]''' <br />
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[E-Beam Lithography Recipes|E-Beam Lithography]]'''<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" | '''Positive Resists''' <br />
{{LithRecipe Table}} <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4110<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4210<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4330RS<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | OCG 825-35CS<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 950-0.8<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-0.9<br />
| <br> <br />
| <br> <br />
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}} <br />
| {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-1.8<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 220-3.0<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 220-7.0<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | THMR-IP3600 HP D<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" |UV6-0.7 <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Negative Resists''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZ5214-EIR<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2020<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2035<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2070<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF P5510<br />
| <br />
| <br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | UVN30-0.5<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | SU-8 2015<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Underlayers''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | PMGI SF-11<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | PMGI SF-15<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | LOL 2000<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | XHRIC-11 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AR-2 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | DS-K 101-307 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Overlayers''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | CEM-365 IS<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''E-Beam Resists''' <br />
{{LithRecipe Table}} <br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | ??????<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | ???????<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Nanoimprint Resists''' <br />
{{LithRecipe Table}} <br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | MR-I 7020<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | Nanonex NX-1020<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | <br />
{{LithRecipe Table}}<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2711Stepper Recipes2012-11-09T16:45:25Z<p>Zwarburg: /* Positive Resist (GCA 6300) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|'''0.30”'''<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|'''0.72”'''<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<strike><br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}</strike><br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|'''1.35"'''<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<strike><br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}</strike><br />
|-<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|'''0.06”'''<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*<strike>0.5 um res. possible, but resist is sensitive to environment</strike><br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|'''0.17”'''<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*<strike> ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}</strike><br />
|-<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2710Stepper Recipes2012-11-09T16:45:14Z<p>Zwarburg: /* Stepper 2 (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|'''0.30”'''<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|'''0.72”'''<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<strike><br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}</strike><br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|'''1.35"'''<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|120"<br />
|align="left"|<strike><br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}</strike><br />
|-<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|'''0.06”'''<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*<strike>0.5 um res. possible, but resist is sensitive to environment</strike><br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|'''0.17”'''<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*<strike> ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}</strike><br />
|-<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2709Stepper Recipes2012-11-09T16:43:55Z<p>Zwarburg: /* Positive Resist (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|-<br />
<br />
<br />
<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|'''0.30”'''<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|'''0.72”'''<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<strike><br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}</strike><br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|'''1.35"'''<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<strike><br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}</strike><br />
