https://wiki.nanofab.ucsb.edu/w/api.php?action=feedcontributions&user=Biljana&feedformat=atomUCSB Nanofab Wiki - User contributions [en]2024-03-19T11:43:19ZUser contributionsMediaWiki 1.35.13https://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161824Surface Analysis (KLA/Tencor Surfscan)2024-02-03T01:02:15Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a2/SURFSCAN_6200_122123_for_8inch_wafers.pdf Surfscan 6200 8inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/1a/SURFSCAN_6200_122023_for_6inch_wafers.pdf Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/9/9f/SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161823Surface Analysis (KLA/Tencor Surfscan)2024-02-03T01:01:36Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122123_for_8inch_wafers.pdf Surfscan 6200 8inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/1a/SURFSCAN_6200_122023_for_6inch_wafers.pdf Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/9/9f/SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161822Surface Analysis (KLA/Tencor Surfscan)2024-02-03T01:00:47Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122123_for_8inch_wafers.pdf Surfscan 6200 8inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122023_for_6inch_wafers.pdf Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/9/9f/SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161821Surface Analysis (KLA/Tencor Surfscan)2024-02-03T00:59:52Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122123_for_8inch_wafers.pdf Surfscan 6200 8inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122023_for_6inch_wafers.pdf Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161820Surface Analysis (KLA/Tencor Surfscan)2024-02-03T00:59:17Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122123_for_8inch_wafers.pdf Surfscan 6200 8inch wafers] *<br />
*[ Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161819Surface Analysis (KLA/Tencor Surfscan)2024-02-03T00:58:40Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[ Surfscan 6200 8inch wafers] *<br />
*[ Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/wiki/File:SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161818Surface Analysis (KLA/Tencor Surfscan)2024-02-03T00:58:00Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[ Surfscan 6200 8inch wafers] *<br />
*[ Surfscan 6200 6inch wafers] *<br />
*[ Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161817Surface Analysis (KLA/Tencor Surfscan)2024-02-03T00:57:36Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[ Surfscan 6200 8inch wafers] *<br />
*[ Surfscan 6200 6inch wafers] *<br />
*[ Surfscan 6200 4inch wafers] *<br />
*[ https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161816Surface Analysis (KLA/Tencor Surfscan)2024-02-03T00:56:42Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[ Surfscan 6200 8inch wafers] *<br />
*[ Surfscan 6200 6inch wafers] *<br />
*[ Surfscan 6200 4inch wafers] *<br />
*[ Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SURFSCAN_6200_122123_small_substrates.pdf&diff=161815File:SURFSCAN 6200 122123 small substrates.pdf2024-02-03T00:55:39Z<p>Biljana: Biljana uploaded a new version of File:SURFSCAN 6200 122123 small substrates.pdf</p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SURFSCAN_6200_122123_for_4inch_wafers.pdf&diff=161814File:SURFSCAN 6200 122123 for 4inch wafers.pdf2024-02-03T00:55:26Z<p>Biljana: Biljana uploaded a new version of File:SURFSCAN 6200 122123 for 4inch wafers.pdf</p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SURFSCAN_6200_122123_for_8inch_wafers.pdf&diff=161813File:SURFSCAN 6200 122123 for 8inch wafers.pdf2024-02-03T00:55:08Z<p>Biljana: Biljana uploaded a new version of File:SURFSCAN 6200 122123 for 8inch wafers.pdf</p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:SURFSCAN_6200_122023_for_6inch_wafers.pdf&diff=161812File:SURFSCAN 6200 122023 for 6inch wafers.pdf2024-02-03T00:54:45Z<p>Biljana: Biljana uploaded a new version of File:SURFSCAN 6200 122023 for 6inch wafers.pdf</p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161795Surface Analysis (KLA/Tencor Surfscan)2024-01-24T17:45:30Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a2/SURFSCAN_6200_122123_for_8inch_wafers.pdf Surfscan 6200 8inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/1a/SURFSCAN_6200_122023_for_6inch_wafers.pdf Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/9/9f/SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Scanning Instructions]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Surface_Analysis_(KLA/Tencor_Surfscan)&diff=161794Surface Analysis (KLA/Tencor Surfscan)2024-01-24T17:41:59Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=KLA.jpg<br />
|type = Inspection, Test and Characterization<br />
|super= Biljana Stamenic<br />
|super2= Don Freeborn<br />
|location=Bay 5<br />
|description = Surface Analysis<br />
KLA/Tencor Surfscan<br />
|manufacturer = Tencor<br />
|materials =<br />
|toolid= <br />
}}<br />
==About==<br />
This system uses a laser-based scattering method to count size and distribution of particles (or other scattering defects) on a flat wafer surface. <br />
<br />
It can scan wafers in size from 4 to 8 inches. Piece-parts are more difficult but can be scanned with a custom recipe.<br />
<br />
4-inch wafers are the most standard size to measure. <br />
<br />
For measuring very low particle counts accurately, purchase "low particle count" (LPC) wafers from a Silicon wafer vendor, and keep the wafers in the case and clean at all times until use.<br />
<br />
==Documentation==<br />
<br />
===Operating Procedures===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a2/SURFSCAN_6200_122123_for_8inch_wafers.pdf Surfscan 6200 8inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/1/1a/SURFSCAN_6200_122023_for_6inch_wafers.pdf Surfscan 6200 6inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/9/9f/SURFSCAN_6200_122123_for_4inch_wafers.pdf Surfscan 6200 4inch wafers] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/a/a7/SURFSCAN_6200_122123_small_substrates.pdf Surfscan 6200 [Small samples, and 2inch and 3inch wafers]] *<br />
<br />
**''You must water-mount your small sample or wafer(2inch or 3 inch) to a 4-inch wafer.''<br />
*[[Wafer scanning process traveler|Wafer Particle Count - Process Traveler]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/29/Wafer_Particle_Count-Process_Traveler.pdf Wafer Particle Count - Process Traveler]<br />
**''This is the procedure Staff uses to calibrate particle counts on our deposition tools.''<br />
<br />
