https://wiki.nanofab.ucsb.edu/w/api.php?action=feedcontributions&user=Bosch+t&feedformat=atomUCSB Nanofab Wiki - User contributions [en]2024-03-28T23:37:29ZUser contributionsMediaWiki 1.35.13https://wiki.nanofab.ucsb.edu/w/index.php?title=S-Cubed_Flexi_-_Operating_Procedure&diff=160586S-Cubed Flexi - Operating Procedure2022-10-18T16:22:50Z<p>Bosch t: /* Initial */</p>
<hr />
<div>{{WIP}}<br />
'''Only staff & designated maintenance users are allowed to write recipes on this tool! '''<br />
Maintaining low particle counts on this tool is extremely important, so users must strictly follow the training procedures. The Underside of your wafers must be clean to avoid contamination!<br />
Processes currently available to lab users:<br />
<br />
*DS-K101 BARC (can be used like DUV42P)<br />
**[[DS-K101-304 Bake Temp. versus Develop Rate|See this table of develop rate vs. bake temp for DS-K101]]<br />
*UV6 Positive DUV Resist<br />
**Various spin speeds available.<br />
*''(PMGI and PMMA not yet available for general use)''<br />
<br />
===Initial===<br />
<br />
*Make sure system is not running a process - Lot view shows no wafers or batches running.<br />
<br />
*Check liquid supplies<br />
**Check PR, if the PR bottle is empty (see large bubbles in tube) use the "report tool issue" in signupmonkey. '''''<big><u>Users are not authorized to change or add any of the chemistries</u></big>'''''.<br />
<br />
(If running PMGI, check if nozzles cleaned)<br />
<br />
*Check PR nozzle "bath" - make sure it's not clogged (should have a bit of liquid, but not above drain hole). If it does, use wooden stick of swab to unclog.<br />
<br />
*Check if hot plates are set to the needs temperatures. If not, run Temp-change recipe:<br />
<br />
#Load dummy wafer ('''''<u>clean underside</u>''''')<br />
#run recipe: Staff>SET-<HP#>-<TEMP> recipe corresponding to needed temp. <br />
##Eg. '''Staff > SET-HP4-220C''' will set hotplate 4 to 220°C<br />
#Check that hotplate reach desired temp.(will overshoot by ~2-3°C)<br />
#After 5min bake, need +/-2°C before running process.<br />
<br />
===Run Wafers===<br />
<br />
*Load test "mechanical" wafer - run a test run of your desired recipe, make sure spin looks ok. Important for first UV6 run after >6hrs idle. 1st Mechanical wafer will likely show radial nonuniformity as dried PR is ejected. 2nd test wafer should spin with high uniformity.<br />
<br />
*Load your wafers into Left Cassette "Load Port 1", run your Route.<br />
<br />
<br /><br />
<br />
===Allowed Recipes===<br />
{| class="wikitable"<br />
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''<br />
|'''<u>Coating Material</u>'''<br />
|'''<u>Route/Chain</u>'''<br />
|'''<u>Name</u>'''<br />
|'''<u>Spin Speed</u>'''<br />
|'''<u>Bake Temp</u>'''<br />
|'''<u>Notes</u>'''<br />
|-<br />
|'''DS-K101'''<br />
|Route<br />
|Coat-DS-K101-304[5Krpm]-185C<br />
|<br />
|<br />
|Requires: HP4=185°C<br />
<br />
• [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]<br />
|-<br />
|'''UV6-0.8'''<br />
|Route<br />
|Staff > Coat-UV6[3.5K]-135C<br />
|3.5krpm<br />
|135°C<br />
|Requires: HP1=135°C<br />
|-<br />
|'''DS-K101 + UV6'''<br />
|Chain<br />
|Staff > Coat-DSK101[5K]-220C-UV6[3.5K]-135C<br />
|DSK: 5krpm<br />
UV6: 3.5krpm<br />
|DSK: 220°C<br />
UV6: 135°C<br />
|Requires:<br />
<br />
– HP4=220°C<br />
<br />
– HP1=135°C<br />
<br />
Plan for ~10-15 min per wafer.<br />
|-<br />
|'''Hotplate Set'''<br />
|Route<br />
|SET-HP4-220C<br />
|<br />
|<br />
|Hotplate 4 (top) between 218-222°C when done.<br />
|-<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|<br />
|}<br />
'''<big><u>NEVER RUN DEVELOPER RECIPES on this machine!</u></big>'''<br />
<br />
The developer recipes are prone to damage the hardware if not handled correctly - system is <u>NOT AVAILABLE for automated develop</u> at this time.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=ICP-PECVD_(Unaxis_VLR)&diff=159639ICP-PECVD (Unaxis VLR)2022-02-08T16:15:59Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=UnaxisPECVD.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 1<br />
|email=bosch@ece.ucsb.edu<br />
|description = High Density ICP PECVD<br />
|manufacturer = Unaxis<br />
|materials = <br />
|toolid=17<br />
}} <br />
=About=<br />
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.<br />
<br />
===Cluster Configuration===<br />
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.<br />
<br />
*'''PM3''': ICP-PECVD Deposition (this page)<br />
*'''PM1''': [[ICP-Etch (Unaxis VLR)|ICP Etch (Unaxis VLR)]]<br />
<br />
=Detailed Specifications=<br />
<br />
*1000W ICP source, 600W RF Sample Bias Power Supply<br />
*100 - 350°C sample temperature<br />
*100% SiD<sub>4</sub>, Ar, N<sub>2</sub>, O<sub>2</sub><br />
*Multiple 4” diameter wafer capable system<br />
*Pieces possible by mounting or placing on 4 ” wafer<br />
<br />
=Documentation=<br />
<br />
*[[Unaxis VLR ICP-PECVD - Std. Operating Procedure|Operating Instructions]]<br />
*[[Unaxis wafer coating procedure]] - ''process flow for achieving high-quality coatings.''<br />
**For particle counting procedure, see the [https://wiki.nanotech.ucsb.edu/wiki/Wafer_scanning_process_traveler Surfscan Scanning Procedure]<br />
<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=1af6f3ce-8fc4-4a50-884a-ae3600d2863d <u>Unaxis ICP-PECVD Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.<br />
You must log in using your UCSB ID Net account information BEFORE viewing the video or you will have to watch the video again.''<br />
<br />
== Recipes ==<br />
You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Laser_Scanning_Confocal_M-scope_(Olympus_LEXT)&diff=159593Laser Scanning Confocal M-scope (Olympus LEXT)2022-01-27T13:52:34Z<p>Bosch t: /* Operating Procedures */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OlympusLEXT.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 4<br />
|email=bosch@ece.ucsb.edu<br />
|description = Scanning Laser Confocal Microscope<br />
|manufacturer = [http://www.olympus-ims.com/en/metrology/ols4000/ Olympus]<br />
|materials = <br />
|toolid=3<br />
}} <br />
= About =<br />
The LEXT OLS4000 3D Laser Measuring Microscope is designed for nanometer level imaging, 3D measurement and roughness measurement. Magnification ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above link to the manufacturer’s website.<br />
<br />
=== Technique & Capabilities ===<br />
[[File:Olypmus LEXT Example Profile Measurement.png|alt=Measurement of 5µm wide posts|thumb|205x205px|Example Height/Profile Measurement (click to enlarge)]]<br />
The LEXT allows you to take height measurements of features too small to reach with a physical Stylus needle, in a non-contact mode that is much faster than engaging an AFM tip. In addition, very large aspect-ratios can be measured - for example, 1mm depth x 50µm width. Confocal microscopy ensures that only surfaces that are in-focus will return a signal to the microscope detector. The LEXT sweeps the focus motor and captures a 2D scan of your sample at each focus step, taken with a blue laser (405 nm). After the scan, the height of each surface is calculated by the focus step which produced the highest laser intensity, and this is constructed into a 3D image by the OLS software.<br />
<br />
Because this is an optical method, films that are optically transparent to blue light and/or have transparent sloping sidewalls can produce non-physical measurements due to optical interference on the sample. In addition, features on the order of the laser wavelength can produce unreliable/non-physical data - for example, the data near (within ~500 nm) very steep slopes, or features ≤ 1.0 µm wide may not be reliable.<br />
<br />
Surfaces that are opaque to the laser wavelength work best, although measurements on rectangular transparent edges do work relatively well. Edges of steps where light does not reflect in an ideal manner often produce non-physical features, typically manifesting as trenches/spikes right next to the sidewall.<br />
<br />
Technically the height-resolution is specified as 10 nm (the height resolution of the focus motor), but in practice, noise and optical uncertainties worsen this spec.<br />
<br />
== Operating Procedures ==<br />
[[Olympus LEXT OLS4000 Confocal uScope - Quick Start|LEXT Quick Start]]<br />
<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=c8d43220-e3aa-42b6-a372-ae290113b2c4 <u>LEXT Laser Confocal M-Scope Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
<br />
=== Offline software ===<br />
[https://drive.google.com/drive/folders/1NsTb1UYDkTTvWU2AjfujuqYbKstos3W7?usp=sharing LEXT OLS4000 Offline Software]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)&diff=159585DSEIII (PlasmaTherm/Deep Silicon Etcher)2022-01-20T17:05:43Z<p>Bosch t: /* Recipes */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=DSEIII.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|phone= 805-893-3486<br />
|location=Bay 2<br />
|email=bosch@ece.ucsb.edu<br />
|description = Deep Silicon Etcher: Bosch MEMS Processes<br />
|manufacturer = Plasmatherm<br />
|materials = <br />
|toolid=63<br />
}} <br />
==About==<br />
<br />
The Si DRIE system is a Plasma-Therm DSEIII series system with a loadlock. The system has an Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) and LF (100kHz) supplies to independently control plasma density and ion energy in the system. This system is dedicated to deep silicon Bosch etching, although short O2 etches are also permitted. The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. <br />
<br />
The materials allowed to be exposed in the system are limited to Silicon, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, SiO<sub>X</sub>N<sub>Y</sub>, and polymer films such as photoresist, PMMA, and polyimide. Other materials can be placed in the chamber with staff approval. <br />
<br />
Helium back-side cooling is used to keep the sample cool during the etch. Temperature control is very important as the polymer passivation layer is chemically etched away by the fluorine gas at elevated temperatures, resulting in loss of profile control. <br />
<br />
The etch rate is dependent on the open area of silicon (macro-loading effect) with large open area samples etching slower than small open area samples. Features with a high aspect ratio will also etch slower than more open areas. This is known as RIE lag or the micro-loading effect. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
<br />
==Detailed Specifications==<br />
<br />
*3500 W ICP coil power at 2 MHz and 500 W substrate bias at 13.56 MHz plasma generators<br />
*C<sub>4</sub>F<sub>8</sub>, SF<sub>6</sub>, O<sub>2</sub>, Ar, N<sub>2</sub> gases available<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users must ensure thick photoresists or other substances do not contact the clamp, to prevent wafer stiction and breakage.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed materials: Silicon, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, SiO<sub>X</sub>N<sub>Y</sub>, Al, Al2O3, and polymer films such as photoresist, PMMA, and polyimide; CrystalBond wax for mounting to carrier wafer (ask staff before using oil).<br />