|-<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|'''0.06”'''<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*<strike>0.5 um res. possible, but resist is sensitive to environment</strike><br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|'''0.17”'''<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*<strike> ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}</strike><br />
|-<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2708Stepper Recipes2012-11-09T16:40:17Z<p>Zwarburg: /* Negative Resist (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
<br />
'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|'''0.06”'''<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*<strike>0.5 um res. possible, but resist is sensitive to environment</strike><br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|'''0.17”'''<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*<strike> ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}</strike><br />
|-<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2707Stepper Recipes2012-11-09T16:34:54Z<p>Zwarburg: /* Stepper 2 (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
{{Todo|Have Brian double check the exposure times.}}<br />
{{Todo|Are the "more information" sheets valid for both tools?}}<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Lithography_Recipes&diff=2706Lithography Recipes2012-11-09T16:19:26Z<p>Zwarburg: /* Recipes */</p>
<hr />
<div>==Lift-Off Techniques==<br />
*{{fl|Liftoff-Techniques.pdf|Description/Tutorial}}<br />
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|Bi-Layer Process with PMGI Underlayer and Contact Aligner}}<br />
<br />
==Chemical Datasheets==<br />
{{todo|Ask Brian where these should go...}}<br />
;Positive Photoresists<br />
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}<br />
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}<br />
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-2, SPR220-7)}}<br />
*{{fl|SPR950-Positive-Resist-Datasheet.pdf|SPR950-0.8}}<br />
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}<br />
;Negative Photoresists<br />
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}<br />
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}<br />
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020}}<br />
;Underlayers<br />
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF-11, PMGI SF-13, PMGI SF-15)}}<br />
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}<br />
;E-beam resists<br />
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}<br />
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}<br />
;Nanoimprinting<br />
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}<br />
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}}<br />
;Contrast Enhancement Materials<br />
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}<br />
;Anti-Reflection Coatings<br />
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC}}<br />
;Developers<br />
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}<br />
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}}<br />
;Photoresist Removers<br />
*{{fl|1165-Resist-Remover.pdf|1165}}<br />
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}}<br />
*{{fl|PRX-127-Resist-Remover.pdf|PRX-127}}<br />
<br />
==Recipes==<br />
{{Recipe Table Explanation}}<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|- bgcolor="#D0E7FF"<br />
! height="45" colspan="9" | <div style="font-size: 150%;">Lithography Recipes</div><br />
|- bgcolor="#D0E7FF"<br />
| <!-- INTENTIONALLY LEFT BLANK --> <br> <br />
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[Contact Alignment Recipes|Contact Aligners]]''' <br />
! bgcolor="#D0E7FF" align="center" colspan="3" | '''[[Stepper Recipes|Steppers]]''' <br />
! width="30" bgcolor="#D0E7FF" align="center" | '''[[Flood Exposure Recipes|Flood Expose]]''' <br />
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[E-Beam Lithography Recipes|E-Beam Lithography]]'''<br />
|-<br />
! width="150" bgcolor="#D0E7FF" align="center" | '''Positive Resists''' <br />
{{LithRecipe Table}} <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4110<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4210<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZ4330RS<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | OCG 825-35CS<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 950-0.8<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-0.9<br />
| <br> <br />
| <br> <br />
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}} <br />
| {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-1.8<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 220-3.0<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | SPR 220-7.0<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}<br />
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}}<br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | THMR-IP3600 HP D<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" |UV6-0.7 <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
| bgcolor="EEFFFF" | <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Negative Resists''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZ5214-EIR<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2020<br />