===Other Documentation===<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/9/96/Surfscan-Operation-Manual.pdf Operations Manual]<br />
**''For detailed measurement info, it is highly recommended that you read the manual.''<br />
<br />
*[[Glossary]]<br />
*[[Surfscan Errors and Workarounds|Common Errors & Workarounds]]<br />
<br />
==Examples==<br />
{| class="wikitable"<br />
|+A low-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan Low-Particle Example - G4.png|frameless|200x200px]]<br />
|[[File:Surfscan Low-Particle Example - G2.png|frameless|200x200px]]<br />
|}<br />
{| class="wikitable"<br />
|+A high-particle 4-inch wafer example:<br />
!Gain 4: Small Particles<br />
(0.160µm – 1.60µm)<br />
!Gain 2: Large Particles<br />
(1.60µm – 28.0µm)<br />
|-<br />
|[[File:Surfscan - 230113A7 Gain4 high particles.jpg|frameless|199x199px]]<br />
|[[File:Surfscan 230113A7G2 after low particles.jpg|frameless|195x195px]]<br />
|}</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Wafer_Particle_Count-Process_Traveler.pdf&diff=161793File:Wafer Particle Count-Process Traveler.pdf2024-01-24T17:39:59Z<p>Biljana: Biljana uploaded a new version of File:Wafer Particle Count-Process Traveler.pdf</p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Ion_Beam_Deposition_(Veeco_NEXUS)&diff=161779Ion Beam Deposition (Veeco NEXUS)2024-01-11T18:04:59Z<p>Biljana: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=IBD.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Bill Millerski<br />
|location=Bay 4<br />
|description = Ion Beam Deposition Tool<br />
|manufacturer = Veeco <br />
|materials = <br />
|toolid=14<br />
}} <br />
<br />
=About=<br />
This tool is designed for high quality, precise, reproducible deposition of dielectric films for optical quality films. Metallic material is ion bombarded from a target material and a reactive ion beam of oxygen and/or nitrogen is aimed at the surface, creating a metal-oxide or nitride on the sample. <br />
The system is fully computer controlled to facilitate multi-layer stack recipes for high reflectivity or low reflectivity coatings. <br />
The system is load locked and can handle wafers up to 6” in diameter as well as small pieces. Sample rotation and angling is used to facilitate material quality and allows for sidewall coverage on non-planar surfaces. <br />
Uniformity is better than 1.5% over 6" wafers and reproducibility is expected to be within one percent (with pre-dep calibration).<br />
The high-energy sputter deposition produces denser films than other techniques, improving optical damage threshold (and thus coating lifetime). This also causes the refractive indices to be slightly higher than comparable stoichiometric films deposited by other techniques.<br />
<br />
Four metallic targets can be installed (producing Oxides & Nitrides of each). Ta & Si are always available, the others are rotated out as users need them.<br />
<br />
The most common films for High-/Anti-Reflection (HR/AR) coatings are '''SiO<sub>2</sub>''' & '''Ta<sub>2</sub>O<sub>5</sub>''', both of which are extremely stable w/r/to refractive index. Users typically calibrate their dep. rates prior to critical deps. & multi-layer coatings.<br />
<br />
=Detailed Specifications=<br />
<br />
*Full programmable control through GUI, designed for multi-layer optical coatings<br />
*Xenon sputter-target bombardment<br />
*Nitrogen and/or Oxygen deposition assist source for metal oxides/nitrides<br />
*Available Sputter Targets: Ta, Si, Al, Ti (ITO target on-hand but not installed)<br />
*Standard Recipes: Ta<sub>2</sub>O<sub>5</sub>, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, TiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>.<br />
**Custom recipes: SiO<sub>x</sub>N<sub>y</sub>, AlN, TaN, TiN<br />
*Argon sample cleaning/pre-sputtering with low energy/etch rate<br />
*Base Pressure ≤ 3e-8 Torr<br />
*Accepts small pieces, up to 6” wafers accepted<br />
**Holders available for etched/cleaved facet coating<br />
*High quality, High Reflectivity DBR (>99.5%) mirrors demonstrated at UV-Vis & near-IR wavelengths<br />
*Wide-band Anti-Reflection coatings demonstrated in near-IR (~1550nm)<br />
<br />
=Documentation=<br />
<br />
*{{file|IBDoperationguide1.pdf|Operating Instructions Part 1}}<br />
*{{file|IBDoperationguide2.pdf|Operating Instructions Part 2}}<br />
<br />
==Recipes==<br />
<br />
*[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Sputtering Recipes: Ion Beam Deposition (Veeco NEXUS)]]<br />
**''Dep Rates, Refractive Indices etc. for various available dielectric coatings''<br />
*[[IBD: Calibrating Optical Thickness|Method for accurately calibrating multi-layer optical films]]: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc.<br />
* [https://wiki.nanofab.ucsb.edu/w/images/1/1c/IBD_SOP.pdf IBD Standard Operating procedure] *<br />
<br />
==Other documents==<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/1/18/IBD_Troubleshooting_Guide.pdf Troubleshootung Guide] *<br />
<br />
==Schematics/Examples==<br />
[[File:IBD Schematic.jpg|alt=Illustration showing wafer, assist beam and sputter/depo beam|none|thumb|Top-Down Schematic of the Ion Beam Deposition system, where (1) is the substrate/wafer, (2) is the Depo/Sputter ion beam, (3) is the variable sputter target (either Si, Ta, Al, or Ti), and (4) is the Assist Ion Beam.]]<br />
<br /></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Ion_Beam_Deposition_(Veeco_NEXUS)&diff=161778Ion Beam Deposition (Veeco NEXUS)2024-01-11T18:03:19Z<p>Biljana: /* Documentation */</p>
<hr />
<div>{{tool2|{{PAGENAME}}<br />
|picture=IBD.jpg<br />
|type = Vacuum Deposition<br />
|super= Michael Barreraz<br />
|super2= Bill Millerski<br />
|location=Bay 4<br />
|description = Ion Beam Deposition Tool<br />
|manufacturer = Veeco <br />
|materials = <br />
|toolid=14<br />
}} <br />
<br />
=About=<br />
This tool is designed for high quality, precise, reproducible deposition of dielectric films for optical quality films. Metallic material is ion bombarded from a target material and a reactive ion beam of oxygen and/or nitrogen is aimed at the surface, creating a metal-oxide or nitride on the sample. <br />
The system is fully computer controlled to facilitate multi-layer stack recipes for high reflectivity or low reflectivity coatings. <br />
The system is load locked and can handle wafers up to 6” in diameter as well as small pieces. Sample rotation and angling is used to facilitate material quality and allows for sidewall coverage on non-planar surfaces. <br />
Uniformity is better than 1.5% over 6" wafers and reproducibility is expected to be within one percent (with pre-dep calibration).<br />