**Realized etch rates (including passivation steps) for Bosch process of >8 um / min. Selectivity to resist > 80:1 for low aspect ratio.<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
<br />
==Operation Procedures & Documentation==<br />
<br />
*{{file|DSEIII Operating Instructions.pdf|DSEIII Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
<br />
=== Preventing Wafer Breakage ===<br />
It is very important that your wafer does not stick to the top-side clamp in the chamber. The clamp will get hot during long etches, causing thick photoresists to soften and adhere to the clamp, resulting if wafer loss and breakage.<br />
<br />
'''Users must remove photoresist from the wafer edge''' to prevent this. We have photolithographic methods for performing this cleanly, or simple swabbing with EBR100 also works well. <br />
<br />
See this page for Edge-Bead Removal techniques: [[Photolithography - Manual Edge-Bead Removal Techniques|'''Manual Edge-Bead Removal Techniques''']] <br />
<br />
'''Remove at least 7mm around ALL of the outer edge of the 4-inch wafer. Do not try to save die by removing less, or you will lose the whole wafer and require the chamber to be vented.''' <br />
<br />
Pieces of wafers can be placed onto 4" silicon wafers, or mounted as long as material does not get on the clamp. It is common for through-silicon etches to use a carrier wafer, often bonded with wax on the [[Wafer Bonder (Logitech WBS7)|Logitech bonder]], and excess wax carefully removed to ensure not adhesion to the clamp. <br />
<br />
==Recipes==<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29 '''Plasma-Therm DSE-iii Recipes'''] - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.<br />
<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=55a26021-b299-41cc-a512-ae23010845aa <u>Plasmatherm DSE-iii Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_5_(AJA_ATC_2200-V)&diff=159584Sputter 5 (AJA ATC 2200-V)2022-01-14T19:51:24Z<p>Bosch t: /* Procedures */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter5.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description = 8 Gun Sputtering System<br />
|manufacturer = AJA ATC 2200-V<br />
|materials = <br />
|toolid=60<br />
}}<br />
<br />
==About==<br />
The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sputter guns are in-situ tiltable modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a "chimney" configuration with very narrow source to shutter gaps. Uniformity better than 2% is achieved for various sample heights. 4 DC and 1 RF power supplies allow for co-deposition of materials as well as the sputtering of a wide variety of materials. The system is recipe driven and computer controlled for reproducible results. <br />
<br />
The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo pump achieving < 5 E-8T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Flow rates are controlled with standard mass flow controllers. Gun power supplies include: 300W DC, 13.56 Mhz 300W RF, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. <br />
<br />
Up to 6" round wafer sizes can be accommodated in the system. Smaller substrates are clip mounted onto the carriers, while round wafers have drop-in pocket carriers or clips carriers. <br />
<br />
Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. Argon is used for the sputter gas, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. <br />
<br />
Samples can be heated to 800°C. <br />
<br />
== Procedures ==<br />
Procedures are similar to [[Sputter 3 (AJA ATC 2000-F)|Sputter #3]] and [[Sputter 4 (AJA ATC 2200-V)|Sputter #4]].<br />
<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=93633088-cab6-46eb-b200-ae1d010d04f1&start=0 <u>AJA Sputter System Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*Recipes > Vac. Dep. > '''<u>[[Sputtering Recipes#Sputter 5 .28AJA ATC 2200-V.29|Sputtering Recipes]]</u>''' [[Sputtering Recipes#Sputter 5 .28AJA ATC 2200-V.29|> '''<u>Sputter #5</u>''']]<br />
*See the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 '''Sputter #5 SignupMonkey Page'''] for a list of currently installed sputter targets.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_4_(AJA_ATC_2200-V)&diff=159583Sputter 4 (AJA ATC 2200-V)2022-01-14T19:50:58Z<p>Bosch t: /* Procedures */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter4.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description =Seven-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=21<br />
}} <br />
==About==<br />
The Seven-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. <br />
<br />
Substrates are clip mounted onto 4", 6" or a generic carrier. Up to 6" round wafer sizes can be accomodated in the system.<br />
<br />
2 DC sources and 1 RF sources allow for co-deposition of materials. Materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering.<br />
<br />
The deposition chamber is load-locked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo (capable of pumping O<sub>2</sub>) achieving < 5 E-8T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. <br />
<br />
Gun power supplies include: 300W DC, 13.56 Mhz 300W RF and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. <br />
<br />
Magnetic materials are restricted from this system, but can instead be deposited on Sputter 3 or 5. This is to accommodate superconducting materials.<br />
<br />
==Detailed Specifications==<br />
<br />
*7 target with DC or RF operation<br />
*< 5E-8T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*6" and 4" round sample holder<br />
*Gun Tilt and Sample height adjustment<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 800°C deposition temperature in O<sub>2</sub> environment<br />
*RF Biasing of sample during deposition or as a preclean<br />
*Automatic wafer loading and recipe driven process control.<br />
*Co-deposition of two materials: DC or RF<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, and other metal-oxide/nitrides possible<br />
*'''No magnetic materials'''<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21&B1=Show '''The Sputter #4 SignupMonkey Page'''] lists the currently installed sputter targets.<br />
<br />
==Procedures==<br />
''To Be Added''<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=93633088-cab6-46eb-b200-ae1d010d04f1&start=0 <u>AJA Sputter System Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
Wiki > Recipes > Sputtering Recipes > [[Sputtering Recipes#Sputter 4 .28AJA ATC 2200-V.29|'''<u>Sputter #4</u>''']]<br />
<br />
See the [[Vacuum Deposition Recipes|master deposition table]] to help determine which tool you need to use for a particular material.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_3_(AJA_ATC_2000-F)&diff=159582Sputter 3 (AJA ATC 2000-F)2022-01-14T19:48:21Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter3.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 3<br />
|email=bosch@ece.ucsb.edu<br />
|description = Six-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=20<br />
}}<br />
=About=<br />
The Six-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity is better than 2% over 90mm. <br />
<br />
2 DC sources and 2 RF sources allow for co-deposition of materials, including dedicated magnetic films Fe, Ni, and Co. <br />
<br />
Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. Argon is used for the sputter gas, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. <br />
<br />
The deposition chamber is loadlocked providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo (capable of pumping O<sub>2</sub>) achieving an ~ 4.0 E-8 T ultimate pressure. A VAT adaptive pressure control valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. <br />
<br />
Gun power supplies include: 500W DC, 13.56 Mhz 300W RF, and a 50W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 650°C. The system is recipe driven and computer controlled for reproducible results.<br />
<br />
=Detailed Specifications=<br />
<br />
*6 target with DC or RF operation<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF or DC<br />
*Co-deposition of up to four materials: 2 DC and 2 RF<br />
*Magnetic Material Deposition: Fe, Ni, Co<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, Al2O3 and other metal-oxide/nitrides possible<br />
*Low E-8T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*4" diameter sample holder<br />
*Gun Tilt, Sample height and rotation adjustments<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 650°C dep temperature<br />
*RF Biasing of sample during deposition or as a pre-deposition clean<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20&B1=Show '''The Sputter #3 SignupMonkey page'''] lists the currently installed sputter targets.<br />
<br />
=Documentation=<br />
<br />
*[[Media:Sputter-3 Operation Procedure Wiki.pdf|Operating Procedures]]<br />
<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=93633088-cab6-46eb-b200-ae1d010d04f1&start=0 <u>AJA Sputter System Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
=Materials Table=<br />
For the materials tables, please visit the page:<br />
<br />
Wiki > Recipes > Sputter Recipes > [[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|'''<u>Sputter 3 (ATC 2000-F)</u>''']]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tool_List&diff=159532Tool List2022-01-04T17:15:37Z<p>Bosch t: /* ICP-RIE */</p>
<hr />
<div>__NOTOC__<br />
=Lithography=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Photoresists and Lithography Chemicals=====<br />
<br />
*See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].<br />
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]<br />
<br />
=====Contact Aligners (Optical Exposure)=====<br />
<br />
*[[Suss Aligners (SUSS MJB-3)]]<br />
*[[Contact Aligner (SUSS MA-6)]]<br />
*[[DUV Flood Expose]]<br />
<br />
=====Direct-Write Lithography=====<br />
<br />
*[[E-Beam Lithography System (JEOL JBX-6300FS)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)|E-Beam Lithography (FEI Sirion Nabity v9)]]<br />
*[[Focused Ion-Beam Lithography (Raith Velion)]]<br />
*[[Maskless Aligner (Heidelberg MLA150)]]<br />
<br />
=====Other Patterning Systems=====<br />
<br />
*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]<br />
| width="400" |<br />
=====Steppers (Optical Exposure)=====<br />
<br />
*[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]<br />
*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]<br />
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]<br />
<br />
=====Thermal Processing for Photolithography=====<br />
<br />
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]<br />
*[[Ovens 1, 2 & 3 (Labline)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Oven 5 (Labline)]]<br />
*[[High Temp Oven (Blue M)]]<br />
*[[Vacuum Oven (YES)]]<br />
<br />
=====Lithography Support=====<br />
<br />
*The [https://wiki.nanotech.ucsb.edu/w/index.php?title=Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches<br />
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]<br />
|-<br />
|}<br />
<br />
=Vacuum Deposition=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Physical Vapor Deposition (PVD)=====<br />
<br />
*[[E-Beam 1 (Sharon)]]<br />