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}}<br />
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}}<br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2035<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF 2070<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AZnLOF P5510<br />
| <br />
| <br />
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}}<br />
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}<br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | UVN30-0.5<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | SU-8 2015<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Underlayers''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | PMGI SF-11<br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br> <br />
| <br><br />
|-<br />
| bgcolor="#D0E7FF" align="center" | PMGI SF-15<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | LOL 2000<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | XHRIC-11 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | AR-2 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | DS-K 101-307 (BARC)<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Overlayers''' <br />
{{LithRecipe Table}} <br />
|-bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | CEM-365 IS<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''E-Beam Resists''' <br />
{{LithRecipe Table}} <br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | ??????<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | ???????<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | '''Nanoimprint Resists''' <br />
{{LithRecipe Table}} <br />
|- bgcolor="EEFFFF"<br />
| bgcolor="#D0E7FF" align="center" | MR-I 7020<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
| bgcolor="#D0E7FF" align="center" | Nanonex NX-1020<br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
| <br />
|-<br />
! bgcolor="#D0E7FF" align="center" | <br />
{{LithRecipe Table}}<br />
|}</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2705Stepper Recipes2012-11-09T16:18:45Z<p>Zwarburg: /* Stepper 2 (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2704Stepper Recipes2012-11-09T16:18:35Z<p>Zwarburg: /* Stepper 2 (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
==Negative Resist (Autostep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2703Stepper Recipes2012-11-09T16:18:06Z<p>Zwarburg: /* Negative Resist (GCA 6300) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
==Negative Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2702Stepper Recipes2012-11-09T16:15:27Z<p>Zwarburg: </p>
<hr />
<div>{{recipes|Lithography}}<br />
<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2701Stepper Recipes2012-11-09T16:15:06Z<p>Zwarburg: /* Positive Resist (Autostep200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|.25”<br />
| -1<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.4 um lines dense good<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:NLOF5510-AS200-stepperrecipe.pdf&diff=2700File:NLOF5510-AS200-stepperrecipe.pdf2012-11-09T16:14:13Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2699Stepper Recipes2012-11-09T16:12:07Z<p>Zwarburg: /* Positive Resist (Autostep200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SPR955-1.8-AS200-stepperrecipe.pdf&diff=2698File:SPR955-1.8-AS200-stepperrecipe.pdf2012-11-09T16:12:01Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2697Stepper Recipes2012-11-09T16:11:43Z<p>Zwarburg: /* Positive Resist (Autostep200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
| -1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2696Stepper Recipes2012-11-09T16:11:32Z<p>Zwarburg: /* Positive Resist (Autostep200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um holes<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|95°C/90”<br />
|~ 1.8 um<br />
|0.4”<br />
|-1<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2695Stepper Recipes2012-11-09T16:07:17Z<p>Zwarburg: /* Positive Resist (Autostep200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.8”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|0.5 um holes<br />
|align="left"|<br />
*0.5um holes<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2694Stepper Recipes2012-11-09T16:06:12Z<p>Zwarburg: /* Positive Resist (Autostep200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2693Stepper Recipes2012-11-09T15:49:00Z<p>Zwarburg: /* Stepper 2 (AutoStep 200) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
==Positive Resist (Autostep200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM-0.9<br />
|3 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|0.35”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*0.5um dense lines<br />
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SPR955-0.9-AS200-stepperrecipe.pdf&diff=2692File:SPR955-0.9-AS200-stepperrecipe.pdf2012-11-09T15:48:49Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2691Stepper Recipes2012-11-09T01:00:14Z<p>Zwarburg: /* Negative Resist (GCA 6300) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=75|Flood<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1.0 um<br />
|0.2”<br />
|0<br />
|110°C/60”<br />
|60"<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um res. possible, but resist is sensitive to environment<br />
|-<br />
|nLOF5510<br />
|3 krpm/30”<br />