The high-energy sputter deposition produces denser films than other techniques, improving optical damage threshold (and thus coating lifetime). This also causes the refractive indices to be slightly higher than comparable stoichiometric films deposited by other techniques.<br />
<br />
Four metallic targets can be installed (producing Oxides & Nitrides of each). Ta & Si are always available, the others are rotated out as users need them.<br />
<br />
The most common films for High-/Anti-Reflection (HR/AR) coatings are '''SiO<sub>2</sub>''' & '''Ta<sub>2</sub>O<sub>5</sub>''', both of which are extremely stable w/r/to refractive index. Users typically calibrate their dep. rates prior to critical deps. & multi-layer coatings.<br />
<br />
=Detailed Specifications=<br />
<br />
*Full programmable control through GUI, designed for multi-layer optical coatings<br />
*Xenon sputter-target bombardment<br />
*Nitrogen and/or Oxygen deposition assist source for metal oxides/nitrides<br />
*Available Sputter Targets: Ta, Si, Al, Ti (ITO target on-hand but not installed)<br />
*Standard Recipes: Ta<sub>2</sub>O<sub>5</sub>, SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, TiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>.<br />
**Custom recipes: SiO<sub>x</sub>N<sub>y</sub>, AlN, TaN, TiN<br />
*Argon sample cleaning/pre-sputtering with low energy/etch rate<br />
*Base Pressure ≤ 3e-8 Torr<br />
*Accepts small pieces, up to 6” wafers accepted<br />
**Holders available for etched/cleaved facet coating<br />
*High quality, High Reflectivity DBR (>99.5%) mirrors demonstrated at UV-Vis & near-IR wavelengths<br />
*Wide-band Anti-Reflection coatings demonstrated in near-IR (~1550nm)<br />
<br />
=Documentation=<br />
<br />
*{{file|IBDoperationguide1.pdf|Operating Instructions Part 1}}<br />
*{{file|IBDoperationguide2.pdf|Operating Instructions Part 2}}<br />
<br />
==Recipes==<br />
<br />
*[[Sputtering_Recipes#Ion_Beam_Deposition_.28Veeco_NEXUS.29|Sputtering Recipes: Ion Beam Deposition (Veeco NEXUS)]]<br />
**''Dep Rates, Refractive Indices etc. for various available dielectric coatings''<br />
*[[IBD: Calibrating Optical Thickness|Method for accurately calibrating multi-layer optical films]]: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc.<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/1/18/IBD_Troubleshooting_Guide.pdf Troubleshootung Guide] *<br />
<br />
==Schematics/Examples==<br />
[[File:IBD Schematic.jpg|alt=Illustration showing wafer, assist beam and sputter/depo beam|none|thumb|Top-Down Schematic of the Ion Beam Deposition system, where (1) is the substrate/wafer, (2) is the Depo/Sputter ion beam, (3) is the variable sputter target (either Si, Ta, Al, or Ti), and (4) is the Assist Ion Beam.]]<br />
<br /></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:IBD_Troubleshooting_Guide.pdf&diff=161777File:IBD Troubleshooting Guide.pdf2024-01-11T18:02:21Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:IBD_SOP.pdf&diff=161776File:IBD SOP.pdf2024-01-11T18:02:04Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:IBD_SOP.docx&diff=161775File:IBD SOP.docx2024-01-11T17:57:52Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161770Stepper 2 (AutoStep 200)2024-01-09T22:27:12Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/3/39/Focus_and_exposure_optimization-_Autostep200-II.pdf Optimizing the Process] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Programming a Job] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/2e/Autostep_200_Stepper_manual_focus.pdf Manual Focus] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual (old version)] *<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Autostep_200_Stepper_manual_focus.pdf&diff=161769File:Autostep 200 Stepper manual focus.pdf2024-01-09T22:26:08Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161767Stepper 2 (AutoStep 200)2024-01-08T23:52:10Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/3/39/Focus_and_exposure_optimization-_Autostep200-II.pdf Optimizing the Process] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Programming a Job] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual (old version)] *<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161766Stepper 2 (AutoStep 200)2024-01-08T23:51:17Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/3/39/Focus_and_exposure_optimization-_Autostep200-II.pdf Optimizing the Process] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual (old version)] *<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161765Stepper 2 (AutoStep 200)2024-01-08T23:47:43Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/9/92/General_information_about_AUTOSTEP_200.pdf General information about the Autostep 200] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/3/39/Focus_and_exposure_optimization-_Autostep200-II.pdf Optimizing the Process] *<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual (old version)] *<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Focus_and_exposure_optimization-_Autostep200-II.pdf&diff=161764File:Focus and exposure optimization- Autostep200-II.pdf2024-01-08T23:46:03Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161763Stepper 2 (AutoStep 200)2024-01-08T23:35:28Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/9/92/General_information_about_AUTOSTEP_200.pdf General information about the Autostep 200] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual (old version)] *<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:General_information_about_AUTOSTEP_200.pdf&diff=161762File:General information about AUTOSTEP 200.pdf2024-01-08T23:34:45Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161761Stepper 2 (AutoStep 200)2024-01-08T23:34:22Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
*[ <br />
*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual (old version)] *<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161760Stepper 2 (AutoStep 200)2024-01-08T23:33:07Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
*[https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual (old version)] *<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161759Stepper 2 (AutoStep 200)2024-01-08T23:32:15Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual(old version)] *<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161758Stepper 2 (AutoStep 200)2024-01-08T23:31:45Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
<br />