*[[E-Beam 2 (Custom)]]<br />
*[[E-Beam 3 (Temescal)]]<br />
*[[E-Beam 4 (CHA)]]<br />
*[[Thermal Evap 1]]<br />
*[[Thermal Evap 2 (Solder)]]<br />
<br />
=====Sputter Deposition=====<br />
<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[Sputter 4 (AJA ATC 2200-V)]]<br />
*[[Sputter 5 (AJA ATC 2200-V)]]<br />
*[[Ion Beam Deposition (Veeco NEXUS)]]<br />
<br />
| width="400" |<br />
=====Chemical Vapor Deposition (CVD)=====<br />
<br />
*[[PECVD 1 (PlasmaTherm 790)]]<br />
*[[PECVD 2 (Advanced Vacuum)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[Molecular Vapor Deposition]]<br />
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]<br />
<br />
|}<br />
<br />
=Dry Etch=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Reactive Ion Etching (RIE)=====<br />
<br />
*[[RIE 2 (MRC)]]<br />
*[[RIE 3 (MRC)]]<br />
*[[RIE 5 (PlasmaTherm)]]<br />
<br />
=====Plasma Etching and Cleaning=====<br />
<br />
*[[Plasma Clean (Gasonics 2000)]]<br />
*[[Plasma Clean (YES EcoClean)]]<br />
*[[Plasma Activation (EVG 810)]]<br />
*[[Ashers (Technics PEII)]]<br />
<br />
=====Etch Monitoring=====<br />
<br />
*[[Laser Etch Monitoring]] (Endpoint Detection)<br />
*Optical Emission Spectra<br />
*Residual Gas Analyzer (RGA)<br />
| width="400" |<br />
=====ICP-RIE=====<br />
<br />
*[[ICP Etch 1 (Panasonic E626I)]]<br />
*[[ICP Etch 2 (Panasonic E640)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[Oxford ICP Etcher (PlasmaPro 100 Cobra)]]<br />
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]<br />
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]<br />
<br />
=====Ion Milling and Reactive Ion Beam Etching=====<br />
<br />
*[[CAIBE (Oxford Ion Mill)]]<br />
<br />
=====Other Dry Etching=====<br />
<br />
*[[UV Ozone Reactor]]<br />
*[[XeF2 Etch (Xetch)|XeF<sub>2</sub> Etch (Xetch)]]<br />
*[[Vapor HF Etch]]<br />
<br />
|}<br />
<br />
=Wet Processing=<br />
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[Wet Benches]]<br />
**[[Solvent Cleaning Benches]]<br />
**[[Spin Coat Benches]]<br />
**[[Develop Benches]]<br />
**[[Toxic Corrosive Benches]]<br />
**[[HF/TMAH Processing Benches]]<br />
**[[Plating Bench]]<br />
| width="400" |<br />
*[[Gold Plating Bench]]<br />
*[[Critical Point Dryer]]<br />
*[[Spin Rinse Dryer (SemiTool)]]<br />
*[[Chemical-Mechanical Polisher (Logitech)]]<br />
*[[Mechanical Polisher (Allied)]]<br />
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]<br />
|-<br />
|}<br />
<br />
=Thermal Processing=<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]<br />
*[[Rapid Thermal Processor (SSI Solaris 150)]]<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace Wafer Bonding (Thermco)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]<br />
*[[Wafer Bonder (SUSS SB6-8E)]]<br />
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]<br />
| width="400" |<br />
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]<br />
**[[Ovens 1, 2 & 3 (Labline)]]<br />
**[[Oven 4 (Thermo-Fisher HeraTherm)]]<br />
**[[Oven 5 (Labline)]]<br />
**[[Vacuum Oven (YES)]]<br />
**[[High Temp Oven (Blue M)]]<br />
|<br />
|-<br />
|}<br />
<br />
=Packaging=<br />
<br />
*[[Dicing Saw (ADT)]]<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
*[[Vacuum Sealer]]<br />
<br />
=Inspection, Test and Characterization=<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Optical Microscopy=====<br />
<br />
*[[Microscopes|Optical Microscopes]]<br />
*[[Fluorescence Microscope (Olympus MX51)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Photo-emission & IR Microscope (QFI)|Photo-emission & Thermal IR Microscope (QFI)]]<br />
*[[Digital Microscope (Olympus DSX1000)|Digital Microscope #7 (Olympus DSX1000)]]<br />
<br />
=====Electron Microscopy=====<br />
<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Field Emission SEM 2 (JEOL 7600F)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
<br />
=====Topographical Metrology=====<br />
<br />
*[[Step Profilometer (KLA Tencor P-7)]]<br />
*[[Step Profilometer (Dektak 6M)]]<br />
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]<br />
*[[Surface Analysis (KLA/Tencor Surfscan)]]<br />
**''Sub-micron Particle Counter''<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
| width="400" |<br />
=====Thin-Film/Material Analysis=====<br />
<br />
======Thickness + Optical Constants======<br />
<br />
*[[Ellipsometer (Woollam)]]<br />
*[[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]<br />
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]<br />
*[[Optical Film Thickness (Nanometric)]]<br />
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]<br />
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]<br />
<br />
======Other Properties======<br />
<br />
*[[Film Stress (Tencor Flexus)]]<br />
*[[Photoluminescence PL Setup (Custom)]]<br />
<br />
======Electrical Analysis======<br />
<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Probe Station & Curve Tracer]]<br />
<br />
=====Other Tools=====<br />
<br />
*[[Goniometer (Rame-Hart A-100)|Goniometer (Ramé-Hart A-100)]]<br />
**''Surface hydrophobicity''<br />
|-<br />
|<br />
|<br />
|-<br />
|}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tool_List&diff=159531Tool List2022-01-04T17:14:32Z<p>Bosch t: /* ICP-RIE */</p>
<hr />
<div>__NOTOC__<br />
=Lithography=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Photoresists and Lithography Chemicals=====<br />
<br />
*See the [https://wiki.nanotech.ucsb.edu/w/index.php?title=Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Chemical Datasheets page].<br />
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]<br />
<br />
=====Contact Aligners (Optical Exposure)=====<br />
<br />
*[[Suss Aligners (SUSS MJB-3)]]<br />
*[[Contact Aligner (SUSS MA-6)]]<br />
*[[DUV Flood Expose]]<br />
<br />
=====Direct-Write Lithography=====<br />
<br />
*[[E-Beam Lithography System (JEOL JBX-6300FS)]]<br />
*[[Field Emission SEM 1 (FEI Sirion)|E-Beam Lithography (FEI Sirion Nabity v9)]]<br />
*[[Focused Ion-Beam Lithography (Raith Velion)]]<br />
*[[Maskless Aligner (Heidelberg MLA150)]]<br />
<br />
=====Other Patterning Systems=====<br />
<br />
*[[Holographic Lith/PL Setup (Custom)|Holographic Litho/PL Setup (Custom)]]<br />
| width="400" |<br />
=====Steppers (Optical Exposure)=====<br />
<br />
*[[Stepper 1 (GCA 6300)|Stepper 1 (GCA 6300, i-line)]]<br />
*[[Stepper 2 (AutoStep 200)|Stepper 2 (AutoStep 200, i-line)]]<br />
*[[Stepper 3 (ASML DUV)|Stepper 3 (ASML DUV, Deep-UV)]]<br />
<br />
=====Thermal Processing for Photolithography=====<br />
<br />
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all lab ovens]]<br />
*[[Ovens 1, 2 & 3 (Labline)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Oven 5 (Labline)]]<br />
*[[High Temp Oven (Blue M)]]<br />
*[[Vacuum Oven (YES)]]<br />
<br />
=====Lithography Support=====<br />
<br />
*The [https://wiki.nanotech.ucsb.edu/w/index.php?title=Wet_Benches#Spin_Coat_Benches Spinner Benches] have pre-set hotplates at various temperatures appropriate for common photoresist bakes.<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 POLOS spinners] on Develop and Solvent benches<br />
*[[Spin Rinse Dryer (SemiTool)|Spin/Rinse/Dryer]]<br />
|-<br />
|}<br />
<br />
=Vacuum Deposition=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Physical Vapor Deposition (PVD)=====<br />
<br />
*[[E-Beam 1 (Sharon)]]<br />
*[[E-Beam 2 (Custom)]]<br />
*[[E-Beam 3 (Temescal)]]<br />
*[[E-Beam 4 (CHA)]]<br />
*[[Thermal Evap 1]]<br />
*[[Thermal Evap 2 (Solder)]]<br />
<br />
=====Sputter Deposition=====<br />
<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[Sputter 4 (AJA ATC 2200-V)]]<br />
*[[Sputter 5 (AJA ATC 2200-V)]]<br />
*[[Ion Beam Deposition (Veeco NEXUS)]]<br />
<br />
| width="400" |<br />
=====Chemical Vapor Deposition (CVD)=====<br />
<br />
*[[PECVD 1 (PlasmaTherm 790)]]<br />
*[[PECVD 2 (Advanced Vacuum)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[Molecular Vapor Deposition]]<br />
*[[Atomic Layer Deposision (Oxford FlexAL)|Atomic Layer Deposition (Oxford FlexAL)]]<br />
<br />
|}<br />
<br />
=Dry Etch=<br />
<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Reactive Ion Etching (RIE)=====<br />
<br />
*[[RIE 2 (MRC)]]<br />
*[[RIE 3 (MRC)]]<br />
*[[RIE 5 (PlasmaTherm)]]<br />
<br />
=====Plasma Etching and Cleaning=====<br />
<br />
*[[Plasma Clean (Gasonics 2000)]]<br />
*[[Plasma Clean (YES EcoClean)]]<br />
*[[Plasma Activation (EVG 810)]]<br />
*[[Ashers (Technics PEII)]]<br />
<br />
=====Etch Monitoring=====<br />
<br />
*[[Laser Etch Monitoring]] (Endpoint Detection)<br />
*Optical Emission Spectra<br />
*Residual Gas Analyzer (RGA)<br />
| width="400" |<br />
=====ICP-RIE=====<br />
<br />
*[[ICP Etch 1 (Panasonic E626I)]]<br />
*[[ICP Etch 2 (Panasonic E640)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[Oxford ICP Etcher (PlasmaPro 100 Cobra 300)]]<br />
*[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|Plasma-Therm SLR: Fluorine ICP (PlasmaTherm/SLR Fluorine Etcher)]]<br />
*[[DSEIII (PlasmaTherm/Deep Silicon Etcher)|Plasma-Therm DSE-iii (PlasmaTherm/Deep Silicon Etcher)]]<br />
<br />
=====Ion Milling and Reactive Ion Beam Etching=====<br />
<br />
*[[CAIBE (Oxford Ion Mill)]]<br />
<br />
=====Other Dry Etching=====<br />
<br />
*[[UV Ozone Reactor]]<br />
*[[XeF2 Etch (Xetch)|XeF<sub>2</sub> Etch (Xetch)]]<br />
*[[Vapor HF Etch]]<br />
<br />
|}<br />
<br />
=Wet Processing=<br />
See the [[Chemical List|Chemical List page]] for stocked chemicals such as Developers, Etchants, Solvents etc.<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
*[[Wet Benches]]<br />
**[[Solvent Cleaning Benches]]<br />
**[[Spin Coat Benches]]<br />
**[[Develop Benches]]<br />
**[[Toxic Corrosive Benches]]<br />
**[[HF/TMAH Processing Benches]]<br />
**[[Plating Bench]]<br />
| width="400" |<br />
*[[Gold Plating Bench]]<br />
*[[Critical Point Dryer]]<br />
*[[Spin Rinse Dryer (SemiTool)]]<br />
*[[Chemical-Mechanical Polisher (Logitech)]]<br />
*[[Mechanical Polisher (Allied)]]<br />
*[[Automated Coat/Develop System (S-Cubed Flexi)|Auto. Coat/Develop (S-Cubed Flexi)]]<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Wet_Benches#Automated_Wet-processing_Spinners_.28POLOS.29 Auto. Wet-Processing Spinners (POLOS)]<br />
|-<br />
|}<br />
<br />
=Thermal Processing=<br />
{|<br />
|- valign="top"<br />
| width="400" |<br />
*[[Rapid Thermal Processor (AET RX6)|Rapid Thermal Annealer/Processor "RTA" (AET RX6)]]<br />
*[[Rapid Thermal Processor (SSI Solaris 150)]]<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace Wafer Bonding (Thermco)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Lindberg)]]<br />
*[[Wafer Bonder (SUSS SB6-8E)]]<br />
*[[Wafer Bonder (Logitech WBS7)|Wafer Bonder/Wax Mounting (Logitech WBS2)]]<br />
| width="400" |<br />
*[[Ovens - Overview of All Lab Ovens|Ovens - Overview of all Lab Ovens]]<br />
**[[Ovens 1, 2 & 3 (Labline)]]<br />
**[[Oven 4 (Thermo-Fisher HeraTherm)]]<br />
**[[Oven 5 (Labline)]]<br />
**[[Vacuum Oven (YES)]]<br />
**[[High Temp Oven (Blue M)]]<br />
|<br />
|-<br />
|}<br />
<br />
=Packaging=<br />
<br />
*[[Dicing Saw (ADT)]]<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