|90°C/60”<br />
|~ 0.93 um<br />
|0.74”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um line openings good dense or isolated<br />
*Use heated 1165 stripper for removal or lift-off<br />
*{{fl|nLOF5510stepperrecipe.pdf|See nLOF5510 data file}}<br />
|-<br />
|nLOF2020<br />
|4 krpm/30”<br />
|110°C/60”<br />
|~ 2 um<br />
|0.55”<br />
| -6<br />
|110°C/60”<br />
|0<br />
|AZ300MIF<br />
|90"<br />
|align="left"|<br />
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.<br />
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.<br />
*{{fl|nLOF2020stepperrecipe.pdf|See nLOF2020 Data File}}<br />
|-<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:NLOF2020stepperrecipe.pdf&diff=2690File:NLOF2020stepperrecipe.pdf2012-11-09T00:59:58Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:NLOF5510stepperrecipe.pdf&diff=2689File:NLOF5510stepperrecipe.pdf2012-11-09T00:56:16Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2688Stepper Recipes2012-11-09T00:29:14Z<p>Zwarburg: /* Positive Resist (GCA 6300) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=75|Bake<br />
!width=75|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=75|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=300|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|SPR220-3.0<br />
|2.5 krpm/30”<br />
|115°C/90”<br />
|~ 2.7 um<br />
|2.4”<br />
|10<br />
|115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR-220-3.0_OptimizationNew.pdf|See SPR220-3 Data File}}<br />
|-<br />
|SPR220-7.0<br />
|3.5 krpm/45”<br />
|115°C/120”<br />
|~ 7.0 um<br />
|4.5”<br />
|0<br />
|*50°C/60”<br><br />
115°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*1.0 um isolated lines; 1.25 um isolated spaces<br />
*&#42;Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C<br />
*{{fl|SPR-220-7.0stepperrecipe.pdf|See SPR220-7 Data File}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SPR-220-7.0stepperrecipe.pdf&diff=2687File:SPR-220-7.0stepperrecipe.pdf2012-11-09T00:28:32Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SPR-220-3.0_OptimizationNew.pdf&diff=2686File:SPR-220-3.0 OptimizationNew.pdf2012-11-09T00:24:58Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Spr955_1.8GCA6300.pdf&diff=2685File:Spr955 1.8GCA6300.pdf2012-11-09T00:23:07Z<p>Zwarburg: </p>
<hr />
<div></div>Zwarburghttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&diff=2684Stepper Recipes2012-11-09T00:23:04Z<p>Zwarburg: /* Positive Resist (GCA 6300) */</p>
<hr />
<div>{{recipes|Lithography}}<br />
Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.<br />
<br />
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.<br />
<br />
=[[Stepper 1 (GCA 6300)]]=<br />
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time. <br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|Focus Offset<br />
!width=100|PEB<br />
!width=100|Developer<br />
!width=125|Developer Time<br />
!width=200|Comments<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|1.2”<br />
|0<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br />
|3 krpm/30”<br />
|95°C/60”<br />
|~ 0.9 um<br />
|3.0”<br />
|4<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*Much longer exposure time for dense isolated holes<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR955CM0.9<br><br />
CEM365iS<br />
|3 krpm/30”<br><br />
5 krpm/30”<br />
|95°C/90”<br />
|~ 0.9 um<br />
|2.2”<br />
| -10<br />
|110°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.35um isolated lines by SEM measurement.<br />
*Higher exposure time due to CEM<br />
*{{fl|SPR955CMstepperrecipe.pdf|See SPR955CM data file}}<br />
|-<br />
|SPR950-0.8<br />
|4 krpm/30”<br />
|95°C/60”<br />
|~ 0.8 um<br />
|1.0”<br />
|0<br />
|105°C/60”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
|-<br />
|SPR955CM-1.8<br />
|4 krpm/30”<br />
|90°C/90”<br />
|~ 1.8 um<br />
|2.3”<br />
|0<br />
|110°C/90”<br />
|AZ300MIF<br />
|60"<br />
|align="left"|<br />
*0.5 um isolated lines<br />
*{{fl|spr955_1.8GCA6300.pdf|See 955CM-1.8 data file}}<br />
|-<br />
|}<br />
<br />
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--><br />
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.<br />
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"<br />
|-bgcolor="#D0E7FF"<br />
!width=100|Resist<br />
!width=100|Spin Cond.<br />
!width=100|Bake<br />
!width=100|Thickness<br />
!width=125|Exposure Time<br />
!width=100|PEB<br />
!width=100|Flood<br />
!width=125|Developer<br />
!width=125|Developer Time<br />
!width=350|Comments<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|5”<br />
|110°C/60”<br />
|60”<br />
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF<br />
|60"<br><br>45"<br />
|align="left"|<br />
*Concentrated 400K Dev. Etches 5214<br />
|-<br />
|AZ5214<br />
|6 krpm/30”<br />
|95°C/60”<br />
|~ 1 um<br />
|10”<br />
|110°C/60”<br />
|60”<br />
|AZ300MIF<br />
|45”<br />
|align="left"|<br />
*Using i-line filter in MJB-3. 0.7 um resolution possible<br />
|-<br />
|AZnLOF2020<br />
|3 krpm/30”<br />
|110°C/90”<br />
|~ 2.1 um<br />
|10”<br />
|110°C/60”<br />
|<br />
|AZ300MIF<br />
|60”<br />
|align="left"|<br />
*Use i-line filter<br />
*For Undercut<br />
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}<br />
|}<br />
<br />
=[[Stepper 2 (AutoStep 200)]]=<br />
=[[Stepper 3 (ASML DUV)]]=</div>Zwarburg