*[https://wiki.nanofab.ucsb.edu/w/images/5/54/Autostep200_Training_Old_Training_Manual.pdf Training Manual(old version)] *<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161757Stepper 2 (AutoStep 200)2024-01-08T23:30:17Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[https://wiki.nanofab.ucsb.edu/w/images/e/e1/AUTOSTEP_200_User_Accessible_Commands_010524.pdf User Accessible Commands] *<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161756Stepper 2 (AutoStep 200)2024-01-08T23:28:50Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
<br />
<br />
*[[Autostep 200 User Accessible Commands]]<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161755Stepper 2 (AutoStep 200)2024-01-08T23:28:11Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[[Autostep 200 User Accessible Commands]]<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161754Stepper 2 (AutoStep 200)2024-01-08T23:27:15Z<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
<br />
<br />
~~ Work in progress<br />
<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[[Autostep 200 User Accessible Commands]]<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161753Stepper 2 (AutoStep 200)2024-01-08T23:27:02Z<p>Biljana: /* Recipes */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Recipes > '''Photolithography Recipes''']<br />
<br />
* [https://wiki.nanofab.ucsb.edu/wiki/Stepper_Recipes#Stepper_2_.28AutoStep_200.29 Photolitography Recipes]*<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
<br />
<br />
~~ Work in progress<br />
<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[[Autostep 200 User Accessible Commands]]<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)_Operating_Procedures&diff=161752Stepper 2 (AutoStep 200) Operating Procedures2024-01-08T23:24:25Z<p>Biljana: /* Other Useful links for this system: */ two alignments</p>
<hr />
<div>==Other Useful links for this system:==<br />
<br />
*[[Stepper 2 (Autostep 200) - Chuck Selection]] - Quick Summary<br />
*[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]] - Detailed Info on the same<br />
*[[Autostep 200 Mask Making Guidance|Stepper 2 (Autostep 200) - Mask Making Guidance]]<br />
<br />
== Two Alignments: ==<br />
<br />
=== <small>1) Wafer alignment to the system ''/'' <u>Global (Manual Operation Only</u>)</small> ===<br />
The keyboard alone is used in this part of the exposure sequence to align the wafer to the system. The sequence of operations you do will depend on whether or not you used standard alignment keys or not. If you placed the sample close to the position you did during the first exposure, you should see an alignment mark in the right side of the screen. If not, you will need to find this mark using the position joystick by following a spiraling outward from the initial position. Pressing “F” repeatedly on the keyboard will do this spiral finding for you automatically. The red arrows on the number keys indicate the direction of movement for each keystroke. There are also + and -theta (angle) keys for rotation. Inc and Dec are used for microscope focus. The enter key on the numeric keypad changes from fast to slow movement. To change the joystick speed hit O on the main keyboard. Once the alignment mark is found follow one of the following procedures. Most of the time we use '''Non-Standard Alignment keys''':<br />
<br />
'''Standard Alignment Keys:'''<br />
<br />
#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed with the Fast/Slow key).<br />
#Align the right mark using the numeric keys labeled with arrows.<br />
#Use the Theta keys to rotate the left image into position. Positive Theta = clockwise rotation of chuck. If you run out of theta alignment, you will need to adjust your sample on the chuck.<br />
#The left image(left side of monitor) is used for theta only. The right image(right side of monitor) is used for x, and y alignment. Use the right image (right side of monitor) to do your best alignment. This step is important.<br />
#Repeat process until satisfied with the alignment. You can obtain better than 0.2 um alignment consistently if you are careful.<br />
<br />
'''Non-Standard Alignment Keys:'''<br />
<br />
#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed).<br />
#Align the right mark using the numeric keys labeled with arrows.<br />
#Press "A" on the main keyboard to toggle to the left alignment mark.<br />
#Use the Theta keys to rotate the left image into position. [Positive Theta= CW, Negative Theta=CCW rotation of chuck]<br />
#If you run out of theta alignment, you will need to adjust your sample on the chuck.<br />
#The left image(left side of monitor) is used for theta only. The right image(right side of monitor) is used for x, and y alignment. Use the right image (right side of monitor) to do your best alignment. This step is important.<br />
#Press "A" again to move to the right alignment mark<br />
#Again adjust the right alignment mark<br />
#Repeat process until satisfied with the alignment.<br />
#Once alignment is finished, you have two option for pieces (quarters): BR orientation, and BL orientation.<br />
#'''BR orientation''' - make sure you are on the right alignment mark before pressing "EXP", '''BL orientation''' - make sure you are on the left alignment mark before pressing "EXP". In both cases do your best alignment, but verify final alignment looking at the right image (right side of monitor).<br />
#After global alignment, press EXP on small keyboard and the job will be executed.<br />
#Remove the sample from the stage when done.<br />
#Develop resist and inspect in microscope for alignment.<br />
#Computer may ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting.<br />
<br />
=== <small>2) '''Wafer Alignment to mask ''/'' <u>Local Alignment (DFAS)</u>''' :</small> ===<br />
The best way to use this is to use a mapping routine followed by a shoot using the corrections given by the map. A mapping routine should be set-up in your mapping pass. Usually we do not map all dies, just selected ones. You could selected in each row few dies. The mapping pass should have a name different then any other pass. It could be named '''mapxx''' or some other name (for example: '''local'''). Make sure you specify '''die x die''' is to be used and that you have the correct key offsets for the global and local alignment marks. The command you will use is: <br />
<br />
* '''MAP jobname\mapxx, passname'''<br />
<br />
#Proceed as normal. Find a global alignment mark and do your best alignment. The first pass (mapxx) is the mapping pass. The system will do mapping, using dies that are selected in mapping pass. It will look for DFAS alignment mark in each die, and make corrections. When asked to make corrections, say yes. After corrections are applied, the exposure job will be performed shooting the pass named " passname". Follow instructions on screen when using this function.<br />