*[[Vacuum Sealer]]<br />
<br />
=Inspection, Test and Characterization=<br />
{|<br />
|- valign="top"<br />
| width="300" |<br />
=====Optical Microscopy=====<br />
<br />
*[[Microscopes|Optical Microscopes]]<br />
*[[Fluorescence Microscope (Olympus MX51)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Photo-emission & IR Microscope (QFI)|Photo-emission & Thermal IR Microscope (QFI)]]<br />
*[[Digital Microscope (Olympus DSX1000)|Digital Microscope #7 (Olympus DSX1000)]]<br />
<br />
=====Electron Microscopy=====<br />
<br />
*[[Field Emission SEM 1 (FEI Sirion)]]<br />
*[[Field Emission SEM 2 (JEOL 7600F)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
<br />
=====Topographical Metrology=====<br />
<br />
*[[Step Profilometer (KLA Tencor P-7)]]<br />
*[[Step Profilometer (Dektak 6M)]]<br />
*[[Atomic Force Microscope (Bruker ICON)|Atomic Force Microsope (Bruker ICON)]]<br />
*[[Surface Analysis (KLA/Tencor Surfscan)]]<br />
**''Sub-micron Particle Counter''<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
| width="400" |<br />
=====Thin-Film/Material Analysis=====<br />
<br />
======Thickness + Optical Constants======<br />
<br />
*[[Ellipsometer (Woollam)]]<br />
*[[Optical Film Thickness (Filmetrics)|Optical Film Thickness (Filmetrics F20)]]<br />
*[[Filmetrics F40-UV Microscope-Mounted|Optical Film Thickness (Microscope-Mounted Filmetrics F-40-UV)]]<br />
*[[Optical Film Thickness (Nanometric)]]<br />
*[[Optical Film Thickness & Wafer-Mapping (Filmetrics F50)]]<br />
*[[Optical Film Spectra + Optical Properties (Filmetrics F10-RT-UVX)|Reflection/Transmission Spectra & Optical Film Thickness (Filmetrics F10-RT-UVX)]]<br />
<br />
======Other Properties======<br />
<br />
*[[Film Stress (Tencor Flexus)]]<br />
*[[Photoluminescence PL Setup (Custom)]]<br />
<br />
======Electrical Analysis======<br />
<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Probe Station & Curve Tracer]]<br />
<br />
=====Other Tools=====<br />
<br />
*[[Goniometer (Rame-Hart A-100)|Goniometer (Ramé-Hart A-100)]]<br />
**''Surface hydrophobicity''<br />
|-<br />
|<br />
|<br />
|-<br />
|}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159530Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T17:13:17Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford_Cobra_300_SOP_v2021-12-14.pdf|Oxford PlasmaPro Operating Instructions|}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=de1bb5fd-628f-4e70-b820-ae13010ee80b <u>Oxford Cobra 300 Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Oxford_Cobra_300_SOP_v2021-12-14.pdf&diff=159529File:Oxford Cobra 300 SOP v2021-12-14.pdf2022-01-04T17:12:11Z<p>Bosch t: </p>
<hr />
<div></div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159528Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T17:00:25Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford Plasma Pro Cobra 300 Operating Instructions.docx|Oxford PlasmaPro Operating Instructions|}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=de1bb5fd-628f-4e70-b820-ae13010ee80b <u>Oxford Cobra 300 Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159527Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:42:58Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford Plasma Pro Cobra 300 Operating Instructions.docx|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=de1bb5fd-628f-4e70-b820-ae13010ee80b <u>Oxford Cobra 300 Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159525Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:36:05Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*Online Training Video:<br />
**[https://gauchocast.hosted.panopto.com/Panopto/Pages/Viewer.aspx?id=de1bb5fd-628f-4e70-b820-ae13010ee80b <u>Oxford Cobra 300 Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159524Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:22:47Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*Online Training Video:<br />
**[ <u>Oxford Cobra 300 Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159523Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:21:27Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*Online Training Video:<br />
**[G:\Shared drives\NanoFab Equipment Group\Nanofab Equip Standard Operating Procedures\3.0 Dry Etch\3.18 Oxford PlasmaPro 100 Cobra 300\Training Video\Oxford Plasma Pro 100 Cobra 300 Training Video 2.mp4 <u>Oxford Cobra 300 Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159522Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:16:48Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*Online Training Video:<br />
**["G:\Shared drives\NanoFab Equipment Group\Nanofab Equip Standard Operating Procedures\3.0 Dry Etch\3.18 Oxford PlasmaPro 100 Cobra 300\Training Video\Oxford Plasma Pro 100 Cobra 300 Training Video 2.mp4" <u>Oxford Cobra 300 Training</u>]<br />
**'''Important:''' ''This video is for reference only, and does not give you authorization to use the tool. You must be officially authorized by the supervisor before using this machine.''<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159521Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:12:24Z<p>Bosch t: </p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –150°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159520Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:11:23Z<p>Bosch t: /* Recipes */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –40°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Oxford_ICP_Etcher_(PlasmaPro_100_Cobra)&diff=159519Oxford ICP Etcher (PlasmaPro 100 Cobra)2022-01-04T16:09:29Z<p>Bosch t: /* Documentation */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OxfordPlasmaPro.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|location=Bay 2<br />
|description = ICP Etches for III-V/ALE<br />
|manufacturer = [https://www.oxinst.com Oxford Instruments]<br />
|materials = InP, GaAs, GaN, Silicon ALE<br />
|model = PlasmaPro 100 Cobra 300<br />
|toolid=<br />
}} <br />
==About==<br />
<br />
The Oxford PlasmaPro 100 Cobra 300 is intended for etching InP-based, GaAs-baased and GaN-based epitaxies, in addition to Atomic Layer Etching (ALE) processes.<br />
The system has a load lock, wide temperature range with rapid heating/cooling, Inductively Coupled Plasma (ICP) coil and a capactively coupled substrate HF (13.56MHz) <br />
The fixturing is configured for 4" diameter Si wafers and uses a clamp to hold the sample on the RF chuck. Small pieces may be placed on Silicon carrier wafers, with or without mounting adhesive. Helium back-side cooling is used to keep the sample cool during the etch, but pieces do heat up when placed on carriers. <br />
<br />
The in-situ laser monitor installed on this system allows for repeatable etches and endpoint detection via continuous optical monitoring of the wafer reflectivity in a user-determined location, through a porthole on the chamber. <br />
The system also has an ''in situ'' optical emission monitor for plasma spectroscopy, utilized for chamber clean endpoint detection.<br />
<br />
==Detailed Specifications==<br />
<br />
*Temperature Range: –40°C to +400°C<br />
*Gases Available: CH<sub>4</sub>, H<sub>2</sub>, Ar, Cl<sub>2</sub>, BCl<sub>3</sub>, SF<sub>6</sub>, SiCl<sub>4</sub>, O<sub>2</sub>, N<sub>2</sub><br />
*ICP Power (max): 3000 W<br />
*RF Power (max): 600 W<br />
*He-back-side cooling<br />
*100mm wafer held down with ceramic clamp., single-load<br />
**Users may place pieces onto carrier wafer with or without adhesive. Standard recipes use no adhesive.<br />
**Pieces must be >7mm from edge of carrier to avoid wafer-clamping mechanism.<br />
*Windows-based Cortex software control of process and wafer handling<br />
*Allowed Materials:<br />
**InP-based epitaxies - ''qualified and ready''<br />
**GaAs-baased epitaxies - ''discuss with staff''<br />
**GaN-based epitaxies - ''discuss with staff''<br />
**GaSb-based epitaxies - ''discuss with staff''<br />
**Atomic Layer Etching on select materials - ''discuss with staff''<br />
*Standard masking materials include:<br />
**SiO<sub>2</sub><br />
**Si<sub>3</sub>N<sub>4</sub><br />
**photoresist (at << 100°C).<br />
<br />
Other materials can be exposed to the chamber only with staff approval. <br />
<br />
*Laser monitoring with camera and etch simulation software: [[Laser Etch Monitoring|Intellemetrics LEP 500]]<br />
*Optical Emission Spectroscopy (Ocean Optics) for endpoint detection of chamber cleans & etches - integrated into Oxford software<br />
<br />
==Documentation==<br />
<br />
*{{file|Oxford PLasmaPro Operating Instructions.pdf|Oxford PlasmaPro Operating Instructions}}<br />
*[[Laser Etch Monitoring|Laser Etch Monitoring procedures]]<br />
*[["G:\Shared drives\NanoFab Equipment Group\Nanofab Equip Standard Operating Procedures\3.0 Dry Etch\3.18 Oxford PlasmaPro 100 Cobra 300\Training Video\Oxford Plasma Pro 100 Cobra 300 Training Video 2.mp4"|Training Video]]<br />
<br />
==Recipes==<br />
<br />
*'''[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford PlasmaPro Recipes]]''' - Recipes specific to this tool.<br />
*All [[Dry Etching Recipes]] - use this list to see other options for dry etching various materials.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tony_Bosch&diff=157982Tony Bosch2020-04-20T16:55:58Z<p>Bosch t: /* Tools */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Senior Equipment Engineer<br />
|room = 1109C<br />
|phone = (805) 839-3918x217 <br />
|email = bosch@ece.ucsb.edu<br />
}}<br />
= About =<br />
.<br />
<br />
.<br />
<br />
.<br />
<br />
=Tools=<br />
{{PAGENAME}} is the supervisor for the following tools. <br />
<br />
{|<br />
|- valign="top"<br />
|<br />
*[[Nano-Imprint (Nanonex NX2000)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Vacuum Oven (YES)]]<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[Sputter 4 (AJA ATC 2200-V)]]<br />
*[[Sputter 5 (AJA ATC 2200-V)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[Gold Plating Bench]]<br />
*[[ICP Etch 2 (Panasonic E640)]]<br />
||<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Linberg)]]<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
*[[Microscopes]]<br />
*[[Probe Station & Curve Tracer]]<br />
*[[Optical Film Thickness (Filmetrics)]]<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
* [[Fluorescence Microscope (Olympus MX51)]] <br />
|}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Optical_Film_Thickness_(Filmetrics)&diff=157981Optical Film Thickness (Filmetrics)2020-04-20T16:54:44Z<p>Bosch t: </p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Filmmetrics.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Ning Cao<br />
|phone=(805)839-3918x217<br />
|location=Bay 6<br />
|email=bosch@ece.ucsb.edu<br />
|description = Thin-Film Reflectometry<br />
|manufacturer = [http://www.filmetrics.com/ Filmetrics]<br />
|model = Filmetrics F20<br />
|materials = <br />
}} <br />
= About =<br />
This tool is for thickness and optical property measurements of films on substrates. The technique used is white light reflection. Data is taken with normal incidence reflection of white light (400 nm – 850 nm) from the surface. The data is modeled and the optical parameters are adjusted to give a best least-squared fit to the data. The accuracy of the technique will depend on the thickness of the film and the optical models used for the fitting of the data. For a more complete description go to [http://www.filmetrics.com/ Filmetrics].<br />
<br />
=Equipment Specifications=<br />
*400-850 nm reflection spectrum<br />
*150 A to 50 um thickness only measurement<br />
*1000 A to 10 um thickness, n, and k measurements<br />
*1 nm accuracy at 500 nm thickness<br />
*Manual wafer placement<br />
*Data can all be saved<br />
*Can model up to three layers</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tube_Furnace_(Tystar_8300)&diff=157980Tube Furnace (Tystar 8300)2020-04-20T16:48:50Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Tystar.jpg<br />
|type = Thermal Processing<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 4<br />
|email=bosch@ece.ucsb.edu<br />
|description = Tystar 8" 3-Tube Oxidation/Annealing System<br />
|manufacturer = Tystar Corporation<br />
|model = Tystar 8300<br />
|materials = <br />
|toolid=999<br />
}} <br />
= About =<br />
The three stack Tystar 8” furnace is used primarily for 3 processes. The processes are dedicated for specific tubes as follows:<br />
* '''Tube #1''': SOG curing & low-temp oxidation<br />
* '''Tubes #2 and #3''': Dry or wet oxidation of silicon (unprocessed, clean)<br />
* '''Tube #3''': General furnace annealing & oxidation, including processed material<br />
<br />
Each process tube can accomodate up to one hundred 8” wafers per cycle. We have boats for 2", 3", 4", 6", 8" and irregular shaped pieces. The maximum temperature is 1100°C for the system. Gases used are O<sub>2</sub>, Steam from DI-H<sub>2</sub>O, N<sub>2</sub>.<br />
<br />
=Process Information=<br />
<br />
Recipe Characterization Data, such as thermal oxidation times, can be found on the recipe page: <br />
* [[Thermal Processing Recipes|Thermal Processing Recipes: Tystar 8300]]<br />
Use the [http://cleanroom.byu.edu/OxideTimeCalc BYU] or [http://www.lelandstanfordjunior.com/thermaloxide.html Stanford Leland Jr.] Thermal Oxidation Calculators to determine the time and temperature that will be necessary for your process needs. You can "calibrate" your oxidations to the Stanford calculator by adjusting the ''Partial Pressure'' on the calculator to match your experimental data. <br />
<br />
Keep in mind that all process must be 30 minutes in length at a minimum. Processes less than 30 minutes will suffer from poor uniformity because the process tube will not have sufficient time to saturate with O<sub>2</sub> or DI-H<sub>2</sub>O.<br />
<br />
=Recipes=<br />
<br />
The following are the available recipes on each furnace tube:<br />
<br />
'''Tube 1:'''<br />
* SOG425.001 - ''Spin-On Glass Cure''<br />
* ALGAAS.001 - ''Oxidation of AlGaAs''<br />
'''Tube 2:'''<br />
* WET1050.002 - ''WetOx at 1050°C''<br />
* DRY1050.002 - ''DryOx at 1050°C''<br />
* WETVAR.002 - ''WetOx, variable temp.''<br />
* DRYVAR.002 - ''DryOx, variable temp.''<br />
'''Tube 3:'''<br />
* WET1050.003 - ''WetOx at 1050°C''<br />
* DRY1050.003 - ''DryOx at 1050°C''<br />
* WETVAR.003 - ''WetOx, variable temp.''<br />
* DRYVAR.003 - ''DryOx, variable temp.''<br />
* ANNEAL.003 - ''Anneal with variable time and temperature''<br />
<br />
=Useful Information=<br />
[[Media:TystarMechDrawWaferBoat.pdf|Tystar Wafer Boat Drawing - 4" Wafer with 0.5mm Slots]]<br />
<br />
=See Also=<br />
*[http://www.tystar.com/ Tystar] - Manufacturer of the tool<br />
*[http://cleanroom.byu.edu/OxideThickCalc Silicon Thermal Oxide Thickness Calculator (BYU)] - Use this on-line calculator to calculate times for silicon oxidation.<br />
*[http://www.lelandstanfordjunior.com/thermaloxide.html Advanced Silicon Thermal Oxide Thickness Calculator (Stanford Leland Jr.)] - Another thermal oxide calculator, with flexibility to vary ''partial pressure'' parameter to calibrate to your own process.<br />
<br />
=Operational Instructions=<br />
<br />
*[[media:Tystar Operational Procedure.pdf|Operating Instructions]]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tony_Bosch&diff=157979Tony Bosch2020-04-20T16:46:27Z<p>Bosch t: /* Tools */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Senior Equipment Engineer<br />
|room = 1109C<br />
|phone = (805) 839-3918x217 <br />
|email = bosch@ece.ucsb.edu<br />
}}<br />
= About =<br />
.<br />
<br />
.<br />
<br />
.<br />
<br />
=Tools=<br />
{{PAGENAME}} is the supervisor for the following tools. <br />
<br />
{|<br />
|- valign="top"<br />
|<br />
*[[Nano-Imprint (Nanonex NX2000)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Vacuum Oven (YES)]]<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[Sputter 4 (AJA ATC 2200-V)]]<br />
*[[Sputter 5 (AJA ATC 2200-V)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[Gold Plating Bench]]<br />
*[[ICP Etch 2 (Panasonic E640)]]<br />
||<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Linberg)]]<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
*[[Microscopes]]<br />
*[[Probe Station & Curve Tracer]]<br />
*[[Optical Film Thickness (Filmetrics)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
* [[Fluorescence Microscope (Olympus MX51)]] <br />
|}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tony_Bosch&diff=157978Tony Bosch2020-04-20T16:44:57Z<p>Bosch t: /* Tools */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Senior Equipment Engineer<br />
|room = 1109C<br />
|phone = (805) 839-3918x217 <br />
|email = bosch@ece.ucsb.edu<br />
}}<br />
= About =<br />
.<br />
<br />
.<br />
<br />
.<br />
<br />
=Tools=<br />
{{PAGENAME}} is the supervisor for the following tools. <br />
<br />
{|<br />
|- valign="top"<br />
|<br />
*[[Nano-Imprint (Nanonex NX2000)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Vacuum Oven (YES)]]<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[UV Ozone Reactor]]<br />
*[[Gold Plating Bench]]<br />
*[[ICP Etch 2 (Panasonic E640)]]<br />
||<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Linberg)]]<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
*[[Microscopes]]<br />
*[[Probe Station & Curve Tracer]]<br />
*[[Optical Film Thickness (Filmetrics)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
* [[Fluorescence Microscope (Olympus MX51)]] <br />
|}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tony_Bosch&diff=157977Tony Bosch2020-04-20T16:43:30Z<p>Bosch t: /* Tools */</p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Senior Equipment Engineer<br />
|room = 1109C<br />
|phone = (805) 839-3918x217 <br />
|email = bosch@ece.ucsb.edu<br />
}}<br />
= About =<br />
.<br />
<br />
.<br />
<br />
.<br />
<br />
=Tools=<br />
{{PAGENAME}} is the supervisor for the following tools. <br />
<br />
{|<br />
|- valign="top"<br />
|<br />
*[[Nano-Imprint (Nanonex NX2000)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Vacuum Oven (YES)]]<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[UV Ozone Reactor]]<br />
*[[Gold Plating Bench]]<br />
*[[Strip Annealer]]<br />
||<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Linberg)]]<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
*[[Microscopes]]<br />
*[[Probe Station & Curve Tracer]]<br />
*[[Optical Film Thickness (Filmetrics)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
* [[Fluorescence Microscope (Olympus MX51)]] <br />
|}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Tony_Bosch&diff=157976Tony Bosch2020-04-20T16:42:06Z<p>Bosch t: </p>
<hr />
<div>{{staff|{{PAGENAME}}<br />
|position = Senior Equipment Engineer<br />
|room = 1109C<br />
|phone = (805) 839-3918x217 <br />
|email = bosch@ece.ucsb.edu<br />
}}<br />
= About =<br />
.<br />
<br />
.<br />
<br />
.<br />
<br />
=Tools=<br />
{{PAGENAME}} is the supervisor for the following tools. <br />
<br />
{|<br />
|- valign="top"<br />
|<br />
*[[Nano-Imprint (Nanonex NX2000)]]<br />
*[[Oven 4 (Fisher)]]<br />
*[[Vacuum Oven (YES)]]<br />
*[[E-Beam 2 (Custom)]]<br />
*[[E-Beam 4 (CHA)]]<br />
*[[Sputter 3 (AJA ATC 2000-F)]]<br />
*[[ICP-PECVD (Unaxis VLR)]]<br />
*[[ICP-Etch (Unaxis VLR)]]<br />
*[[UV Ozone Reactor]]<br />
*[[Gold Plating Bench]]<br />
*[[Strip Annealer]]<br />
||<br />
*[[Tube Furnace (Tystar 8300)]]<br />
*[[Tube Furnace AlGaAs Oxidation (Linberg)]]<br />
*[[Flip-Chip Bonder (Finetech)]]<br />
*[[Microscopes]]<br />
*[[Probe Station & Curve Tracer]]<br />
*[[Optical Film Thickness (Filmetrics)]]<br />
*[[SEM Sample Coater (Hummer)]]<br />
*[[Resistivity Mapper (CDE RESMAP)]]<br />
*[[Laser Scanning Confocal M-scope (Olympus LEXT)]]<br />
*[[Deep UV Optical Microscope (Olympus)]]<br />
* [[Fluorescence Microscope (Olympus MX51)]] <br />
|}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Laser_Scanning_Confocal_M-scope_(Olympus_LEXT)&diff=157974Laser Scanning Confocal M-scope (Olympus LEXT)2020-04-20T16:34:07Z<p>Bosch t: /* Technique & Capabilities */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OlympusLEXT.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 4<br />
|email=bosch@ece.ucsb.edu<br />
|description = Scanning Laser Confocal Microscope<br />
|manufacturer = [http://www.olympus-ims.com/en/metrology/ols4000/ Olympus]<br />
|materials = <br />
|toolid=3<br />
}} <br />
= About =<br />
The LEXT OLS4000 3D Laser Measuring Microscope is designed for nanometer level imaging, 3D measurement and roughness measurement. Magnification ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above link to the manufacturer’s website.<br />
<br />
=== Technique & Capabilities ===<br />
[[File:Olypmus LEXT Example Profile Measurement.png|alt=Measurement of 5µm wide posts|thumb|205x205px|Example Height/Profile Measurement (click to enlarge)]]<br />
The LEXT allows you to take height measurements of features too small to reach with a physical Stylus needle, in a non-contact mode that is much faster than engaging an AFM tip. In addition, very large aspect-ratios can be measured - for example, 1mm depth x 50µm width. Confocal microscopy ensures that only surfaces that are in-focus will return a signal to the microscope detector. The LEXT sweeps the focus motor and captures a 2D scan of your sample at each focus step, taken with a blue laser (405 nm). After the scan, the height of each surface is calculated by the focus step which produced the highest laser intensity, and this is constructed into a 3D image by the OLS software.<br />
<br />
Because this is an optical method, films that are optically transparent to blue light and/or have transparent sloping sidewalls can produce non-physical measurements due to optical interference on the sample. In addition, features on the order of the laser wavelength can produce unreliable/non-physical data - for example, the data near (within ~500 nm) very steep slopes, or features ≤ 1.0 µm wide may not be reliable.<br />
<br />
Surfaces that are opaque to the laser wavelength work best, although measurements on rectangular transparent edges do work relatively well. Edges of steps where light does not reflect in an ideal manner often produce non-physical features, typically manifesting as trenches/spikes right next to the sidewall.<br />
<br />