#Remove the sample from the stage when done. (If Match was enabled, you will have to wait until the match is done again. It will do this before asking you for the next wafer). Develop resist and inspect in microscope for alignment (if needed)<br />
#Computer will ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting by placing it on the chuck and hitting MANUAL.</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)_Operating_Procedures&diff=161751Stepper 2 (AutoStep 200) Operating Procedures2024-01-08T23:17:26Z<p>Biljana: /* Other Useful links for this system: */</p>
<hr />
<div>==Other Useful links for this system:==<br />
<br />
*[[Stepper 2 (Autostep 200) - Chuck Selection]] - Quick Summary<br />
*[[Stepper 2 (Autostep 200) - Table of Chucks, Shims, Target Thicknesses]] - Detailed Info on the same<br />
*[[Autostep 200 Mask Making Guidance|Stepper 2 (Autostep 200) - Mask Making Guidance]]<br />
<br />
*'''Two Alignments '''<br />
<br />
*'''WAFER ALIGNMENT TO SYSTEM ''/ <u>Global (Manual Operation Only</u>)'''''<br />
<br />
The keyboard alone is used in this part of the exposure sequence to align the wafer to the system. The sequence of operations you do will depend on whether or not you used standard alignment keys or not. If you placed the sample close to the position you did during the first exposure, you should see an alignment mark in the right side of the screen. If not, you will need to find this mark using the position joystick by following a spiraling outward from the initial position. Pressing “F” repeatedly on the keyboard will do this spiral finding for you automatically. The red arrows on the number keys indicate the direction of movement for each keystroke. There are also + and -theta (angle) keys for rotation. Inc and Dec are used for microscope focus. The enter key on the numeric keypad changes from fast to slow movement. To change the joystick speed hit O on the main keyboard. Once the alignment mark is found follow one of the following procedures. Most of the time we use '''Non-Standard Alignment keys''':<br />
<br />
'''''Standard Alignment Keys:'''''<br />
<br />
#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed with the Fast/Slow key).<br />
#Align the right mark using the numeric keys labeled with arrows.<br />
#Use the Theta keys to rotate the left image into position. Positive Theta = clockwise rotation of chuck. If you run out of theta alignment, you will need to adjust your sample on the chuck.<br />
#The left image(left side of monitor) is used for theta only. The right image(right side of monitor) is used for x, and y alignment. Use the right image (right side of monitor) to do your best alignment. This step is important.<br />
#Repeat process until satisfied with the alignment. You can obtain better than 0.2 um alignment consistently if you are careful.<br />
<br />
'''''Non-Standard Alignment Keys'':'''<br />
<br />
#Adjust the focus (Inc and Dec keys) to get a crisp image (you might have to change speed).<br />
#Align the right mark using the numeric keys labeled with arrows.<br />
#Press "A" on the main keyboard to toggle to the left alignment mark.<br />
#Use the Theta keys to rotate the left image into position. [Positive Theta= CW, Negative Theta=CCW rotation of chuck]<br />
#If you run out of theta alignment, you will need to adjust your sample on the chuck.<br />
#The left image(left side of monitor) is used for theta only. The right image(right side of monitor) is used for x, and y alignment. Use the right image (right side of monitor) to do your best alignment. This step is important.<br />
#Press "A" again to move to the right alignment mark<br />
#Again adjust the right alignment mark<br />
#Repeat process until satisfied with the alignment.<br />
#Once alignment is finished, you have two option for pieces (quarters): BR orientation, and BL orientation.<br />
#'''BR orientation''' - make sure you are on the right alignment mark before pressing "EXP", '''BL orientation''' - make sure you are on the left alignment mark before pressing "EXP". In both cases do your best alignment, but verify final alignment looking at the right image (right side of monitor).<br />
#After global alignment, press EXP on small keyboard and the job will be executed.<br />
#Remove the sample from the stage when done.<br />
#Develop resist and inspect in microscope for alignment.<br />
#Computer may ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting.<br />
<br />
*'''WAFER ALIGNMENT TO MASK ''/ <u>Local Alignment (DFAS)</u>''''' '':''<br />
<br />
The best way to use this is to use a mapping routine followed by a shoot using the corrections given by the map. A mapping routine should be set-up in your mapping pass. Usually we do not map all dies, just selected ones. You could selected in each row few dies. The mapping pass should have a name different then any other pass. It could be named '''mapxx''' or some other name (for example: '''local'''). Make sure you specify '''die x die''' is to be used and that you have the correct key offsets for the global and local alignment marks. The command you will use is: <br />
<br />
'''MAP jobname\mapxx, passname'''<br />
<br />
#Proceed as normal. Find a global alignment mark and do your best alignment. The first pass (mapxx) is the mapping pass. The system will do mapping, using dies that are selected in mapping pass. It will look for DFAS alignment mark in each die, and make corrections. When asked to make corrections, say yes. After corrections are applied, the exposure job will be performed shooting the pass named " passname". Follow instructions on screen when using this function.<br />
#Remove the sample from the stage when done. (If Match was enabled, you will have to wait until the match is done again. It will do this before asking you for the next wafer). Develop resist and inspect in microscope for alignment (if needed)<br />
#Computer will ask for next wafer. To escape out of this press CTRL C followed by A and the enter key to abort out of the loop. If you have another wafer with the same job\pass, you can do it now without aborting by placing it on the chuck and hitting MANUAL.</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:AUTOSTEP_200_User_Accessible_Commands_010524.pdf&diff=161750File:AUTOSTEP 200 User Accessible Commands 010524.pdf2024-01-08T22:53:55Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Autostep200_Training_Old_Training_Manual.pdf&diff=161749File:Autostep200 Training Old Training Manual.pdf2024-01-08T22:43:17Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161748Stepper 2 (AutoStep 200)2024-01-08T19:51:01Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Recipes > '''Photolithography Recipes''']<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
<br />
<br />
~~ Work in progress<br />
<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[[Autostep 200 User Accessible Commands]]<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161747Stepper 2 (AutoStep 200)2024-01-08T19:50:13Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Recipes > '''Photolithography Recipes''']<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Job Programming] *<br />
<br />
<br />
<br />
<br />
~~ Work in progress<br />
<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Autostep 200 User Accessible Commands]]<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(AutoStep_200)&diff=161746Stepper 2 (AutoStep 200)2024-01-08T19:49:05Z<p>Biljana: /* Operating Procedures */</p>
<hr />
<div>{{tool2_DJ|{{PAGENAME}}<br />
|picture=Stepper2.jpg<br />
|type = Lithography<br />
|super= Biljana Stamenic<br />
|super2 = Bill Millerski<br />
|location=Bay 6<br />
|description = GCA 200 I-Line Wafer Stepper<br />
|manufacturer = GCA<br />
|materials = <br />
|recipe = Lithography<br />
|toolid=38<br />
}} <br />
<br />
==About==<br />
<br />
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution (≥500nm) and/or critical alignment (≥150nm). <br />
<br />
The system has been modified to accept piece parts (down to smaller than 10mm x 10mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8 mm x 14.8 mm. <br />
<br />
The system has an Olympus 2145 (N.A. = 0.45) lens that reduces the mask image by 5x and gives an ultimate resolution of better than 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. The Autostep200 system has 3-point wafer leveling to improve focus uniformity across the field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. <br />
<br />
Using the "global", manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS "local" alignment system, alignment error better than 0.15 um is achieved. With the 1000 W Hg arc lamp, we get about 420 mW/cm² of i-line intensity at the wafer.<br />
<br />
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. <br />
<br />
==Detailed Specifications==<br />
<br />
*Lens: Olympus 2145: NA = 0.45; Depth of field = 1.2 um for 0.6 um process<br />
*Maximum die size: ~ 15 mm x 15 mm<br />
*Resolution: 400-450 nm for R&D; 700 nm over entire 15 mm x 15 mm field<br />
*Registration tolerance: 0.25 µm global alignment; Max 0.15 µm local alignment (with care, you can achieve < 0.10 µm registration)<br />
*Substrate size: ~ 10 x 10 mm up to 100 mm (150 mm possible, we don't provide the vacuum chuck for it).<br />
*Computer programmable, recipes saved on hard disk<br />
*Reticle alignment fiducials and global/local fiducials available - contact us for CAD files.<br />
<br />
==Process Information==<br />
<br />
===Photomask Info===<br />
<br />
*[[Autostep 200 Mask Making Guidance]] - ''information on designing and ordering your photomasks for this system.''<br />
<br />
===Recipes===<br />
<br />
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Recipes > '''Photolithography Recipes''']<br />
<br />
===Photoresists===<br />
<br />
*The laboratory contains a variety of i-line compatible photoresists. See the [https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Photolith. Recipes Page] for detailed processing info (bakes/spins/exposure does etc.). Basic photoresists include:<br />
**955CM-0.9 for 0.7-1.0 um thick positive processes.<br />
**AZ5214E for 1.0 um thick image reversal (negative) process.<br />
**SPR955CM-1.8 for 1.5-2.0 um thick positive processes.<br />
**SPR220-3 for 2.5-5 um thick positive process.<br />
**SPR220-7 for >5 um thick positive processes.<br />
**AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process.<br />
**Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.<br />
<br />
===CAD Files===<br />
<br />
*[[Media:GCA Stepper MaskPlate Master-DarkField 5x.gds|Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]]<br />
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''<br />
**''Insert your designs into the template as Instances scaled UP by 5x.''<br />
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark.gds|Local Alignment Mark CAD File (GDS)]]<br />
*[[Media:GCA Local Alignment Mark Dotted.gds|Local Alignment Mark CAD File: Dotted (GDS)]]<br />
**''This dotted version works for low-contrast layers (eg. mark etched into very thin ≤100nm layer).''<br />
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.<br />
<br />
==Service Provider==<br />
<br />
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.<br />
<br />
==Operating Procedures==<br />
<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/0/05/Running_the_JOB-_One_Page_Instructions.pdf Running the JOB - One Page Instructions] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/f/f3/Autostep_200_-_Standard_Operating_Procedure-2023.pdf Standard Operating Procedure] *<br />
* [https://wiki.nanofab.ucsb.edu/w/images/2/27/Autostep_200_-_Setting_up_the_Job.pdf Programming a Job] *<br />
<br />
<br />
<br />
<br />
~~ Work in progress<br />
<br />
*[[Stepper 2 (AutoStep 200) Operating Procedures|Two Alignments]]<br />
*[[Stepper 2 (Autostep 200) - Job Programming|Programming wafer pieces and wafers]]<br />
*[[Autostep 200 User Accessible Commands]]<br />
*[[Autostep 200 Troubleshooting and Recovery|Troubleshooting and Recovery]]<br />
*[[Autostep 200 Old training manual]] - ''older procedures for historical jobs''<br />
*[[Autostep 200 Mask Making Guidance|Mask Making Guidelines]] - ''for designing and ordering photomasks''<br />
<br />
==Staff Procedures==<br />
''These procedures are for Staff use - contact staff if you think you need to run these!''<br />
<br />
*[https://wiki.nanotech.ucsb.edu/w/images/5/5e/Autostep_200_Restart_SOP_June_2021.pdf Shutdown + Startup Procedure]</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(Autostep_200)_-_Piece_vs._Wafer_Programming_Differences&diff=161745Stepper 2 (Autostep 200) - Piece vs. Wafer Programming Differences2024-01-08T19:45:47Z<p>Biljana: /* 2. Second layer */</p>
<hr />
<div>In this section you can find instructions how to expose first/second layer on a full wafer and on the wafer piece using a single centered reticle.<br />
<br />
====<u>Exposing full wafers:</u>====<br />
<br />
=====First layer=====<br />