Technically the height-resolution is specified as 10 nm (the height resolution of the focus motor), but in practice, noise and optical uncertainties worsen this spec.<br />
<br />
== Operating Procedures ==<br />
[[Olympus LEXT OLS4000 Confocal uScope - Quick Start|LEXT Quick Start]]<br />
<br />
=== Offline software ===<br />
[https://drive.google.com/drive/folders/1NsTb1UYDkTTvWU2AjfujuqYbKstos3W7?usp=sharing LEXT OLS4000 Offline Software]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Flip-Chip_Bonder_(Finetech)&diff=157973Flip-Chip Bonder (Finetech)2020-04-20T16:30:40Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=FinetechFlip.jpg<br />
|type = Packaging<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 3<br />
|email=bosch@ece.ucsb.edu<br />
|description = Finetech Flip Chip Bonder<br />
|manufacturer = [http://www.finetechusa.com/bonders/products/fineplacerr-lambda.html Finetech]<br />
|materials = <br />
|toolid=40<br />
}} <br />
= About =<br />
The Finetech Fineplacer Lambda tool is designed for flip-chip bonding of two parts with an alignment accuracy of about 1um. The system is a semiautomatic bonder with full computer control of the bonding parameters and an integrated side-camera system for observation during the bond. Sample sizes as small as 500um on a side to as large as 50mm on a side can be accommodated. Forces from as small as 0.3N to as large as 500N can be applied to the parts. Bonding temperatures up to 400C are possible. The system also has a formic acid module (reduced atmosphere environment) that is used to prevent oxide formation during heated indium bonding.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=ICP_Etch_2_(Panasonic_E626I)&diff=157972ICP Etch 2 (Panasonic E626I)2020-04-20T16:29:11Z<p>Bosch t: </p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=ICP1.jpg<br />
|type = Dry Etch<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x219<br />
|location=Bay 2<br />
|email=silva@ece.ucsb.edu<br />
|description = ICP Etch<br />
|manufacturer = Panasonic Factory Solutions <br />
|materials = <br />
|toolid=23<br />
}} <br />
= About =<br />
<br />
This is a single-chamber tool for etching of a variety of materials. The chamber is configured as an ICP etching tool with 1000 W ICP power, 500 W RF substrate power, and RT - 80°C operation with back-side He cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This chamber has Cl<sub>2</sub>, BCl<sub>3</sub>, CF<sub>4</sub>, CHF<sub>3</sub>, SF<sub>6</sub>, Ar, N<sub>2</sub>, and O<sub>2 </sub>for gas sources and can be used to etch a variety of materials from SiO<sub>2</sub> to metals to compound semiconductors. The chamber is evacuated with a 2000 lpm Osaka Vacuum magnetically levitated turbo pump, allowing for fast pump down. The system is also equipped with a red laser monitoring system from Intellemetrics for more precise etch stop control.<br />
<br />
= Detailed Specifications =<br />
<br />
*1000 W ICP source, 500 W RF Sample Bias Source in etching chamber <br />
*Room Temp. – 80°C sample temperature for etching. Default 15°C Chuck temperature. <br />
*Optimal Emission Monitoring <br />
*Etch pressure from 0.1 Pa to 5 Pa (0.75 mT - 37.5 mT) <br />
*Cl<sub>2</sub>, BCl<sub>3</sub>, (Ar or CHF<sub>3</sub>), (CF<sub>4</sub> or SF<sub>6</sub>), N<sub>2</sub>, and O<sub>2</sub> in etch chamber<br />
*O<sub>2</sub>, N<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>O Vapor for ashing chamber <br />
*Single 6” diameter wafer capable system <br />
*Pieces possible by mounting to 6” wafer<br />
*670nm laser endpoint detector with camera and simulation software- Intellemetrics<br />
<br />
=Documentation=<br />
*{{file|ICP-Etch-2-Operating-Manual.pdf|Operating Instruction Manual}}<br />
*{{file|Panasonic2.pdf|Training Notes}}<br />
*{{file|Gas-Change.pdf|Gas Change Instructions}}<br />
*{{file|manualwafertransfer.pdf|Manual Wafer Transfer Instructions}}<br />
<br />
= Recipes =<br />
* [https://wiki.nanotech.ucsb.edu/wiki/index.php/Dry_Etching_Recipes Dry Etching Recipes]<br />
** Table of all dry etching recipes, showing which tools can etch which materials etc.<br />
* [https://wiki.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29 ICP2 Recipes]<br />
** Starting point recipes for ICP2 specifically.</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_5_(AJA_ATC_2200-V)&diff=157971Sputter 5 (AJA ATC 2200-V)2020-04-20T16:24:28Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter5.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description = 8 Gun Sputtering System<br />
|manufacturer = AJA ATC 2200-V<br />
|materials = <br />
|toolid=<br />
}}<br />
<br />
== '''About''' ==<br />
The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sputter guns are in-situ tiltable modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a "chimney" configuration with very narrow source to shutter gaps. Uniformity better than 2% is achieved for various sample heights. 4 DC and 1 RF power supplies allow for co-deposition of materials as well as the sputtering of a wide variety of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo pump achieving < 5 E-8T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gas, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering.Substrates are clip mounted onto the carriers. Gun power supplies include: 300W DC, 13.56 Mhz 300W RF, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. <br />
<br />
===== Heading text =====</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_4_(AJA_ATC_2200-V)&diff=157970Sputter 4 (AJA ATC 2200-V)2020-04-20T16:20:55Z<p>Bosch t: /* Detailed Specifications */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter4.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description =Seven-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=21<br />
}} <br />
=About=<br />
The Seven-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is load-locked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo (capable of pumping O<sub>2</sub>) achieving < 5 E-8T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4", 6" or a generic carrier. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC, 13.56 Mhz 300W RF and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. Magnetic materials are restricted from this system, but can be sputter deposited either Sputter 3 or 5.<br />
<br />
=Detailed Specifications=<br />
<br />
*7 target with DC or RF operation<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF<br />
*Co-deposition of two materials: DC or RF<br />
*No magnetic materials<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, and other metal-oxide/nitrides possible<br />
*< 5E-8T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*6" and 4" round sample holder<br />
*Gun Tilt and Sample height adjustment<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 800°C deposition temperature in O<sub>2</sub> environment<br />
*RF Biasing of sample during deposition or as a preclean<br />
*Automatic wafer loading and recipe driven process control.<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21&B1=Show '''The Sputter #4 SignupMonkey Page'''] lists the currently installed sputter targets.<br />
<br />
=Documentation=<br />
<br />
==Procedures==<br />
<br />
==Data==<br />
[[Sputtering Recipes]]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_4_(AJA_ATC_2200-V)&diff=157968Sputter 4 (AJA ATC 2200-V)2020-04-20T16:14:59Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter4.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description =Seven-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=21<br />
}} <br />
=About=<br />
The Seven-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is load-locked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo (capable of pumping O<sub>2</sub>) achieving < 5 E-8T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4", 6" or a generic carrier. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC, 13.56 Mhz 300W RF and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. Magnetic materials are restricted from this system, but can be sputter deposited either Sputter 3 or 5.<br />
<br />
=Detailed Specifications=<br />
<br />
*7 target with DC or RF operation<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF<br />
*Co-deposition of two materials: DC or RF<br />
*No magnetic materials<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, and other metal-oxide/nitrides possible<br />
*< E-7 T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*6" round sample holder<br />
*Gun Tilt and Sample height adjustment<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 800°C dep temperature in O<sub>2</sub> environment<br />
*RF Biasing of sample during deposition or as a preclean<br />
*Automatic wafer loading and recipe driven process control.<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21&B1=Show '''The Sputter #4 SignupMonkey Page'''] lists the currently installed sputter targets.<br />
<br />
=Documentation=<br />
<br />
==Procedures==<br />
<br />
==Data==<br />
[[Sputtering Recipes]]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_3_(AJA_ATC_2000-F)&diff=157967Sputter 3 (AJA ATC 2000-F)2020-04-20T16:05:51Z<p>Bosch t: /* Detailed Specifications */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter3.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 3<br />
|email=bosch@ece.ucsb.edu<br />
|description = Six-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=20<br />
}}<br />
=About=<br />
The Six-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% over 90mm. 2 DC sources and 2 RF sources allow for co-deposition of materials, including dedicated magnetic films Fe, Ni, and Co. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo (capable of pumping O<sub>2</sub>) achieving an ~ 4.0 E-8 T ultimate pressure. A VAT adaptive pressure control valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gas, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 500W DC, 13.56 Mhz 300W RF, and a 50W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 650°C. The system is recipe driven and computer controlled for reproducible results.<br />
<br />
=Detailed Specifications=<br />
*6 target with DC or RF operation<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF or DC<br />
*Co-deposition of up to four materials: 2 DC and 2 RF<br />
*Magnetic Material Deposition: Fe, Ni, Co<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, Al2O3 and other metal-oxide/nitrides possible<br />
*Low E-8T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*4" diameter sample holder<br />
*Gun Tilt, Sample height and rotation adjustments<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 650°C dep temperature<br />
*RF Biasing of sample during deposition or as a pre-deposition clean<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20&B1=Show '''The Sputter #3 SignupMonkey page'''] lists the currently installed sputter targets.<br />
<br />
=Documentation=<br />
*[[media:Sputter-3 Operation Procedure Wiki.pdf|Operating Procedures]]<br />
<br />
= Materials Table =<br />