Follow instructions for job programming. Create the job with passes needed for exposing different layers on the wafer. Select the proper chuck, attach the shim if needed. Load the chuck with a wafer on the stage. Type on the keyboard EX or EXEC Job name\Pass name1. Wait for the stage to stop moving. There is no need for aligning. The pattern will be centered to the center of wafer. This is your first layer. Microscope inspect after developing to make sure exposure looks good.<br />
<br />
=====Second layer=====<br />
Select the proper chuck, attach the shim if needed, for your wafer. Load the chuck with a wafer on the stage. Edit your job and make sure information for the Job name\Pass name is correct. On the keyboard type command EX or EXEC Job name\Pass name2. Wait for the stage to stop moving. Start manual alignment. Find your right alignment mark on the right monitor, and align cross on the right objective to the right alignment mark. Press "A" and switch to the left objective. Align left objective to the left alignment mark. Repeat process until you are satisfied with alignment. You should see the same amount of the light between lines. Make sure your alignment looks good on the right objective. Press EXEC on the keyboard. Microscope inspect after developing to make sure second layer is aligned well to the first layer.<br />
<br />
====<u>Exposing wafer pieces:</u>====<br />
Exposing wafer pieces is more complicated than wafer substrates. The main reason for this is that wafer pieces are usually small, they are not as flat as wafers are. Resist on a wafer piece is not coated as uniformly as it is on the wafer. The first challenge for wafer pieces is getting the first layer at the right place. This requires some skills regarding loading and aligning the wafer piece, as well as entering correct parameters in the job (key offset, pass shift). Document bellow explains exposing a first layer on the wafer piece if using a single centered mask plate.<br />
<br />
=====1. First layer=====<br />
Please find detailed instructions how to expose the first layer on a wafer piece using a single centered mask plate. <br />
<br />
[https://wiki.nanofab.ucsb.edu/w/images/3/3d/Single_centered_mask-Piece_1st_litho_AUTOSTEP_200.pdf Single centered mask - Piece 1st lithography Autostep200] *<br />
<br />
=====2. Second layer=====<br />
Please find detailed instructions how to expose the second layer on a wafer piece substrate using two different mask plates:<br />
<br />
*Single centered mask plate (for wafer pieces with orientations BL (bottom left), and BR (bottom right):[https://wiki.nanofab.ucsb.edu/w/images/b/ba/Single_centered_mask-Piece_2nd_litho_AUTOSTEP_200.pdf Single centered plate Piece - 2nd Litho Autostep 200] *<br />
<br />
*Multi layered mask plate (for wafer pieces with either orientation ( BL or BR): [https://wiki.nanofab.ucsb.edu/w/images/d/de/4_Quads_mask_plate_Piece_-_2nd_litho_AUTOSTEP_200_%281%29.pdf Quads mask plate Piece - 2nd litho Autostep 200] *</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(Autostep_200)_-_Piece_vs._Wafer_Programming_Differences&diff=161744Stepper 2 (Autostep 200) - Piece vs. Wafer Programming Differences2024-01-08T19:44:28Z<p>Biljana: /* 2. Second layer */</p>
<hr />
<div>In this section you can find instructions how to expose first/second layer on a full wafer and on the wafer piece using a single centered reticle.<br />
<br />
====<u>Exposing full wafers:</u>====<br />
<br />
=====First layer=====<br />
Follow instructions for job programming. Create the job with passes needed for exposing different layers on the wafer. Select the proper chuck, attach the shim if needed. Load the chuck with a wafer on the stage. Type on the keyboard EX or EXEC Job name\Pass name1. Wait for the stage to stop moving. There is no need for aligning. The pattern will be centered to the center of wafer. This is your first layer. Microscope inspect after developing to make sure exposure looks good.<br />
<br />
=====Second layer=====<br />
Select the proper chuck, attach the shim if needed, for your wafer. Load the chuck with a wafer on the stage. Edit your job and make sure information for the Job name\Pass name is correct. On the keyboard type command EX or EXEC Job name\Pass name2. Wait for the stage to stop moving. Start manual alignment. Find your right alignment mark on the right monitor, and align cross on the right objective to the right alignment mark. Press "A" and switch to the left objective. Align left objective to the left alignment mark. Repeat process until you are satisfied with alignment. You should see the same amount of the light between lines. Make sure your alignment looks good on the right objective. Press EXEC on the keyboard. Microscope inspect after developing to make sure second layer is aligned well to the first layer.<br />
<br />
====<u>Exposing wafer pieces:</u>====<br />
Exposing wafer pieces is more complicated than wafer substrates. The main reason for this is that wafer pieces are usually small, they are not as flat as wafers are. Resist on a wafer piece is not coated as uniformly as it is on the wafer. The first challenge for wafer pieces is getting the first layer at the right place. This requires some skills regarding loading and aligning the wafer piece, as well as entering correct parameters in the job (key offset, pass shift). Document bellow explains exposing a first layer on the wafer piece if using a single centered mask plate.<br />
<br />
=====1. First layer=====<br />
Please find detailed instructions how to expose the first layer on a wafer piece using a single centered mask plate. <br />
<br />
[https://wiki.nanofab.ucsb.edu/w/images/3/3d/Single_centered_mask-Piece_1st_litho_AUTOSTEP_200.pdf Single centered mask - Piece 1st lithography Autostep200] *<br />
<br />
=====2. Second layer=====<br />
Please find detailed instructions how to expose the second layer on a wafer piece substrate using two different mask plates:<br />
<br />
*Single centered mask plate (for wafer pieces with orientations BL (bottom left), and BR (bottom right):[https://wiki.nanofab.ucsb.edu/w/images/b/ba/Single_centered_mask-Piece_2nd_litho_AUTOSTEP_200.pdf @nd Litho Autostep 200] *<br />
<br />
*Multi layered mask plate (for wafer pieces with either orientation ( BL or BR): [https://wiki.nanofab.ucsb.edu/w/images/d/de/4_Quads_mask_plate_Piece_-_2nd_litho_AUTOSTEP_200_%281%29.pdf Quads mask plate Piece - 2nd litho Autostep 200] *</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(Autostep_200)_-_Piece_vs._Wafer_Programming_Differences&diff=161743Stepper 2 (Autostep 200) - Piece vs. Wafer Programming Differences2024-01-08T19:41:19Z<p>Biljana: /* 2. Second layer */</p>
<hr />