For the materials tables, please visit the [[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]].</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_3_(AJA_ATC_2000-F)&diff=157966Sputter 3 (AJA ATC 2000-F)2020-04-20T16:03:51Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter3.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 3<br />
|email=bosch@ece.ucsb.edu<br />
|description = Six-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=20<br />
}}<br />
=About=<br />
The Six-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% over 90mm. 2 DC sources and 2 RF sources allow for co-deposition of materials, including dedicated magnetic films Fe, Ni, and Co. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1200 l/s turbo (capable of pumping O<sub>2</sub>) achieving an ~ 4.0 E-8 T ultimate pressure. A VAT adaptive pressure control valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gas, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 500W DC, 13.56 Mhz 300W RF, and a 50W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 650°C. The system is recipe driven and computer controlled for reproducible results.<br />
<br />
=Detailed Specifications=<br />
*6 target with DC or RF operation<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF or DC<br />
*Co-deposition of up to four materials: 2 DC and 2 RF<br />
*Magnetic Material Deposition: Fe, Ni, Co<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, Al2O3 and other metal-oxide/nitrides possible<br />
*Upper E-8 T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*4" diameter sample holder<br />
*Gun Tilt, Sample height and rotation adjustments<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 800°C dep temperature<br />
*RF Biasing of sample during deposition or as a pre-deposition clean<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20&B1=Show '''The Sputter #3 SignupMonkey page'''] lists the currently installed sputter targets.<br />
<br />
=Documentation=<br />
*[[media:Sputter-3 Operation Procedure Wiki.pdf|Operating Procedures]]<br />
<br />
= Materials Table =<br />
For the materials tables, please visit the [[Sputtering_Recipes#Sputter_3_.28AJA_ATC_2000-F.29|Sputter 3<br>(ATC 2000-F)]].</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=ICP-PECVD_(Unaxis_VLR)&diff=157965ICP-PECVD (Unaxis VLR)2020-04-20T15:57:19Z<p>Bosch t: /* Detailed Specifications */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=UnaxisPECVD.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 1<br />
|email=bosch@ece.ucsb.edu<br />
|description = High Density ICP PECVD<br />
|manufacturer = Unaxis<br />
|materials = <br />
|toolid=17<br />
}} <br />
=About=<br />
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.<br />
<br />
===Cluster Configuration===<br />
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.<br />
<br />
*'''PM3''': ICP-PECVD Deposition (this page)<br />
*'''PM1''': [[ICP-Etch (Unaxis VLR)|ICP Etch (Unaxis VLR)]]<br />
<br />
=Detailed Specifications=<br />
<br />
*1000W ICP source, 600W RF Sample Bias Power Supply<br />
*100 - 350°C sample temperature<br />
*100% SiD<sub>4</sub>, Ar, N<sub>2</sub>, O<sub>2</sub><br />
*Multiple 4” diameter wafer capable system<br />
*Pieces possible by mounting or placing on 4 ” wafer<br />
<br />
=Documentation=<br />
<br />
*Operating Instructions<br />
*[[Wafer Coating Process Traveler]]<br />
*[[Wafer Scanning process Traveler]]<br />
<br />
== Recipes ==<br />
You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=ICP-PECVD_(Unaxis_VLR)&diff=157964ICP-PECVD (Unaxis VLR)2020-04-20T15:56:48Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=UnaxisPECVD.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 1<br />
|email=bosch@ece.ucsb.edu<br />
|description = High Density ICP PECVD<br />
|manufacturer = Unaxis<br />
|materials = <br />
|toolid=17<br />
}} <br />
=About=<br />
This system is configured as an ICP PECVD deposition tool with 1000 W ICP power, 600 W RF substrate power, and 100°C-350°C operation. This chamber has 100% SiD<sub>4,</sub> N<sub>2</sub>, O<sub>2</sub>, and Ar for gas sources. The high density PECVD produces a more dense, higher quality SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>, as compared with conventional PECVD. With the high density plasma, deposition of high quality films can be deposited as low as 100°C for processes requiring lower temperatures. Stress compensation for silicon nitride is characterized.<br />
<br />
===Cluster Configuration===<br />
A Deposition and Etch chamber are both attached to the same loadlock, allowing etching and deposition without breaking vacuum. Each chamber can be scheduled separately on SignupMonkey.<br />
<br />
*'''PM3''': ICP-PECVD Deposition (this page)<br />
*'''PM1''': [[ICP-Etch (Unaxis VLR)|ICP Etch (Unaxis VLR)]]<br />
<br />
=Detailed Specifications=<br />
<br />
*1000W ICP source, 600W RF Sample Bias Power Supply<br />
*50 - 350°C sample temperature<br />
*100% SiH<sub>4</sub>, Ar, N<sub>2</sub>, O<sub>2</sub><br />
*Multiple 4” diameter wafer capable system<br />
*Pieces possible by mounting or placing on 4 ” wafer<br />
<br />
=Documentation=<br />
<br />
*Operating Instructions<br />
*[[Wafer Coating Process Traveler]]<br />
*[[Wafer Scanning process Traveler]]<br />
<br />
== Recipes ==<br />
You can find recipes for this tool on the Wiki > Recipes > [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#ICP-PECVD_.28Unaxis_VLR.29 PECVD Recipes page]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Automated_Coat/Develop_System_(S-Cubed_Flexi)&diff=157134Automated Coat/Develop System (S-Cubed Flexi)2020-02-24T19:36:46Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=TBD.jpg<br />
|super= Tony Bosch<br />
|location=Bay 7<br />
|description = Automatic Coat/Bake/Develop<br />
|manufacturer = [https://www.s-cubed.com S-Cubed]<br />
|model = Flexi (Custom)<br />
|type = Wet Processing<br />
|recipe = Lithography<br />
|materials =<br />
|toolid=67<br />
}}<br />
'''THIS TOOL IS ONLY FOR STAFF USE AT THIS TIME.'''<br />
<br />
=About=<br />
<br />
The S3 is a Coater/Developer system that has 4 hotplates each with independent temperature control and a chill plate. A central robot picks your wafer/s from a cassette, processes them and returns them to the cassette. The system is recipe driven with a high degree of process control and minimal backside contamination. At this time only full size substrates are allowed on this system. The S3 Coater is still in process development and not open for general use.<br />
<br />
=Detailed Specifications=<br />
<br />
*Wafer Size: 100mm (150mm possible but not set up)<br />
*PR Coating Properties:<br />
**Uniformity < 1.0%<br />
**< 100 particles on 100mm wafer<br />
*Photoresists/Underlayers Available:<br />
**UV6-0.8<br />
**DS-K101-304<br />
**PMMA<br />
**PMGI SF11<br />
**PMGI SF5<br />
*Solvents Available:<br />
**EBR100<br />
*Developers Available:<br />
**AZ 300 MiF<br />
<br />
=Process Information=<br />
<br />
*Recipe Page for S-Cubed Coater: [[Lithography Recipes#Automated%20Coat.2FDevelop%20System%20Recipes%20.28S-Cubed%20Flexi.29|Lithography Recipes > Automated Coat/Develop System Recipes (S-Cubed Flexi]])<br />
*See the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Photolith. Chemicals page] for info on the installed resists.<br />
<br />
=Operating Procedures=<br />
<br />
*''To Be Added''</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Automated_Coat/Develop_System_(S-Cubed_Flexi)&diff=157133Automated Coat/Develop System (S-Cubed Flexi)2020-02-24T19:36:14Z<p>Bosch t: /* About */</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=TBD.jpg<br />
|super= Tony Bosch<br />
|location=Bay 7<br />
|description = Automatic Coat/Bake/Develop<br />
|manufacturer = [https://www.s-cubed.com S-Cubed]<br />
|model = Flexi (Custom)<br />
|type = Wet Processing<br />
|recipe = Lithography<br />
|materials =<br />
|toolid=67<br />
}}<br />
'''THIS TOOL IS ONLY FOR STAFF USE AT THIS TIME.'''<br />
<br />
=About=<br />
<br />
The S3 is a Coater/Developer system that has 4 hotplate each with independent temperature control and a chill plate. A central robot picks your wafer/s from a cassette, processes them and returns them to the cassette. The system is recipe driven with a high degree of process control and minimal backside contamination. At this time only full size substrates are allowed on this system. The S3 Coater is still in process development and not open for general use.<br />
<br />
=Detailed Specifications=<br />
<br />
*Wafer Size: 100mm (150mm possible but not set up)<br />
*PR Coating Properties:<br />
**Uniformity < 1.0%<br />
**< 100 particles on 100mm wafer<br />
*Photoresists/Underlayers Available:<br />
**UV6-0.8<br />
**DS-K101-304<br />
**PMMA<br />
**PMGI SF11<br />
**PMGI SF5<br />
*Solvents Available:<br />
**EBR100<br />
*Developers Available:<br />
**AZ 300 MiF<br />
<br />
=Process Information=<br />
<br />
*Recipe Page for S-Cubed Coater: [[Lithography Recipes#Automated%20Coat.2FDevelop%20System%20Recipes%20.28S-Cubed%20Flexi.29|Lithography Recipes > Automated Coat/Develop System Recipes (S-Cubed Flexi]])<br />
*See the [https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Chemicals_Stocked_.2B_Datasheets Photolith. Chemicals page] for info on the installed resists.<br />
<br />
=Operating Procedures=<br />
<br />
*''To Be Added''</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:TBD.jpg&diff=157132File:TBD.jpg2020-02-24T19:23:54Z<p>Bosch t: </p>
<hr />
<div></div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_4_(AJA_ATC_2200-V)&diff=156805Sputter 4 (AJA ATC 2200-V)2019-09-19T15:46:41Z<p>Bosch t: /* About */ Updated Description.</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter4.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description =Seven-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=21<br />
}} <br />
=About=<br />
The Seven-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is load-locked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s magnetically levitated turbo (capable of pumping O<sub>2</sub>) achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. Magnetic materials are restricted from this system, but can be sputter deposited either Sputter 3 or 5.<br />
<br />
=Detailed Specifications=<br />
<br />
*7 target with DC or RF operation<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF<br />
*Co-deposition of two materials: DC or RF<br />
*No magnetic materials<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, and other metal-oxide/nitrides possible<br />
*< E-7 T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*6" round sample holder<br />
*Gun Tilt and Sample height adjustment<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 800°C dep temperature in O<sub>2</sub> environment<br />
*RF Biasing of sample during deposition or as a preclean<br />
*Automatic wafer loading and recipe driven process control.<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21&B1=Show '''The Sputter #4 SignupMonkey Page'''] lists the currently installed sputter targets.<br />
<br />
=Documentation=<br />
<br />
==Procedures==<br />
<br />
==Data==<br />
[[Sputtering Recipes]]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_4_(AJA_ATC_2200-V)&diff=156804Sputter 4 (AJA ATC 2200-V)2019-09-19T15:43:16Z<p>Bosch t: /* Detailed Specifications */ Updated description</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=Sputter4.jpg<br />
|type = Vacuum Deposition <br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description =Seven-Target DC/RF Magnetron Sputtering System<br />
|manufacturer = [http://www.ajaint.com/ AJA]<br />
|materials = <br />
|toolid=21<br />
}} <br />
=About=<br />
The Seven-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s magnetically levitated turbo (capable of pumping O<sub>2</sub>) achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon and Xenon are used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 100W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 700°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" square wafer sizes can be accomodated in the system. Magnetic materials are restricted from this system, but can be sputter deposited in the other six-target AJA tool.<br />
<br />
=Detailed Specifications=<br />
<br />
*7 target with DC or RF operation<br />
*Reactive sputtering with N<sub>2</sub> or O<sub>2</sub> using RF<br />
*Co-deposition of two materials: DC or RF<br />
*No magnetic materials<br />
*SiO<sub>2</sub>, SiN, ITO, AlN, and other metal-oxide/nitrides possible<br />
*< E-7 T ultimate pressure (3 mT typical operating pressure), load-locked chamber<br />
*6" round sample holder<br />
*Gun Tilt and Sample height adjustment<br />
*Deposition uniformity is ~ 1-2% over 4 " diameter<br />
*Up to 800°C dep temperature in O<sub>2</sub> environment<br />
*RF Biasing of sample during deposition or as a preclean<br />
*Automatic wafer loading and recipe driven process control.<br />
*[https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21&B1=Show '''The Sputter #4 SignupMonkey Page'''] lists the currently installed sputter targets.<br />
<br />
=Documentation=<br />
<br />
==Procedures==<br />
<br />
==Data==<br />
[[Sputtering Recipes]]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Laser_Scanning_Confocal_M-scope_(Olympus_LEXT)&diff=155168Laser Scanning Confocal M-scope (Olympus LEXT)2018-05-30T22:16:54Z<p>Bosch t: /* Offline software: */ Created link to software on my google drive</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OlympusLEXT.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 4<br />
|email=bosch@ece.ucsb.edu<br />
|description = Scanning Laser Confocal Microscope<br />
|manufacturer = [http://www.olympus-ims.com/en/metrology/ols4000/ Olympus]<br />
|materials = <br />
|toolid=3<br />
}} <br />
= About =<br />
The LEXT OLS4000 3D Laser Measuring Microscope is designed for nanometer level imaging, 3D measurement and roughness measurement. Magnification ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above link to the manufacturer’s website.<br />
<br />
=== Offline software: ===<br />
[https://drive.google.com/drive/folders/1NsTb1UYDkTTvWU2AjfujuqYbKstos3W7?usp=sharing LEXT OLS4000 Offline Software]</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Laser_Scanning_Confocal_M-scope_(Olympus_LEXT)&diff=155167Laser Scanning Confocal M-scope (Olympus LEXT)2018-05-30T22:08:19Z<p>Bosch t: Adding Link to offline software for LEXT</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OlympusLEXT.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 4<br />
|email=bosch@ece.ucsb.edu<br />
|description = Scanning Laser Confocal Microscope<br />
|manufacturer = [http://www.olympus-ims.com/en/metrology/ols4000/ Olympus]<br />
|materials = <br />
|toolid=3<br />
}} <br />
= About =<br />
The LEXT OLS4000 3D Laser Measuring Microscope is designed for nanometer level imaging, 3D measurement and roughness measurement. Magnification ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above link to the manufacturer’s website.<br />
<br />
=== Offline software: ===<br />
[[LEXT OLS4000 Install Instructions]]<br />
<br />
LEXT OLS4000 Offline Software</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Laser_Scanning_Confocal_M-scope_(Olympus_LEXT)&diff=155166Laser Scanning Confocal M-scope (Olympus LEXT)2018-05-30T16:14:24Z<p>Bosch t: I wanted to add the offline software so users can download it easily but was unsuccessful.</p>
<hr />
<div>{{tool|{{PAGENAME}}<br />
|picture=OlympusLEXT.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Tony Bosch<br />
|phone=(805)839-3918x217<br />
|location=Bay 4<br />
|email=bosch@ece.ucsb.edu<br />
|description = Scanning Laser Confocal Microscope<br />
|manufacturer = [http://www.olympus-ims.com/en/metrology/ols4000/ Olympus]<br />
|materials = <br />
|toolid=3<br />
}} <br />
= About =<br />
The LEXT OLS4000 3D Laser Measuring Microscope is designed for nanometer level imaging, 3D measurement and roughness measurement. Magnification ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above link to the manufacturer’s website.<br />
<br />
Offline software:</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_5_(AJA_ATC_2200-V)&diff=155120Sputter 5 (AJA ATC 2200-V)2018-05-02T21:33:53Z<p>Bosch t: Updating the description since it was copied from sputter 4.</p>
<hr />
<div>== '''About''' ==<br />
The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sputter guns are in-situ tiltable modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a "chimney" configuration with very narrow source to shutter gaps. Uniformity better than 2% is achieved for various sample heights. 4 DC and 1 RF power supplies allow for co-deposition of materials as well as the sputtering of a wide variety of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s turbo pump achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Flow rates are controlled with standard mass flow controllers. Argon is used for the sputter gas, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering.Substrates are clip mounted onto the carriers. Gun power supplies include: 300W DC, 13.56 Mhz 300W RF, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. <br />
<br />
===== Heading text =====<br />
<br />
{{tool|{{PAGENAME}}<br />
|picture=Sputter5.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description = 8 Gun Sputtering System<br />
|manufacturer = AJA ATC 2200-V<br />
|materials = <br />
|toolid=<br />
}}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_5_(AJA_ATC_2200-V)&diff=155087Sputter 5 (AJA ATC 2200-V)2018-05-01T21:34:04Z<p>Bosch t: </p>
<hr />
<div>== '''About''' ==<br />
The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sputter guns are in-situ tiltable modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a "chimney" configuration with very narrow source to shutter gaps. Uniformity better than 2% is achieved for various sample heights. 4 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s turbo pump (capable of pumping O<sub>2</sub>) achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto the carriers. Flow rates are controlled with standard mass flow controllers. Argon and Xenon are used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. <br />
<br />
===== Heading text =====<br />
<br />
{{tool|{{PAGENAME}}<br />
|picture=Sputter5.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description = 8 Gun Sputtering System<br />
|manufacturer = AJA ATC 2200-V<br />
|materials = <br />
|toolid=<br />
}}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_5_(AJA_ATC_2200-V)&diff=155086Sputter 5 (AJA ATC 2200-V)2018-05-01T21:29:51Z<p>Bosch t: Rearranging layout</p>
<hr />
<div>== '''About''' ==<br />
The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sputter guns are in-situ tiltable modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a "chimney" configuration with very narrow source to shutter gaps. Uniformity better than 2% is achieved for various sample heights. 4 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s turbo pump (capable of pumping O<sub>2</sub>) achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto the carriers. Flow rates are controlled with standard mass flow controllers. Argon and Xenon are used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 150W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 800°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" round wafer sizes can be accomodated in the system. <br />
<br />
===== Heading text =====<br />
<br />
{{tool|{{PAGENAME}}<br />
|picture=Sputter5.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = AJA ATC 2200-V<br />
|materials = <br />
|toolid=<br />
}}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_5_(AJA_ATC_2200-V)&diff=155085Sputter 5 (AJA ATC 2200-V)2018-05-01T21:20:19Z<p>Bosch t: /* Heading text */ Updating Sputter 5 Info</p>
<hr />
<div>== <br />
=== Heading text ===<br />
<br />
== '''About''' ==<br />
<br />
===== Heading text =====<br />
The Eight-Target DC/RF Sputtering System, built by AJA International uses planar magnetron sources. The sources are contained in tiltable sputter gun modules that allow for maintaining uniformity control at various sample heights. Cross contamination between sources is minimized by using a chimney configuration with very narrow source shutter gaps. Uniformity better than 2% is achieved for various sample heights. 2 DC sources and 1 RF sources allow for co-deposition of materials. Other materials, such as ITO, Si, Al, Zr, etc. can be reactively RF sputtered in an O<sub>2</sub> or N<sub>2</sub> environment to produce metal-oxides or nitrides. The deposition chamber is loadlocked, with automatic wafer transfer, providing for fast substrate transfer and consistent, low base pressure. Venting and evacuation are automated with a 1000 l/s magnetically levitated turbo (capable of pumping O<sub>2</sub>) achieving < 1 E-7 T ultimate pressure. A VAT gate valve is used for process pressure control independent of gas flow. Substrates are clip mounted onto 4 inch carriers. Flow rates are controlled with standard mass flow controllers. Argon and Xenon are used for the sputter gases, with N<sub>2</sub> and O<sub>2</sub> used for reactive sputtering. Gun power supplies include: 300W DC magnetron drivers, 13.56 Mhz 300W RF supplies, and a 100W substrate RF supply for in-situ substrate biasing and pre-cleaning. Samples can be heated to 700°C. The system is recipe driven and computer controlled for reproducible results. Up to 6" square wafer sizes can be accomodated in the system. Magnetic materials are restricted from this system, but can be sputter deposited in the other six-target AJA tool. ====<br />
==<br />
{{tool|{{PAGENAME}}<br />
|picture=Sputter5.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = AJA ATC 2200-V<br />
|materials = <br />
|toolid=<br />
}}</div>Bosch thttps://wiki.nanofab.ucsb.edu/w/index.php?title=Sputter_5_(AJA_ATC_2200-V)&diff=155084Sputter 5 (AJA ATC 2200-V)2018-05-01T21:18:41Z<p>Bosch t: /* Heading text */ Creating a new page for sputter 5</p>
<hr />
<div>== <br />
=== Heading text ===<br />
<br />
About <br />
===== Heading text =====<br />
====<br />
==<br />
{{tool|{{PAGENAME}}<br />
|picture=Sputter5.jpg<br />
|type = Vacuum Deposition<br />
|super= Tony Bosch<br />
|location=Bay 3<br />
|description = ?<br />
|manufacturer = AJA ATC 2200-V<br />
|materials = <br />
|toolid=<br />
}}</div>Bosch t