<div>In this section you can find instructions how to expose first/second layer on a full wafer and on the wafer piece using a single centered reticle.<br />
<br />
====<u>Exposing full wafers:</u>====<br />
<br />
=====First layer=====<br />
Follow instructions for job programming. Create the job with passes needed for exposing different layers on the wafer. Select the proper chuck, attach the shim if needed. Load the chuck with a wafer on the stage. Type on the keyboard EX or EXEC Job name\Pass name1. Wait for the stage to stop moving. There is no need for aligning. The pattern will be centered to the center of wafer. This is your first layer. Microscope inspect after developing to make sure exposure looks good.<br />
<br />
=====Second layer=====<br />
Select the proper chuck, attach the shim if needed, for your wafer. Load the chuck with a wafer on the stage. Edit your job and make sure information for the Job name\Pass name is correct. On the keyboard type command EX or EXEC Job name\Pass name2. Wait for the stage to stop moving. Start manual alignment. Find your right alignment mark on the right monitor, and align cross on the right objective to the right alignment mark. Press "A" and switch to the left objective. Align left objective to the left alignment mark. Repeat process until you are satisfied with alignment. You should see the same amount of the light between lines. Make sure your alignment looks good on the right objective. Press EXEC on the keyboard. Microscope inspect after developing to make sure second layer is aligned well to the first layer.<br />
<br />
====<u>Exposing wafer pieces:</u>====<br />
Exposing wafer pieces is more complicated than wafer substrates. The main reason for this is that wafer pieces are usually small, they are not as flat as wafers are. Resist on a wafer piece is not coated as uniformly as it is on the wafer. The first challenge for wafer pieces is getting the first layer at the right place. This requires some skills regarding loading and aligning the wafer piece, as well as entering correct parameters in the job (key offset, pass shift). Document bellow explains exposing a first layer on the wafer piece if using a single centered mask plate.<br />
<br />
=====1. First layer=====<br />
Please find detailed instructions how to expose the first layer on a wafer piece using a single centered mask plate. <br />
<br />
[https://wiki.nanofab.ucsb.edu/w/images/3/3d/Single_centered_mask-Piece_1st_litho_AUTOSTEP_200.pdf Single centered mask - Piece 1st lithography Autostep200] *<br />
<br />
=====2. Second layer=====<br />
Please find detailed instructions how to expose the second layer on a wafer piece substrate using two different mask plates:<br />
<br />
* [https://wiki.nanofab.ucsb.edu/w/images/b/ba/Single_centered_mask-Piece_2nd_litho_AUTOSTEP_200.pdf @nd Litho Autostep 200] *<br />
<br />
*Multi layered mask plate (for wafer pieces with either orientation ( BL or BR): [https://wiki.nanofab.ucsb.edu/w/images/d/de/4_Quads_mask_plate_Piece_-_2nd_litho_AUTOSTEP_200_%281%29.pdf Quads mask plate Piece - 2nd litho Autostep 200] *</div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=File:Single_centered_mask-Piece_2nd_litho_AUTOSTEP_200.pdf&diff=161742File:Single centered mask-Piece 2nd litho AUTOSTEP 200.pdf2024-01-08T19:39:50Z<p>Biljana: </p>
<hr />
<div></div>Biljanahttps://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_2_(Autostep_200)_-_Piece_vs._Wafer_Programming_Differences&diff=161741Stepper 2 (Autostep 200) - Piece vs. Wafer Programming Differences2024-01-08T19:39:19Z<p>Biljana: /* 2. Second layer */</p>
<hr />
<div>In this section you can find instructions how to expose first/second layer on a full wafer and on the wafer piece using a single centered reticle.<br />
<br />
====<u>Exposing full wafers:</u>====<br />
<br />
=====First layer=====<br />
Follow instructions for job programming. Create the job with passes needed for exposing different layers on the wafer. Select the proper chuck, attach the shim if needed. Load the chuck with a wafer on the stage. Type on the keyboard EX or EXEC Job name\Pass name1. Wait for the stage to stop moving. There is no need for aligning. The pattern will be centered to the center of wafer. This is your first layer. Microscope inspect after developing to make sure exposure looks good.<br />
<br />
=====Second layer=====<br />
Select the proper chuck, attach the shim if needed, for your wafer. Load the chuck with a wafer on the stage. Edit your job and make sure information for the Job name\Pass name is correct. On the keyboard type command EX or EXEC Job name\Pass name2. Wait for the stage to stop moving. Start manual alignment. Find your right alignment mark on the right monitor, and align cross on the right objective to the right alignment mark. Press "A" and switch to the left objective. Align left objective to the left alignment mark. Repeat process until you are satisfied with alignment. You should see the same amount of the light between lines. Make sure your alignment looks good on the right objective. Press EXEC on the keyboard. Microscope inspect after developing to make sure second layer is aligned well to the first layer.<br />
<br />
====<u>Exposing wafer pieces:</u>====<br />
Exposing wafer pieces is more complicated than wafer substrates. The main reason for this is that wafer pieces are usually small, they are not as flat as wafers are. Resist on a wafer piece is not coated as uniformly as it is on the wafer. The first challenge for wafer pieces is getting the first layer at the right place. This requires some skills regarding loading and aligning the wafer piece, as well as entering correct parameters in the job (key offset, pass shift). Document bellow explains exposing a first layer on the wafer piece if using a single centered mask plate.<br />
<br />
=====1. First layer=====<br />
Please find detailed instructions how to expose the first layer on a wafer piece using a single centered mask plate. <br />
<br />
[https://wiki.nanofab.ucsb.edu/w/images/3/3d/Single_centered_mask-Piece_1st_litho_AUTOSTEP_200.pdf Single centered mask - Piece 1st lithography Autostep200] *<br />
<br />
=====2. Second layer=====<br />
Please find detailed instructions how to expose the second layer on a wafer piece substrate using two different mask plates:<br />
<br />
<br />
<br />
*Multi layered mask plate (for wafer pieces with either orientation ( BL or BR): [https://wiki.nanofab.ucsb.edu/w/images/d/de/4_Quads_mask_plate_Piece_-_2nd_litho_AUTOSTEP_200_%281%29.pdf Quads mask plate Piece - 2nd litho Autostep 200] *</div>Biljana